Semiconductor Statistics - 1st Edition - ISBN: 9780080095929, 9781483148946

Semiconductor Statistics

1st Edition

International Series of Monographs on Semiconductors

Authors: J. S. Blakemore
Editors: Heinz K. Henisch
eBook ISBN: 9781483148946
Imprint: Pergamon
Published Date: 1st January 1962
Page Count: 392
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Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects.
The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a ""quasi-equilibrium"" condition is inappreciably different from that of thermal equilibrium itself. Thus the results of Part I are not invalidated when the properties of a semiconductor are measured using small current densities. Part II considers non-equilibrium statistics for semiconductors with appreciable excess carrier densities. The various kinds of recombination mechanism are examined, and the consequences discussed for steady state and transient situations.
The subject matter of this book was deliberately restricted in scope in order to be of maximum value to scientists with an active interest in the basic properties of semiconducting materials.

Table of Contents

Preface Part I. Semiconductors in Thermal Equilibrium Chapter 1. Basic Concepts in the Electron Theory of Solids 1.1 Classical Theories of Metallic Conduction 1.2 Quantum Statistics and the Free Electron Theory 1.3 The Band Theory of Solids 1.4 The Effective Mass of Charge Carriers 1.5 Band Shapes for Some Representative Semiconductors 1.6 Some Varieties of Impurity Center (Flaw) Chapter 2. The Fermi Level—electron Density Equilibrium 2.1 The Fermi-Dirac Integrals 2.2 Interrelation of Free Electron Density and Fermi Level 2.3 Intrinsic Semiconductors 2.4 The Product nopo and ö for Intrinsic and Extrinsic Situations 2.5 Spatial Fluctuations of Carrier Density Chapter 3. Semiconductors Dominated by impurity levels 3.1 Occupancy Factor for Impurity Levels 3.2 Semiconductors Controlled by a Single Monovalent Donor Species 3.3 Semiconductors Dominated by Several Localized Levels 3.4 The Influence of Lattice Defects 3.5 Impurity Bands and the Behavior of an Impurity Metal Part II. Semiconductors Containing Excess Carriers Chapter 4. Factors Affecting Carrier Transition Rates 4.1 Reciprocity of Transition Probabilities 4.2 The Continuity Equations 4.3 Band-to-Band and Band-to-Flaw Transitions Chapter 5. Radiative and Radiationless Recombination 5.1 The Physics of The Two Processes 5.2 Behavior of the Radiative Lifetime Chapter 6. Band-to-band Auger Recombination 6.1 Electron-Electron and Hole-Hole Collisions 6.2 Behavior of the Auger Lifetime when mc < mv Chapter 7. Free Carrier Capture by Flaws 7.1 Flaw Capture Mechanisms 7.2 Behavior of the Extrinsic Lifetime 7.3 Interaction with Both Bands Chapter 8. Recombination Through a Set of


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© Pergamon 1962
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About the Author

J. S. Blakemore

About the Editor

Heinz K. Henisch

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