This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.

MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.

Key Features

  • Condenses fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community


Scientists and engineers working with semiconductor materials and devices or with MBE or related deposition techniques

Table of Contents



Chapter 1. Molecular beam epitaxy: fundamentals, historical background and future prospects

1.1 Introduction

1.2 Basics of MBE

1.3 The technology of MBE

1.4 Diagnostic techniques available in MBE systems

1.5 The physics of MBE

1.6 Historical background

1.7 Future prospects

1.8 Conclusions


Chapter 2. Molecular beam epitaxy in the ultra-vacuum of space: present and near future

2.1 Introduction

2.2 Wake shield facility


2.4 Current status

2.5 Conclusions


Chapter 3. Growth of semiconductor nanowires by molecular beam epitaxy

3.1 Introduction

3.2 Nanowires grown by molecular beam epitaxy: an overview

3.3 Growth dynamics: models and experimental studies

3.4 Characterisation and structural complexity

3.5 Optical properties

3.6 MBE-grown nanowire devices: from fundamentals to applications

3.7 Conclusions


Chapter 4. Droplet epitaxy of nanostructures

4.1 Introduction

4.2 Droplet epitaxy

4.3 Droplet deposition

4.4 Nanostructure formation

4.5 Capping and post-growth annealing procedures

4.6 Pulsed droplet epitaxy



Chapter 5. Migration-enhanced epitaxy for low-dimensional structures

5.1 Introduction

5.2 Area selective epitaxy by MEE

5.3 Polar diagram of the growth rate of III–V compound semiconductors

5.4 Formation of crystal facets at the boundaries of microstructures

5.5 Area selective growth on (001) GAAS substrate by MEE using AS4 and AS2

5.6 Area selective growth on (111)B GAAS substrate by MEE

5.7 Summary



Chapter 6. MBE growth of high-mobilit


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© 2013
Elsevier Science
Print ISBN:
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"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini…brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications."--Reference & Research Book News, December 2013