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Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
List of Contributors
Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon
II. Theory of Group III and V Impurity Diffusion in Silicon
III. Thermal Oxidation of Silicon
IV. Impurity Diffusion and Defect Growth in Oxidizing Ambients
Silicon Power Field Controlled Devices and Integrated Circuits
II. Silicon Material Limitations
III. Breakdown Phenomena
IV. Junction Gate Field Effect Transistors
V. MOS Gate Field Effect Transistor
VI. Field Controlled Diodes
VII. Power Integrated Circuits
VIII. Recent Developments
- No. of pages:
- © Academic Press 1981
- 28th April 1981
- Academic Press
- eBook ISBN:
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