In recent years, great progress has been made in the understanding of recombination processes controlling the number of excess free carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensive theoretical description of these processes. The authors have selected a number of experimental results which elucidate the underlying physical problems and enable a test of theoretical models.

The following topics are dealt with: phenomenological theory of recombination, theoretical models of shallow and deep localized states, cascade model of carrier capture by impurity centers, capture restricted by diffusion, multiphonon processes, Auger processes, effect of electric field on capture and thermal emission of carriers.

Table of Contents

Preface to the series. Preface. Introduction. Chapters 1. Phenomenological theory of recombination. 2. Impurity centers. 3. Cascade capture by isolated attractive centers. 4. One-quantum transitions. 5. Experimental data on capture by attractive centers in Ge and Si. 6. Reciprocal influence of impurity centers. 7. Capture limited by diffusion. 8. Capture by repulsive centers. 9. Multiphonon capture and thermal emission. 10. Thermal emission and capture in an electric field. 11. Auger recombination. 12. Impurity Auger processes. Appendices. References. Author index. Subject index. Materials index. Cumulative index.


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© 1991
North Holland
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