Silicon Carbide — 1968

Silicon Carbide — 1968

Proceedings of the International Conference on Silicon Carbide, University Park, Pennsylvania, October 20-23, 1968

1st Edition - January 1, 1969

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  • Editors: H. K. Henisch, R. Roy
  • eBook ISBN: 9781483152615

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Description

Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.

Table of Contents


  • Papers Presented at the International Conference on Silicon Carbide — 1968

    Perspectives on Silicon Carbide

    Problems in Silicon Carbide Device Development

    Thermal Properties of ß-Silicon Carbide from 20 to 2000°C

    The Influence of Impurities on the Growth of Silicon Carbide Crystals Grown by Gas-Phase Reactions

    The Influence of Impurities on the Growth of Silicon Carbide Crystals by Recrystallization

    Some Observations on Silicon Carbide Single Crystal Growth

    Principles of Solution and Traveling Solvent Growth of Silicon Carbide

    Growth of Silicon Carbide from Solution

    The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method

    Beta Silicon Carbide

    Heteroepitaxy of Beta Silicon Carbide Employing Liquid Metals

    Some Aspects of Disorder in Silicon Carbide

    Dependence of Physical Properties on Polytype Structure

    Optical Properties of Polytypes of SiC: Interband Absorption, and Luminescence of Nitrogen-Exciton Complexes

    Phase Stability of Silicon Carbide in the Ternary System Si-C-N

    Electronic Structure and Optical Spectrum of Silicon Carbide

    Fabrication of Silicon Carbide Light Emitting Diodes

    The Fabrication of SiC Electroluminescent Displays

    The Etching of Silicon Carbide

    Electrical Properties of SiC Devices

    Photoluminescence and Electroluminescence in Alpha Silicon Carbide

    Luminescence of Silicon Carbide with Different Impurities

    The Temperature Dependence of Photoelectric Effects in Silicon Carbide

    The E.S.R. Properties of Electron Irradiated Hexagonal and Cubic Silicon Carbide

    Magnetic Resonance in 6H SiC

    Activation Analysis of the Impurities in Silicon Carbide

    The Epitaxial Growth of Beta Silicon Carbide

    The Properties of Some SiC Electroluminescent Diodes

    Silicon Carbide Cold Cathodes

    Formation of Cristobalite from Silicon Carbide

    Equilibrium Computations on the C-Cl-H-Si System

    Silicon Carbide as a Fission Product Barrier in Nuclear Fuels

    Epitaxial Growth of ß-Silicon Carbide

    Electronic Properties of N-Type ß-Silicon Carbide Crystals Grown from Solution

    Appendix on the Physical and Electronic Properties of SiC

    Author Index


Product details

  • No. of pages: 378
  • Language: English
  • Copyright: © Pergamon 1969
  • Published: January 1, 1969
  • Imprint: Pergamon
  • eBook ISBN: 9781483152615

About the Editors

H. K. Henisch

Affiliations and Expertise

The Pennsylvania State University, University Park, PA, USA

R. Roy

Affiliations and Expertise

Pennsylvania State University, University Park, PA, USA

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