Science and Technology of Defects in Silicon - 1st Edition - ISBN: 9780444886194, 9780080983646

Science and Technology of Defects in Silicon, Volume 9

1st Edition

Editors: C.A.J. Ammerlaan A. Chantre P. Wagner
eBook ISBN: 9780080983646
Imprint: North Holland
Published Date: 1st February 1990
Page Count: 518
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Table of Contents

A selection of contents: Status and future of silicon crystal growth (W. Zulehner). Hydrogen in silicon: state, reactivity and evolution after ion implantation (G.F. Cerofolini, G. Ottaviani). Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon (P. Stolz et al.). Radiative recombination channels due to hydrogen in crystalline silicon (L.T. Canham et al.). Hydrogenation of shallow and deep levels in silicon (A.E. Jaworowski, J.H. Robison). Transition metals in silicon and their gettering behaviour (K. Graff). 1.54 &mgr;m photoluminescence of erbium-implanted silicon (D. Moutonnet et al.). Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method (U. Reislöhner et al.). A study of carbon-implanted silicon for light-emitting diode fabrication (L.T. Canham et al.). The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon (A. Nylandsted Larsen et al.). Heavy metal contamination during integrated-circuit processing: measurements of contamination level and internal gettering efficiency by surface photovoltage (L. Jastrzebski). Activation and gettering of intrinsic metallic impurities during rapid thermal processing (B. Hartiti et al.). Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si (B. Pohoryles, A. Morawski). Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon (A. Henry et al.). Formation of buried CoSi2 layers by ion implantation, studied by Mössbauer spectroscopy and Rutherford backscattering spectroscopy (A. Vantomme et al.). Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs (N. Achtziger et al.). Surface characterization of high-dose Sb+ implanted rapid thermal annealed monocrystalline silicon (S.N. Kumar et al.). Substrate-damage-free laser recrystallization of polycrystalline silicon (R. Buchner et al.). Kinetics of silicon amorphization by N- implantation: dose rate and substrate temperature effects (A. Claverie et al.). Strain compensation effects on the annealing of Ge--B-implanted silicon (A. Ferreiro et al.). RTA-induced defects: a comparison between lamp and electron beam techniques (E. Susi et al.). Thermal annealing of excimer-laser-induced defects in virgin silicon (B. Hartiti et al.). A uniaxial stress study of a copper-related photoluminescence band in silicon (K.G. McGuigan et al.). Thermal donors and oxygen-related complexes in silicon (T. Gregorkiewicz, H.H. Bekman). Defect-related gate oxide breakdown (W. Bergholz et al.). Reduction of process-induced defects in power devices (H.J. Schulze). Simulation of oxygen precipitation in Czochralski grown silicon (M. Schrems). High quality silicon-on-insulator substrates by implanted oxygen ions (J. Belz et al.). Photoluminescence of defects introduced by deuterium plasmas in silicon (H. Weman et al.). Mapping of electrically active defects in silicon by optical-beam-induced reflectance (G.E. Carver et al.). An analysis of the oxygen condensation processes in silicon by laser-scanning tomography (P. Gall et al.). Bonding in clusters and condensed matter: the role of electron correlations (J. Friedel). Author Index. Subject Index.


This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.

In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.


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© North Holland 1989
North Holland
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Ratings and Reviews

About the Editors

C.A.J. Ammerlaan Editor

A. Chantre Editor

P. Wagner Editor

Affiliations and Expertise

Wacker Siltronic AG, Burghausen, Germany