Silicon Integrated Circuits - 1st Edition - ISBN: 9780120029549, 9781483273112

Silicon Integrated Circuits

1st Edition

Editors: Dawon Kahng
eBook ISBN: 9781483273112
Imprint: Academic Press
Published Date: 1st January 1981
Page Count: 428
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Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits.

Table of Contents

List of Contributors Preface Physics of the MOS Transistor I. Introduction II. The MOS Capacitor III. Flatband Voltage IV. The OSFET V. Nonuniform Doping VI. Short Channel Effects VII. MOSFET Structures VIII. Conclusion Appendix References Nonvolatile Memories I. Introduction II. MIOS Devices III. Floating Gate Devices IV. Technology for Nonvolatile Semiconductor Memories V. Problems Relating to Testing and Reliability References The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits I. Introduction II. Sapphire Substrates III. Preparation and Properties of Silicon Films on Sapphire (SOS) IV. SOS Process and Device Technology V. SOS Integrated Circuits and Systems VI. Conclusions References Author Index Subject Index


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© Academic Press 1981
Academic Press
eBook ISBN:

About the Editor

Dawon Kahng

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