Semiconductor Materials for Optoelectronics and LTMBE Materials

Semiconductor Materials for Optoelectronics and LTMBE Materials

Proceedings: Symposium A: Semiconductor Materials for Optoelectronic Devices/OEICs/Photonics and Symposium B: Low Temperature Molecular Beam Epitaxial III–V Materials: Physics/Applications of 1993 E-MRS Spring Conference Strasbourg, France, May 4–7, 1993

1st Edition - December 21, 1993

Write a review

  • Editors: J.P. Hirtz, C. Whitehouse, H.P. Meier, H.J. von Bardeleben, M.O. Manasreh
  • eBook ISBN: 9781483290423

Purchase options

Purchase options
DRM-free (PDF)
Sales tax will be calculated at check-out

Institutional Subscription

Free Global Shipping
No minimum order


These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics.Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

Table of Contents

  • Part I: Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics. Preface. Epitaxy for optoelectronic applications. Quantum size structures. Optoelectronic devices. Strained and mismatched structures. Interdiffusion and ion implantation. New devices and integration of devices. Optoelectronics on silicon. Bulk III-V crystals and new optoelectronic materials. Author index. Subject index.

    Part II: Symposium B on Low Temperature Molecular Beam Epitaxial III-V Materials: Physics and Applications. Invited papers: LTMBE GaAs: present status and perspectives (G.L. Witt). Point defects in III-V materials grown by molecular beam epitaxy at low temperature (P. Hautojärvi et al.). GaAs, AlGaAs and InGaAs epilayers containing As clusters: semimetal/semiconductor composites (M.R. Melloch et al.). Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP (A. Claverie, Z. Liliental-Weber). Optoelectronic applications of LTMBE III-V materials (J.F. Whitaker). Applications of GaAs grown at a low temperature by molecular beam epitaxy (U.K. Mishra)

Product details

  • Language: English
  • Copyright: © North Holland 1993
  • Published: December 21, 1993
  • Imprint: North Holland
  • eBook ISBN: 9781483290423

About the Editors

J.P. Hirtz

Affiliations and Expertise

Thomson-CSF, Orsay, France

C. Whitehouse

Affiliations and Expertise

Defense Research Agency, Great Malvern, UK

H.P. Meier

Affiliations and Expertise

Rüschlikon, Switzerland

H.J. von Bardeleben

Affiliations and Expertise

Universités Paris 6 & 7, Paris, France

M.O. Manasreh

Affiliations and Expertise

Wright Laboratory, Dayton, OH, USA

Ratings and Reviews

Write a review

There are currently no reviews for "Semiconductor Materials for Optoelectronics and LTMBE Materials"