Silicon Molecular Beam Epitaxy - 1st Edition - ISBN: 9780444886200, 9780080983684

Silicon Molecular Beam Epitaxy, Volume 10A

1st Edition

Editors: Erwin Kasper E.H.C. Parker
eBook ISBN: 9780080983684
Imprint: North Holland
Published Date: 1st March 1990
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Table of Contents

SiGe Superlattices

Si-Ge Strained Layer Superlattices

Optical Properties of Strained Ge-Si Superlattices Grown On (001)Ge

Growth and Characterization of Si-Ge Atomic Layer Superlattices

Study of Hole Transport through Minibands in Symmetrically Strained GexSi1-x/Si Superlattices

Electronic Structure of Ultrathin SinGen Strained Superlattices: The Possibility of Direct Band Gaps

Optical Properties of Perfect and Imperfect Si-Ge Superlattices

Investigation of SimGen Strained Monolayer Superlattices by RHEED, Raman, and X-Ray Techniques

Confined Phonons in Strained Short-Period (001)Si/Ge Superlattices

Calculation of Energies and Raman Intensities of Confined Phonons in Si-Ge Strained Layer Superlattices

Relaxation of Coherent Strain in Si1-xGex/Si Superlattices and Alloys

Strain Adjustment in Ultra Thin Si/Ge Superlattices

Improvement of Structural Properties of Si/Ge Superlattices

Phonons in Si/Ge Superlattices: Theory and Experiment

A Photoluminescence Study of Si/Ge Superlattices

SiGe: Microstructure

Strain Relaxation Phenomena in GexSi1-x/Si Strained Structures

Misfit Dislocations in Annealed Si1-xGex/Si Heterostructures

Heterogeneous Nucleation Sources in Molecular Beam Epitaxy-Grown GexSi1-x/Si Strained Layer Superlattices

Reduction of Dislocation Density of MBE-Grown Si1-xGex Layers on (100) Si by Rapid Thermal Annealing

Chemical Ordering and Boundary Structure in Crystalline Si-Ge Superlattices

The Structural Stability of Uncapped versus Buried Si1-xGex Strained Layers through High Temperature Processing

Germanium Diffusion and Strain Relaxation in Si/Si1-xGex/Si Structures

Ge Segregation during Molecular Beam Epitaxial Growth of Si1-xGex/Si Layers

Silicon Growth

Hydrogen-Terminated Silicon Substrates for Low-Temperature Molecular Beam Epitaxy

The Initial Stages of Growth of Silicon on Si(111) by Slow Positron Annihilation Low-Energy Electron Diffraction

Interaction of Structure with Kinetics in Si(001) Homoepitaxy

Surface Step Structure of a Lens-Shaped Si(001) Vicinal Substrate

Photoluminescence Characterization of Molecular Beam Epitaxial Silicon

Rippled Surface Topography Observed on Silicon Molecular Beam Epitaxial and Vapour Phase Epitaxial Layers

Reflection High Energy Electron Diffraction and Scanning Tunnelling Microscopy Study of Single-Domain Growth during Silicon Molecular Beam Epitaxy on Si(001)

The 698 meV Optical Band in MBE Silicon

Silicon Growth/Doping

Dopant Incorporation Kinetics and Abrupt Profiles during Silicon Molecular Beam Epitaxy

The Measurement of Surface Boron on Silicon Wafers Annealed in Vacuum and Gas Ambients

Low Temperature Kinetics of Si(100) MBE Growth

Influence of Substrate Orientation on Surface Segregation Process in Silicon-MBE

Growth and Transport Properties of SimSb1 Superlattices

Electrical Characterization and Subband Structures in Antimony δ-Doped Molecular Beam Epitaxy-Silicon Layers

Equipment of a 3-Inch Silicon Molecular Beam Epitaxial System with Scanning Tunnelling Microscopy

A Monte Carlo Study of the Silicon Film Growth from Molecular Beams

Electrical Properties of Gallium- and Antimony-Doped Silicon Layers, Grown by Solid Phase Epitaxy in a Molecular Beam Epitaxial Growth Chamber

Structure of Amorphous Silicon Layers Deposited Under Ultrahigh Vacuum at Different Substrate Temperatures

Author Index

Subject Index


This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.

A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.


© North Holland 1989
North Holland
eBook ISBN:

About the Editors

Erwin Kasper Editor

Erwin Kasper studied physics at the Universities of Münster and Tübingen (Germany), where he obtained his PhD in 1965 and the habilitation to teach physics in 1969. After scientific spells in the University of Tucson, Arizona (1966) and in Münich (1970), he resumed his research and teaching in the Institute of Applied Physics, University of Tübingen, where he was later appointed professor. He lectured on general physics and especially on electron optics. The subject of his research was theoretical electron optics and related numerical methods on which he published numerous papers. After his retirement in 1997, he published a book on numerical field calculation (2001).

Affiliations and Expertise

Institut fuer Angewandte Physik der Universitaet, Tuebingen, Germany

E.H.C. Parker Editor

Affiliations and Expertise

Coventry, U.K.