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Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.
Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
- Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
- The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
- Appropriate for students and senior researchers
Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors
- No. of pages:
- © Academic Press 2003
- 2nd October 2003
- Academic Press
- Hardcover ISBN:
- eBook ISBN:
Göteborg University and Linköping University
National Physical Laboratory, New Delhi, India
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