Silicon-Germanium Strained Layers and Heterostructures, Volume 74

1st Edition

Semi-conductor and semi-metals series

Authors: M. Willander Suresh Jain
Hardcover ISBN: 9780127521831
eBook ISBN: 9780080541020
Imprint: Academic Press
Published Date: 2nd October 2003
Page Count: 322
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Table of Contents

Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.


The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.

Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

Key Features

  • Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
  • The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
  • Appropriate for students and senior researchers


Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors


No. of pages:
© Academic Press 2003
Academic Press
eBook ISBN:
Hardcover ISBN:

About the Authors

M. Willander Author

Affiliations and Expertise

Göteborg University and Linköping University

Suresh Jain Author

Affiliations and Expertise

National Physical Laboratory, New Delhi, India