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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.
The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.
This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
- Broad review of optoelectronic applications of III-V nitrides
Academic and industrial researchers in semiconductors and micro-electronics
- No. of pages:
- © Elsevier Science 2004
- 17th December 2004
- Elsevier Science
- Hardcover ISBN:
- eBook ISBN:
Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
The University of Nottingham, School of Physics and Astronomy, UK
Director, Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, USA
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