Description

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

Readership

Engineers and technologists in the semiconductor, optoelectronic, optics, cutting tool, refractory fibers, filter and other industries.

Table of Contents

1. The Technology and Design of Molecular Beam Epitaxy Systems 1.0 Introduction 2.0 Molecular Beam Epitaxy 3.0 MBE System Development 4.0 Vacuum 5.0 MBE Components: Sources 6.0 MBE Components: Shutters and Beam Interruptors 7.0 MBE Components: Substrate Heater Designs 8.0 Temperature Measurement and Control 9.0 Flux Monitoring Techniques 10.0 Preparation, Diagnostics and Analysis 11.0 MBE System Design: Retrospect and Prospect 12.0 Process and System Automation References 2. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs 1.0 Introduction 2.0 The Development of High Purity MBE Technology 3.0 Growth Processes 4.0 Substrate Orientation 5.0 Oval Defects 6.0 Surface Morphology and Interface Roughness 7.0 Substrate Cleaning and MBE Growth: Impurity and Defect Incorporation 8.0 Isoelectronic and Unincorporated Dopants 9.0 Surface Preservation 10.0 Preparation of an MBE System for the Growth of High Purity III/V Semiconductors 11.0 Characterization Techniques for Epitaxial Semiconductor Layers 12.0 Impurity Energy Levels in GaAs and AIGaAs Acknowledgments References 3. Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties 1.0 Introduction 2.0 Chemistry 3.0 Group V Gas Sources 4.0 The MBE and Gas Handling Systems 5.0 Procedures 6.0 Single Bulk Layers 7.0 Quantum Well and Superlattice Studies Acknowledgments References 4. Molecul

Details

No. of pages:
792
Language:
English
Copyright:
© 1995
Published:
Imprint:
William Andrew
Print ISBN:
9780815513711
Electronic ISBN:
9780815518402