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Materials and Process Characterization - 1st Edition - ISBN: 9780122341069, 9781483217734

Materials and Process Characterization, Volume 6

1st Edition

Editors: Norman G. Einspruch Graydon B. Larrabee
eBook ISBN: 9781483217734
Imprint: Academic Press
Published Date: 28th June 1983
Page Count: 614
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Table of Contents

List of Contributors


Chapter 1 Characterization of Silicon Materials for VLSI

I. Introduction

II. Characterization Techniques

III. Polycrystalline Silicon

IV. Single-Crystal Silicon

V. Slice Preparation

VI. Summary

Appendix. Properties of 54 Elements in Single-Crystal Silicon


Chapter 2 Characterization of Silicon Epitaxial Films

I. Introduction

II. Epitaxial-Growth Process

III. Electrical Characterization

IV. Physical and Optical Characterization

V. Epitaxial-Defect Characterization

VI. Epitaxial-Defect Measurements

VII. Summary


Chapter 3 Characterization of Dielectric Films

I. Introduction and Background

II. Basic Structure and Properties of Gate Dielectrics

III. The Classification of Dielectric Charges

IV. The Spatial Location of Oxide Charge

V. The Amount and Energy Location of Interface Traps

VI. Temperature Effects on Mobile Ionic Charge

VII. Injected Charge Trapping in Oxide Films

VIII. The Role of Dielectric Layer Characterization in VLSI


Chapter 4 The Status of Dry-Developed Resists for Each Lithographic Technology

I. Introduction

II. The Total Dry Process

III. Ablative Resists

IV. Photoresist Analogs

V. X-Ray Resist Analogs

VI. Electron Resist Analogs

VII. Ion-Beam Resist Analogs

VIII. Conclusions


Chapter 5 Microlithography in Semiconductor Device Processing

I. Introduction

II. Pattern Generation

III. Photomask Fabrication

IV. Wafer Resist Patterning

V. Summary and Conclusions


Chapter 6 Formation and Characterization of Transition-Metal Silicides

I. Introduction

II. Formation and Characterization

III. Silicide Transformations

IV. Properties of Silicides

Appendix. Silicide Tables


Chapter 7 Materials Characterization for Ion Implantation

I. Introduction

II. Techniques

III. Applications

IV. Summary


Chapter 8 Surface Characterization for VLSI

I. Introduction

II. Techniques of Surface Analysis

III. Applications to Process Flow

IV. Future Trends and Needs


Chapter 9 Microelectronic Test Chips for VLSI Electronics

I. Historical Perspective

II. Introduction

III. Types of Test Structures

IV. Test-Chip Organization and Test-Structure Design

V. Test-Chip Testers and Advanced Test Structures

VI. Future Directions




Contents of Other Volumes


VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.


No. of pages:
© Academic Press 1983
28th June 1983
Academic Press
eBook ISBN:

Ratings and Reviews

About the Editors

Norman G. Einspruch

Graydon B. Larrabee