Semiconductor Nanowires I: Growth and Theory, Volume 93

• Contributors
• Preface
• Chapter One: Theory of VLS Growth of Compound Semiconductors
  • Abstract
  • 1 Introduction
  • 2 Fundamentals of VLS Growth
  • 3 Chemical Potentials for Au-Catalyzed VLS Growth of III–V Nanowires
  • 4 Growth Kinetics of III–V Nanowires
  • 5 Transport-Limited Growth of Nanowires
  • 6 Nucleation Rate in VLS Nanowires
  • 7 Position-Dependent Nucleation in Nanowires
  • 8 Self-consistent Growth Equation
  • 9 Ga-Catalyzed Growth of GaAs Nanowires
  • 10 Formation of Ternary Au-Catalyzed III–V Nanowires
  • 11 Impact of Growth Conditions on the Crystal Structure of III–V Nanowires
• Chapter Two: Strain in Nanowires and Nanowire Heterostructures
  • Abstract
  • 1 Introduction
  • 2 Methods of Calculation and Measurement of Strain in Nanowires
  • 3 Axial Heterostructures
  • 4 Nanowires on a Misfitting Substrate
  • 5 Core–Shell Heterostructures
  • 6 Other Possible Instances of Strain Relaxation in NWs
  • 7 Summary and Conclusions
• Chapter Three: van der Waals Heteroepitaxy of Semiconductor Nanowires
  • Abstract
  • 1 Introduction
  • 2 van der Waals (vdW) Heteroepitaxy of Semiconductor Nanowires
  • 3 vdW Heteroepitaxial Relationship and Heterointerface of Nanowire/2d-ALM
  • 4 Controlled vdW Epitaxy of Semiconductor Nanowires
  • 5 Optoelectronic Device Applications
  • 6 Conclusions and Perspectives
  • Acknowledgment
• Chapter Four: Position-Controlled Selective Growth of ZnO Nanostructures and Their Heterostructures
  • Abstract
  • 1 Introduction
  • 2 Selective Growth Methods and Mechanisms
  • 3 Selective Growth and Characterization of Nanostructures on Various Substrates
  • 4 LED Applications of Nanostructures and Their Heterostructures
  • 5 Conclusions
  • Acknowledgments
• Chapter Five: Hybrid III–V/Silicon Nanowires
  • Abstract
  • 1 Introduction
  • 2 Challenges in Epitaxial Si/III–V Interfaces
  • 3 III–V Nanowires on Si Substrates
  • 4 III–V/IV Radial Core–Shell Nanowires
  • 5 Axial III–V/IV Nanowire Heterostructures
  • 6 Conclusion
• Chapter Six: Atom Probe Tomography of Nanowires
  • Abstract
  • 1 Introduction
  • 2 Principles of APT
  • 3 Sample Requirements and Preparation Methods
  • 4 Atom Probe Operation
  • 5 Reconstruction
  • 6 Examples of Atom Probe Analysis of Nanowires
  • 7 Summary
  • Acknowledgments
• Index
• Contents of Volumes in this Series

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires.

• Contains comments from leading contributors in the field semiconductor nanowires
• Provides reviews of the most important recent literature
• Presents a broad view, including an examination of semiconductor nanowires

• Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book.

   

This book will be of interest for scientists and engineers performing fundamental and applied research and technology development in the field of one-dimensional nanowires. The book will particularly appeal to physicists, chemists, materials scientists, electronics engineers and mechanical engineers. This book will be of interest to students, researchers and practitioners working in the field of semiconductors, mechanical, electronic and optoelectronic devices.