Silicon Molecular Beam Epitaxy, Volume 10A

1st Edition

Editors: E. Kasper E.H.C. Parker
Hardcover ISBN: 9780444886200
eBook ISBN: 9780080983684
Imprint: North Holland
Published Date: 1st March 1990
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Table of Contents

SiGe Superlattices

Si-Ge Strained Layer Superlattices

Optical Properties of Strained Ge-Si Superlattices Grown On (001)Ge

Growth and Characterization of Si-Ge Atomic Layer Superlattices

Study of Hole Transport through Minibands in Symmetrically Strained GexSi1-x/Si Superlattices

Electronic Structure of Ultrathin SinGen Strained Superlattices: The Possibility of Direct Band Gaps

Optical Properties of Perfect and Imperfect Si-Ge Superlattices

Investigation of SimGen Strained Monolayer Superlattices by RHEED, Raman, and X-Ray Techniques

Confined Phonons in Strained Short-Period (001)Si/Ge Superlattices

Calculation of Energies and Raman Intensities of Confined Phonons in Si-Ge Strained Layer Superlattices

Relaxation of Coherent Strain in Si1-xGex/Si Superlattices and Alloys

Strain Adjustment in Ultra Thin Si/Ge Superlattices

Improvement of Structural Properties of Si/Ge Superlattices

Phonons in Si/Ge Superlattices: Theory and Experiment

A Photoluminescence Study of Si/Ge Superlattices

SiGe: Microstructure

Strain Relaxation Phenomena in GexSi1-x/Si Strained Structures

Misfit Dislocations in Annealed Si1-xGex/Si Heterostructures

Heterogeneous Nucleation Sources in Molecular Beam Epitaxy-Grown GexSi1-x/Si Strained Layer Superlattices

Reduction of Dislocation Density of MBE-Grown Si1-xGex Layers on (100) Si by Rapid Thermal Annealing

Chemical Ordering and Boundary Structure in Crystalline Si-Ge Superlattices

The Structural Stability of Uncapped versus Buried Si1-xGex Strained Layers through High Temperature Processing

Germanium Diffusion and Strain Relaxation in Si/Si1-xGex/Si Structures

Ge Segregation during Molecular Beam Epitaxial Growth of Si1-xGex/Si La


This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.

A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(


© North Holland 1989
North Holland
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About the Editors

E. Kasper Editor

Affiliations and Expertise

Institut für Halbleitertechnik, University of Stuttgart, Gemany

E.H.C. Parker Editor

Affiliations and Expertise

Coventry, U.K.