Table of Contents

Preface

Contributors

Chapter 1. Molecular beam epitaxy: fundamentals, historical background and future prospects

1.1 Introduction

1.2 Basics of MBE

1.3 The technology of MBE

1.4 Diagnostic techniques available in MBE systems

1.5 The physics of MBE

1.6 Historical background

1.7 Future prospects

1.8 Conclusions

References

Chapter 2. Molecular beam epitaxy in the ultra-vacuum of space: present and near future

2.1 Introduction

2.2 Wake shield facility

2.3 SHIELD

2.4 Current status

2.5 Conclusions

References

Chapter 3. Growth of semiconductor nanowires by molecular beam epitaxy

3.1 Introduction

3.2 Nanowires grown by molecular beam epitaxy: an overview

3.3 Growth dynamics: models and experimental studies

3.4 Characterisation and structural complexity

3.5 Optical properties

3.6 MBE-grown nanowire devices: from fundamentals to applications

3.7 Conclusions

References

Chapter 4. Droplet epitaxy of nanostructures

4.1 Introduction

4.2 Droplet epitaxy

4.3 Droplet deposition

4.4 Nanostructure formation

4.5 Capping and post-growth annealing procedures

4.6 Pulsed droplet epitaxy

Acknowledgements

References

Chapter 5. Migration-enhanced epitaxy for low-dimensional structures

5.1 Introduction

5.2 Area selective epitaxy by MEE

5.3 Polar diagram of the growth rate of III–V compound semiconductors

5.4 Formation of crystal facets at the boundaries of microstructures

5.5 Area selective growth on (001) GAAS substrate by MEE using AS4 and AS2

5.6 Area selective growth on (111)B GAAS substrate by MEE

5.7 Summary

Acknowledgements

References

Chapter 6. MBE growth of high-mobilit

Details

No. of pages:
744
Language:
English
Copyright:
© 2013
Published:
Imprint:
Elsevier Science
eBook ISBN:
9780123918598
Print ISBN:
9780123878397

About the author

Mohamed Henini

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Affiliations and Expertise

The University of Nottingham, School of Physics and Astronomy, UK

Reviews

"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini…brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications."--Reference & Research Book News, December 2013