Semiconductors Probed by Ultrafast Laser Spectroscopy Pt I

Semiconductors Probed by Ultrafast Laser Spectroscopy Pt I

1st Edition - April 12, 1985
This is the Latest Edition
  • Editor: R. R. Alfano
  • eBook ISBN: 9780323148863

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Description

Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume first explores the relaxation of energy and the momentum of hot carriers and then turns to relaxation of plasmas and phonons. It also discusses the dynamics of excitons, polaritons, and excitonic molecules and reviews transient transport and diffusion of carriers. Scientists, engineers, and graduate students will find this book invaluable.

Table of Contents


  • List of Contributors

    Preface

    Contents of Volume II

    I Relaxation of Carriers

    1. Relaxation of Momentum and Energy of Carriers in Semiconductors

    I. Introduction

    II. Relaxation Processes

    III. Momentum Relaxation

    IV. Energy Relaxation

    V. Experimental Results

    VI. Conclusion

    References

    2. Hot Carriers in Semiconductors Probed by Picosecond Techniques

    I. Introduction

    II. Theoretical Concepts

    III. Experimental Results

    References

    3. Ultrafast Relaxation Processes of Hot Photoexcited Carriers

    I. Introduction

    II. The Photoexcited Carrier Distribution Function

    III. The Photoexcited Carrier Transition Rates

    IV. Hot-Carrier Relaxation during Transient Photoexcitation

    V. Hot-Carrier Relaxation during Steady-State Photoexcitation

    VI. Summary and Conclusion

    References

    4. Luminescence and Absorption in Layered Semiconductors under Intense Excitation

    I. Introduction

    II. Lifetime of Excitons

    III. Exciton Collisions and Excitonic Molecules

    IV. Electron-Hole Plasma and Electron-Hole Drops

    V. Stimulated Emission

    References

    II Relaxation of Semiconductor Plasmas and Phonons

    5. Relaxation Processes in Nonequilibrium Semiconductor Plasma

    I. Introduction

    II. Ultrafast Response of Semiconductor Plasma

    III. Theoretical Background

    IV. Plasma Kinetics in GaAs

    V Concluding Remarks

    References

    6. Picosecond Spectroscopy of High-Density Electron-Hole Plasma in Direct-Gap Semiconductors

    I. Introduction

    II. Calculations of Ground-State Energy, Luminescence Spectra, and Energy Relaxation of EHP

    III. Experimental Technique

    IV. Observation of Spontaneous Luminescence Spectra

    V. Energy Relaxation Processes in EHP

    VI. Discussion of the Nature of EHP

    References

    7. Dynamics of High-Density Transient Electron-Hole Plasmas in Germanium

    I. Introduction

    II. The Physics of Nonlinear Absorption in Germanium

    III. Interband Saturation, Intervalence-Band Absorption, and Surface Recombination

    IV. Measurements of Nonlinear Carrier Diffusion: The Transient Grating Technique

    V. Anisotropic State-Filling

    VI. Summary and Conclusions

    References

    8. Ultrafast Relaxation of Optical Phonons Investigated with Picosecond Pulses

    I. Introduction

    II. Theoretical Remarks

    III. Decay Time of Coherently Excited Lattice Vibrations

    IV. Dynamics of Incoherently Excited Lattice Vibrations

    V. Conclusion

    References

    III Relaxation of Coupled Systems

    9. Picosecond Dynamics of Excitonic Polaritons and Excitonic Molecules

    I. Introduction

    II. Picosecond Laser System

    III. Picosecond Time-of-Flight Measurements of Excitonic Polaritons

    IV. Dynamic Relaxation Processes of Excitonic Polaritons

    V. Radiative Lifetime of Excitonic Molecules

    References

    10. New Picosecond Spectroscopies for Probing Excitonic Polaritons and Their Kinetics in Semiconductors

    I. Introduction

    II. Time-of-Flight Method

    III. Transient-Grating Spectroscopy

    IV. Induced Absorption Spectroscopy

    V. Conclusion

    References

    IV. Transient Transport and Diffusion of Carriers

    11. Diffusion of Hot Carriers at High Lattice and Electronic Temperatures

    I. Introduction

    II. General Thermodynamic Description

    III. Diffusion Equations

    IV. Experiments

    V. Concluding Remarks

    References

    12. Transient and Stationary Properties of Hot-Carrier Diffusivity in Semiconductors

    I. Introduction

    II. Transport Theory

    III. Steady-State Diffusion

    IV. Transient Diffusion

    V. Conclusion

    References

    13. Transient Transport in Semiconductors and Submicron Devices

    I. Introduction

    II. Overshoot Velocity Effects

    III. Experiment on High-Speed and Submicron-Length Devices

    IV. Moment-Balance Equations

    V. The Correlation Functions

    References

    Index

Product details

  • No. of pages: 480
  • Language: English
  • Copyright: © Academic Press 1985
  • Published: April 12, 1985
  • Imprint: Academic Press
  • eBook ISBN: 9780323148863

About the Editor

R. R. Alfano

Robert A. Alfano is Distinguished Professor and Fellow at The City College of City University of New York, USA. He is also an Optical Society of America; Fellow, and a Fellow of IEEE. He has been involved in developing ultrafast laser spectroscopic techniques and applications of these techniques to study ultrafast dynamical processes in physical, chemical, and biological systems. His research encompasses the study and development of supercontinuum, tunable solid-state lasers, nonlinear optical processes, application of optical spectroscopic techniques for medical diagnosis (optical biopsy), study of photon migration in turbid media, and development of optical imaging techniques for biomedical imaging (optical mammography). He has published more than 700 papers and holds 102 patents.

Affiliations and Expertise

Professor and Fellow, The City College of City University of New York, USA