Processing of 'Wide Band Gap Semiconductors

1. Doping Limits and Bandgap Engineering in Wide Gap IIVI Compounds Wolfgang Faschinger 1.0 INTRODUCTION 2.0 AB INITIO CALCULATIONS OF DOPING LIMITATIONS 3.0 THE FERMI LEVEL PINNING MODEL 4.0 DOPING AND BAND STRUCTURE ENGINEERING 5.0 OHMIC CONTACT TO p-ZnSe 6.0 CONCLUSIONS 2. Epitaxial Growth of II-VI Compounds by MOVPE Wolfgang Gebhardt and Berthold Hahn 1.0 INTRODUCTION 2.0 BINARY COMPOUNDS 3.0 TERNARY AND QUATERNARY COMPOUNDS 4.0 CONCLUDING REMARKS 3. Ohmic Contacts to II-VI and III-V Compound Semiconductors Tae-Jie Kim and Paul H. Holloway 1.0 INTRODUCTION 2.0 OHMIC CONTACTS TO GaAs 3.0 OHMIC CONTACTS TO InP 4.0 OHMIC CONTACTS TO GaN 5.0 OHMIC CONTACTS TO ZnSe 6.0 CONCLUSIONS 4. Dry Etching of SiC Joseph R. Flemish 1.0 INTRODUCTION 2.0 REQUIREMENTS OF DRY ETCHING IN SiC DEVICE FABRICATION 3.0 CHEMISTRY OF SiC DRY ETCHING 4.0 METHODS FOR PLASMA-ASSISTED ETCHING OF SiC 5.0 PROFILE AND MORPHOLOGY CONTROL WITH ECR ETCHING 6.0 SUMMARY 5. Processing of Silicon Carbide for Devices and Circuits Jeffrey B. Casady 1.0 BACKGROUND 2.0 SILICON CARBIDE DEVICE PROCESSING 3.0 SURVEY OF SiC DEVICES 4.0 SiC CIRCUITS AND SENSORS 5.0 CONCLUSIONS 6. Plasma Etching of III-V Nitrides Randy J. Shul 1.0 INTRODUCTION 2.0. ETCH TECHNIQUES 3.0 PLASMA CHEMISTRY 4.0 PRESSURE 5.0 ION ENERGY AND PLASMA DENSITY 6.0 TEMPERATURE DEPENDENCE 7.0 GROWTH T