Physics of Thin Films - 1st Edition - ISBN: 9780125330138, 9781483103303

Physics of Thin Films

1st Edition

Advances in Research and Development

Editors: Maurice H. Francombe John L. Vossen
eBook ISBN: 9781483103303
Imprint: Academic Press
Published Date: 28th December 1987
Page Count: 262
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Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films. The book is a collection of five articles, with one article per chapter. Chapter 1 covers ionized cluster beam deposition; epitaxy; and film-formation mechanism. Chapter 2 discusses the activated reactive evaporation process; the deposition of refractory compounds; the role of plasma in the process; and its applications. Chapter 3 focuses on ion-beam processing of optical thin films; ion sources and ion-surface interactions; and the different kinds of bombardment involved. Chapter 4 deals with laser induced etching - its mechanisms, methods, and applications. Chapter 5 talks about contacts to GaAs devices; Fermi-level pinning; and heterojunction contacts. The book is recommended for physicists and engineers in the field of electronics who would like to know more about thin films and the progresses in the field.

Table of Contents


Contributors to Volume 13 v


Editors' Note

Ionized Cluster Beam Deposition and Epitaxy

I. Introduction

II. Equipment for Ionized Cluster Beam Deposition and Epitaxy

III. Film-Formation Mechanism

IV. Film Deposition and Epitaxial Growth

V. Conclusions


The Activated Reactive Evaporation Process

I. Introduction

II. Processes for the Deposition of Refractory Compounds

III. Direct Evaporation

IV. Reactive Evaporation Processes

V. Activated Reactive Evaporation and the Role of Plasma

VI. Implementation of the Activated Reactive Evaporation Process

VII. Compounds Synthesized by the ARE Process and the Effect of Process Variables

VIII. Microstructure, Preferred Orientation, and Mechanical Properties of Refractory Compound Deposits

IX. Applications of the ARE Process

X. Summary


Ion-Beam Processing of Optical Thin Films

I. Introduction

II. Ion Sources

III. Ion-Surface Interactions

IV. Film Properties and Analysis Method

V. Substrate Bombardment

VI. Postdeposition Bombardment

VII. Ion-Beam Deposition of Optical Films

VIII. Conclusion


Laser-Induced Etching

I. Introduction

II. Mechanisms of Laser-Induced Etching

III. Methods of Laser-Induced Etching

IV. Applications of Laser-Induced Etching

V. Concluding Remarks


Contacts to GaAs Devices

I. Introduction

II. "Ideal" Contacts

III. The GaAs Surface and InterfaceFermi-Level Pinning

IV. Alloyed Ohmic Contacts to GaAs

V. Heterojunction Contacts

VI. Recent Results

VII. Summary


Author Index

Subject Index


No. of pages:
© Academic Press 1987
Academic Press
eBook ISBN:

About the Editor

Maurice H. Francombe

John L. Vossen

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