Nonradiative Recombination in Semiconductors

Nonradiative Recombination in Semiconductors

1st Edition - July 26, 1991

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  • Authors: V.N. Abakumov, V.I. Perel, I.N. Yassievich
  • eBook ISBN: 9780444600820

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In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels.The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier capture by impurity centers,capture restricted by diffusion, multiphonon processes, Augerprocesses, effect of electric field on capture and thermalemission of carriers.

Table of Contents

  • Preface to the series. Preface. Introduction. Chapters 1. Phenomenological theory of recombination. 2. Impurity centers. 3. Cascade capture by isolated attractive centers. 4. One-quantum transitions. 5. Experimental data on capture by attractive centers in Ge and Si. 6. Reciprocal influence of impurity centers. 7. Capture limited by diffusion. 8. Capture by repulsive centers. 9. Multiphonon capture and thermal emission. 10. Thermal emission and capture in an electric field. 11. Auger recombination. 12. Impurity Auger processes. Appendices. References. Author index. Subject index. Materials index. Cumulative index.

Product details

  • No. of pages: 336
  • Language: English
  • Copyright: © North Holland 1991
  • Published: July 26, 1991
  • Imprint: North Holland
  • eBook ISBN: 9780444600820

About the Authors

V.N. Abakumov

V.I. Perel

I.N. Yassievich

Affiliations and Expertise

A.F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, Leningrad, U.S.S.R.

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