Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.
The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.
This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
Broad review of optoelectronic applications of III-V nitrides
Academic and industrial researchers in semiconductors and micro-electronics.
- No. of pages:
- © Elsevier Science 2005
- 17th December 2004
- Elsevier Science
- eBook ISBN:
- Hardcover ISBN:
Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
The University of Nottingham, School of Physics and Astronomy, UK
Director, Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, USA