Silicon Integrated Circuits

Silicon Integrated Circuits

Advances in Materials and Device Research

1st Edition - April 28, 1981

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  • Editor: Dawon Kahng
  • eBook ISBN: 9781483214771

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Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.

Table of Contents

  • List of Contributors


    Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon

    I. Introduction

    II. Theory of Group III and V Impurity Diffusion in Silicon

    III. Thermal Oxidation of Silicon

    IV. Impurity Diffusion and Defect Growth in Oxidizing Ambients


    Silicon Power Field Controlled Devices and Integrated Circuits

    I. Introduction

    II. Silicon Material Limitations

    III. Breakdown Phenomena

    IV. Junction Gate Field Effect Transistors

    V. MOS Gate Field Effect Transistor

    VI. Field Controlled Diodes

    VII. Power Integrated Circuits

    VIII. Recent Developments


    Author Index

    Subject Index

Product details

  • No. of pages: 310
  • Language: English
  • Copyright: © Academic Press 1981
  • Published: April 28, 1981
  • Imprint: Academic Press
  • eBook ISBN: 9781483214771

About the Editor

Dawon Kahng

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