Silicon-Germanium Strained Layers and Heterostructures

Silicon-Germanium Strained Layers and Heterostructures

Semi-conductor and semi-metals series

1st Edition - July 1, 2003

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  • Authors: M. Willander, Suresh Jain
  • eBook ISBN: 9780080541020

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The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

Key Features

* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers


Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors

Table of Contents

  • Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.

Product details

  • No. of pages: 322
  • Language: English
  • Copyright: © Academic Press 2003
  • Published: July 1, 2003
  • Imprint: Academic Press
  • eBook ISBN: 9780080541020

About the Authors

M. Willander

Affiliations and Expertise

Göteborg University and Linköping University

Suresh Jain

Affiliations and Expertise

National Physical Laboratory, New Delhi, India

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