Introduction and Overview. High Purity Germanium Detectors. Growth of Mercuric Iodide. Electrical Properties of Mercuric Iodide. Optical Properties of Red Mercuric Iodide. Growth Methods of CdTe Nuclear Detector Materials. Characterization of CdTe Nuclear Detector Materials. CdTe Nuclear Detectors and Applications. Cd1-xZnTe Spectrometers for Gamma- and X-ray Applications. Gallium Arsenide Radiation Detectors and Spectrometers. Lead Iodide. Other Materials: Statusand Prospects. Characterization and Quantification of Detector Performance. Electronics for X-Ray and Gamma-Ray Spectrometers. Summary and Remaining Issues for Room Temperature Radiation Spectrometers.
T.E. Schlesinger and R.B. James, Introduction and Overview: Semiconductor Nuclear Detectors. Applications. Outline of Text. L.S. Darken and C.E. Cox, High-Purity Germanium Detectors: Crystal Growth. Crystal Characterization. Large Volume Detectors. Charge Collection. Germanium X-Ray Detectors. Summary. A. Burger, D. Nason, and L.van den Berg, Growth of Mercuric Iodide: M. Schieber, The Crystal Structure and Phases of Mercuric Iodide. Properties Relevant to Crystal Growth.Growth of High Purity Mercuric Iodide Crystals. Crystal Perfection. Recent Developments. Challenges in Crystal Growth. X.J. Bao, T.E. Schlesinger, and R.B. James, Electrical Properties of Mercuric Iodide: Carrier Transport. Deep Levels. Photoconductivity. Surface Effects. Detector Performance. Conclusion. X.J. Bao, R.B. James, and T.E. Schlesinger, Optical Properties of Red Mercuric Iodide: Band Structure. Experimental Techniques and Measured Values for Optical Constants. Study of Processing by Photoluminescence Spectroscopy. Conclusions. M.Hage-Ali and P. Siffert, Growth Methods of CdTe Nuclear Detector Materials: Phase Diagram. Synthesis and Purification. Growth
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineersin modern industry.
@introbul:Key Features @bul:* One of the first comprehensive works on room-temperature nuclear detectors
- Edited by technical experts in the field
- Written by recognized authorities from industrial and academic institutions
- Focused on the electrical, optical, and structural properties of semiconductors used for room-temperature nuclear detectors
Materials scientists, electrical and optical engineers, condensed-matter physicists, astronomers, defense contractors in academia, industry, and government labs and agencies.
- No. of pages:
- © Academic Press 1995
- 8th August 1995
- Academic Press
- eBook ISBN:
- Hardcover ISBN:
CONSULTING PHYSICIST COLUMBUS, OHIO
WILLARDSON CONSULTING SPOKANE, WASHINGTON
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany