Description

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.

The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.

With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.

Key Features

  • Reviews the materials science of nanostructures and their properties and applications in different electronic devices
  • Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys
  • Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Readership

Researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures

Table of Contents

Contributor contact details

Preface

Part I: Introduction

Chapter 1: Structural properties of silicon–germanium (SiGe) nanostructures

Abstract:

1.1 Introduction

1.2 Crystal structure

1.3 Lattice parameters

1.4 Phase diagram

1.5 Critical thickness

1.6 Structural characterization by X-ray diffraction

1.7 Future trends

1.8 Acknowledgement

Chapter 2: Electronic band structures of silicon–germanium (SiGe) alloys

Abstract:

2.1 Band structures

2.2 Strain effects

2.3 Effective mass

2.4 Conclusion

Part II: Formation of nanostructures

Chapter 3: Understanding crystal growth mechanisms in silicon–germanium (SiGe) nanostructures

Abstract:

3.1 Introduction

3.2 Thermodynamics of crystal growth

3.3 Fundamental growth processes

3.4 Kinetics of epitaxial growth

3.5 Heteroepitaxy

Chapter 4: Types of silicon–germanium (SiGe) bulk crystal growth methods and their applications

Abstract:

4.1 Introduction

4.2 Growth methods

4.3 Application of silicon–germanium (SiGe) bulk crystal to heteroepitaxy

4.4 Conclusion

Chapter 5: Silicon–germanium (SiGe) crystal growth using molecular beam epitaxy

Abstract:

5.1 Introduction

5.2 Techniques

5.3 Nanostructure formation by molecular bean epitaxy (MBE)

5.4 Future trends

Chapter 6: Silicon–germanium (SiGe) crystal growth using chemical vapor deposition

Abstract:

6.1 Introduction

6.2 Epitaxial growth techniques – chemical vapor deposition (CVD) (ultra high vacuum CVD (UHVCVD), low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), plasma enhanced CVD (PECVD))

6.3 Silicon–germanium (SiGe) heteroepitaxy by chemical vapor deposition (CVD)

6.4 Doping of silicon–germanium (SiGe)

6.5 Conclusion and

Details

No. of pages:
656
Language:
English
Copyright:
© 2011
Published:
Imprint:
Woodhead Publishing
Print ISBN:
9781845696894
Electronic ISBN:
9780857091420

About the editors

Y. Shiraki

Yasuhiro Shiraki is X at Tokyo City University, Japan.

N Usami

Noritaka Usami is an Associate Professor at the Institute for Materials Research, Tohoku University, Japan.

Reviews

This book represents a considerable collaborative state of the art review of SiGe current developments and nanostructures in electronic devices., Materials World