Part I: Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics. Preface. Epitaxy for optoelectronic applications. Quantum size structures. Optoelectronic devices. Strained and mismatched structures. Interdiffusion and ion implantation. New devices and integration of devices. Optoelectronics on silicon. Bulk III-V crystals and new optoelectronic materials. Author index. Subject index.
Part II: Symposium B on Low Temperature Molecular Beam Epitaxial III-V Materials: Physics and Applications. Invited papers: LTMBE GaAs: present status and perspectives (G.L. Witt). Point defects in III-V materials grown by molecular beam epitaxy at low temperature (P. Hautojärvi et al.). GaAs, AlGaAs and InGaAs epilayers containing As clusters: semimetal/semiconductor composites (M.R. Melloch et al.). Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP (A. Claverie, Z. Liliental-Weber). Optoelectronic applications of LTMBE III-V materials (J.F. Whitaker). Applications of GaAs grown at a low temperature by molecular beam epitaxy (U.K. Mishra)
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics.
Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
- © North Holland 1993
- 21st December 1993
- North Holland
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Thomson-CSF, Orsay, France
Defense Research Agency, Great Malvern, UK
Universités Paris 6 & 7, Paris, France
Wright Laboratory, Dayton, OH, USA