Thin films play a key role in the material science of microelectronics, and the subject matter of thin-films divides naturally into two headings: processing / structure relationship, and structure / properties relationship. The first volume of Materials Science in Microelectronics focuses on the first relationship – that between processing and the structure of the thin-film. The state of the thin film’s surface during the period that one monolayer exists - before being buried in the next layer – determines the ultimate structure of the thin film, and thus its properties. This volume takes into consideration the following potential influencing factors: crystal defects, void structure, grain structure, interface structure in epitaxial films, the structure of amorphous films, and reaction-induced structure. An ideal text or reference work for students and researchers in material science, who need to learn the basics of thin films.


Materials Science postgraduate students and researchers with an interest in thin films.

Table of Contents

Contents Acknowledgment Foreword Preface to Revised Edition Chapter I Deposition Parameters 1. Identification of Deposition Parameters that May Affect Thin Film Structure 2. Discussion of Vapor Deposition Parameters 2.1. Background Pressure of Chamber and Purity of Precursors 2.2. Line-of-Sight Travel of Incident Particles 2.3. Incident Particle Energy 2.4. Incident Particle Flux 2.5. Substrate and Its Cleanliness 2.6. Substrate Temperature 2.7. Composition of Deposit Relative to Target 2.8. Target 3. Deposition Parameters for Other Than PVD 4. Summary Chapter II Defect Structure 1. Intercolumn (Interfiber) “Void” Networks 1.1. Summary of Observations Concerning Intercolumn “Void” Networks 1.2. Origin of Intercolumn “Void” Networks 1.3. Effect of Processing On Void and Column Structure 1.4. Temperature, T1, Delineating Transition Between Presence and Absence of “Void” Networks 1.5. Crystalline Versus Amorphous Structure in Zone 1 1.6. Instability of “Void” Network 1.7. Deposition Methods That Eliminate The Formation of “Void” Networks 2. Other Defects Introduced During Deposition At Low Substrate Temperature 2.1. Point Defects 2.2. Line Defects – Dislocations 2.3. Grain Boundaries and Stacking Faults 2.4. Three-Dimensional Defects 3. Summary of The Relations Between Deposition Methods and Defect Structures Chapter III Grain Structure 1. Materials Science Background 2. Grain Morphology, Texture, and Size in As-Deposited Films 2.1. Vapor Deposition Onto Epitaxial Substrates in the Absence of Incident Energetic Particles. 2.2. Vapor Deposition Onto Non-Epitaxial Substrates in the Absence of Incident Energetic Particles. 2.3. Effect of Anisotropic Sticking Coefficient 2.4. Polycrystalline Semiconductors On Non-Epitaxial Substrates 2.5. Conclusions Regarding Grain Morphology, Size and Texture Produced Via Vapor Deposition in the Absence of Energetic Particles 3. Gra


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© 2005
Elsevier Science
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About the author

Eugene Machlin

Affiliations and Expertise

Columbia University , New York, USA