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Metal – Semiconductor Contacts and Devices

  • 1st Edition, Volume 13 - April 28, 1986
  • Authors: Simon S. Cohen, Gennady Sh. Gildenblat
  • Editor: Norman G. Einspruch
  • Language: English
  • eBook ISBN:
    9 7 8 - 1 - 4 8 3 2 - 1 7 7 9 - 6

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in… Read more

Metal – Semiconductor Contacts and Devices

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VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.