Semiconductors Probed by Ultrafast Laser Spectroscopy Pt I - 1st Edition - ISBN: 9780120499014, 9780323148863

Semiconductors Probed by Ultrafast Laser Spectroscopy Pt I

1st Edition

Editors: R. R. Alfano
eBook ISBN: 9780323148863
Imprint: Academic Press
Published Date: 12th April 1985
Page Count: 480
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Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume first explores the relaxation of energy and the momentum of hot carriers and then turns to relaxation of plasmas and phonons. It also discusses the dynamics of excitons, polaritons, and excitonic molecules and reviews transient transport and diffusion of carriers. Scientists, engineers, and graduate students will find this book invaluable.

Table of Contents

List of Contributors


Contents of Volume II

I Relaxation of Carriers

1. Relaxation of Momentum and Energy of Carriers in Semiconductors

I. Introduction

II. Relaxation Processes

III. Momentum Relaxation

IV. Energy Relaxation

V. Experimental Results

VI. Conclusion


2. Hot Carriers in Semiconductors Probed by Picosecond Techniques

I. Introduction

II. Theoretical Concepts

III. Experimental Results


3. Ultrafast Relaxation Processes of Hot Photoexcited Carriers

I. Introduction

II. The Photoexcited Carrier Distribution Function

III. The Photoexcited Carrier Transition Rates

IV. Hot-Carrier Relaxation during Transient Photoexcitation

V. Hot-Carrier Relaxation during Steady-State Photoexcitation

VI. Summary and Conclusion


4. Luminescence and Absorption in Layered Semiconductors under Intense Excitation

I. Introduction

II. Lifetime of Excitons

III. Exciton Collisions and Excitonic Molecules

IV. Electron-Hole Plasma and Electron-Hole Drops

V. Stimulated Emission


II Relaxation of Semiconductor Plasmas and Phonons

5. Relaxation Processes in Nonequilibrium Semiconductor Plasma

I. Introduction

II. Ultrafast Response of Semiconductor Plasma

III. Theoretical Background

IV. Plasma Kinetics in GaAs

V Concluding Remarks


6. Picosecond Spectroscopy of High-Density Electron-Hole Plasma in Direct-Gap Semiconductors

I. Introduction

II. Calculations of Ground-State Energy, Luminescence Spectra, and Energy Relaxation of EHP

III. Experimental Technique

IV. Observation of Spontaneous Luminescence Spectra

V. Energy Relaxation Processes in EHP

VI. Discussion of the Nature of EHP


7. Dynamics of High-Density Transient Electron-Hole Plasmas in Germanium

I. Introduction

II. The Physics of Nonlinear Absorption in Germanium

III. Interband Saturation, Intervalence-Band Absorption, and Surface Recombination

IV. Measurements of Nonlinear Carrier Diffusion: The Transient Grating Technique

V. Anisotropic State-Filling

VI. Summary and Conclusions


8. Ultrafast Relaxation of Optical Phonons Investigated with Picosecond Pulses

I. Introduction

II. Theoretical Remarks

III. Decay Time of Coherently Excited Lattice Vibrations

IV. Dynamics of Incoherently Excited Lattice Vibrations

V. Conclusion


III Relaxation of Coupled Systems

9. Picosecond Dynamics of Excitonic Polaritons and Excitonic Molecules

I. Introduction

II. Picosecond Laser System

III. Picosecond Time-of-Flight Measurements of Excitonic Polaritons

IV. Dynamic Relaxation Processes of Excitonic Polaritons

V. Radiative Lifetime of Excitonic Molecules


10. New Picosecond Spectroscopies for Probing Excitonic Polaritons and Their Kinetics in Semiconductors

I. Introduction

II. Time-of-Flight Method

III. Transient-Grating Spectroscopy

IV. Induced Absorption Spectroscopy

V. Conclusion


IV. Transient Transport and Diffusion of Carriers

11. Diffusion of Hot Carriers at High Lattice and Electronic Temperatures

I. Introduction

II. General Thermodynamic Description

III. Diffusion Equations

IV. Experiments

V. Concluding Remarks


12. Transient and Stationary Properties of Hot-Carrier Diffusivity in Semiconductors

I. Introduction

II. Transport Theory

III. Steady-State Diffusion

IV. Transient Diffusion

V. Conclusion


13. Transient Transport in Semiconductors and Submicron Devices

I. Introduction

II. Overshoot Velocity Effects

III. Experiment on High-Speed and Submicron-Length Devices

IV. Moment-Balance Equations

V. The Correlation Functions




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© Academic Press 1984
Academic Press
eBook ISBN:

About the Editor

R. R. Alfano

Robert A. Alfano is Distinguished Professor and Fellow at The City College of City University of New York, USA. He is also an Optical Society of America; Fellow, and a Fellow of IEEE. He has been involved in developing ultrafast laser spectroscopic techniques and applications of these techniques to study ultrafast dynamical processes in physical, chemical, and biological systems. His research encompasses the study and development of supercontinuum, tunable solid-state lasers, nonlinear optical processes, application of optical spectroscopic techniques for medical diagnosis (optical biopsy), study of photon migration in turbid media, and development of optical imaging techniques for biomedical imaging (optical mammography). He has published more than 700 papers and holds 102 patents.

Affiliations and Expertise

Professor and Fellow, The City College of City University of New York, USA

Ratings and Reviews