Silicon-Germanium Strained Layers and Heterostructures
Semi-conductor and semi-metals series
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The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
Key Features
* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers
Readership
Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors
Table of Contents
- Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.
Product details
- No. of pages: 322
- Language: English
- Copyright: © Academic Press 2003
- Published: July 1, 2003
- Imprint: Academic Press
- eBook ISBN: 9780080541020
About the Authors
M. Willander
Affiliations and Expertise
Göteborg University and Linköping University
Suresh Jain
Affiliations and Expertise
National Physical Laboratory, New Delhi, India
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