Laser and Electron Beam Processing of Materials

Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society.

The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed.

Metallurgists, engineers, and materials scientists will find the book very insightful.

Preface

Acknowledgments

Von Hippie Award Presentation

Some Thoughts on Directions in Materials Science

Part I Fundamental Mechanisms

Coupling of Beam Energy to Solids

Transient Laser-Induced Processes in Semiconductors

Macroscopic Theory of Pulsed Laser Annealing

Evidence for and Nature of a Nonthermal Mechanism of Pulsed Laser Annealing of Si

Plasma Bottlenecks: Dynamics of Laser-Induced Plasmas

Melting by Pulsed Laser Irradiation

Raman Temperature Measurements During Laser Heating of Silicon

Modelling of Solid-Phase Thin-Film Reactions Induced by a Scanning CW Laser

Adiabatic Approach to Transport Processes: A General Analytic Technique for Nonlinear Dynamic Heat and Mass Diffusion

Part II Enhanced Solubilities, Solute Trapping, and Zone Refining

Rapid Solidification

Solute Trapping

Supersaturated Substitutional Alloys in Silicon Formed by Ion Implantation and Laser Annealing

Solubility Limit of Dopants in Laser-Treated Silicon

Surface Segregation in Laser Annealing of Ion-Implanted Silicon

Surface Accumulation of Impurities After Laser-Induced Melting

Segregation Effects in Pulsed Laser Annealing of Ion-Implanted Silicon

The Direct Relation Between Segregation in Pulsed Laser Annealing and Equilibrium Crystal Growth

Part III Ultrarapid Heating and Cooling

Laser-Induced Order-Disorder Transitions in Silicon by Pulsed Uv Laser

Picosecond Laser Pulse-Induced Melting and Resolidification Morphology on Silicon

Dynamic Behavior of 30-ps Pulsed Laser Annealing in Ion-Implanted Si

Part IV Annealing and Recrystallization

Laser-Induced Epitaxy in Ion-Implanted and -Deposited Amorphous Layers

Damage Recrystallization Phenomena and Impurity-Segregation in Ion-Implanted and Laser Annealed Silicon

On Threshold Effects in Laser Annealing of Semiconductors

Electrolyte Electroreflectance Investigation of Ion-Damaged Laser-Annealed Silicon

Silicon Surface Structure and Surface Impurities After Pulsed Laser Annealing

Photoacoustic Detection Methods for Characterizing Laser Irradiation and Recrystallization of Semiconductors

Diagnostics of Laser-Annealed Semiconductor Materials Using Photoacoustic, Related Optical, and Rutherford Backscattering Techniques

Laser-Induced Explosive Radial Crystallization of Deposited Ge and Si Thin Films

An Analysis of the Explosive Crystallization of Amorphous Layers

Solid-Phase Crystallization Produced by Laser Scanning of Amorphous Ge Films: The Role of Latent Heat in Crystallization-Front Dynamics

Part V Elemental Semiconductors

Laser and Thermal Annealing of Ion-Implanted P-Type Dopants in Silicon

Laser Annealing of High Dose P+ As+ B+ O+ and C+ Implanted Si

Structure Stability of Arsenic-Implanted Si After Pulsed Laser Irradiation

Infrared Reflectivity and Transmissivity of Boron-Implanted, Laser-Annealed Silicon

Laser-Annealed Polycrystalline Silicon Characteristics

Characterization of Implanted Layers After Laser and Electron Beam Annealing

Characterization of Silicon Layers Implanted by Low Speed Molecular Ions and Annealed by a Pulsed Laser

Electronic Properties of Ion-Implanted Silicon Annealed With Microsecond Dye-Laser Pulses

CW Laser Annealing of Ion-Implanted Polycrystalline Silicon Films

Physical Properties of Ion-Implanted Sem-Annealed Silicon

Optimization of Two Wavelength Laser Annealing of Implanted Semiconductors

Part VI Compound Semiconductors

Laser and Electron Beam Annealing of GaAs

Laser Annealing Effects in Ion-Implanted GaAs

Pulsed E-Beam and Ruby Laser Annealing of Ion-Implanted GaAs

Annealing of Implanted Layers in Compound Semiconductors by Localized Beam Heating Techniques

Annealing of Ion-Implanted GaAs with a Pulsed Ruby Laser

Transient Annealing of Implanted GaAs by a Pulsed Electron Beam

A Comparison of Laser-Annealed Donor and Acceptor Ions Implantd into Gaas

Annealing of Ion-Implanted GaAs Layers Using a Nd-Yag Laser Beam of Large Dimension

Optical Properties of Laser-Annealed CdSe Thin Films

Photoluminescent Properties of Laser-Annealed GaA1As

Laser Annealing of Pb-Implanted InSb

Part VII Defects

Defects in Laser-Processed Semiconductors

Structural Defects in Laser- and Electron-Beam-Annealed Silicon

Hydrogen and Defects in Laser-Annealed Amorphous Silicon

Laser Annealing of a-Si: H

A Comparison of Ion-Implantation-Induced Deep Levels in Scanned Electron-Beam-Annealed and CW Laser-Annealed Silicon

Post Illumination Annealing of Defects in Laser-Processed Silicon Defect Luminescence in CW Laser-Annealed Silicon

EPR of Laser-Annealed, Ion-Implanted Silicon

Higher Order Defects in Silicon

TEM and RBS Studies of Single and Double Discrete Buried Damage Layers in P+-Implanted Si on Subsequent Laser Annealing

Positron Annihilation in Ion-Implanted, Laser-Annealed Silicon

Part VIII Ohmic Contacts

Overview of Ohmic-Contact Formation on N-Type Gaas by Laser and Electron Beam Annealing

Ohmic Contacts Produced by Laser Beams to Indium Implanted Into and Indium Deposited Onto GaAs

Pulsed Electron Beam Alloying of Au-Ge/Pt Ohmic Contacts to Gaas

Fabrication of Ohmic Contact on p-Type InP Using Ion Implantation and Laser Annealing

Redistribution of Implanted Zn IN InP After Q-Switched Laser Annealing and the Related Specific Contact Resistance

Metal-Semiconductor Interfaces by Pulsed Electron Beam Processing

Part IX Metal-Silicon Interactions

Laser- and Ion-Beam-Induced Reactions

Structure of Laser-Produced Silicide Layers

CW Laser-Induced Reactions for Silicide Formation

Silicide Formation by Millisecond Laser Pulses

Phase Transformation in Laser-Irradiated Au-Si Thin Films

Part X Deposited Layers

Characteristics of P+N Alloy Junctions Produced by Single Laser Pulses

Structure of P-N Junctions Alloyed by Pulsed Electron Beams

CW Laser Annealing Studies of Deposited Films

Scanning CW Laser-Induced Crystallization of Silicon on Amorphous Substrates

Pulsed Electron Beam Liquid Epitaxy

Cellular Solidification of Laser Processed Ge-Si Heterojunctions

Potential Applications of Transient Processes to Material Formation

Part XI Device Applications

Application of CW Beam Processing to Semiconductor Device Fabrication

Application of Laser Annealing to Silicon Device Fabrication*

Laser-Annealed Silicon Impatt Diodes

Electrical Characteristics of Laser-Annealed Polysilicon Resistors for Device Applications

Properties of Mosfets Fabricated in Laser-Annealed Polysilicon Films

Pulsed Laser and Electron Beam Annealing of Silicon Dioxide Layers on Silicon Structures

Electron Beam Annealing of Arsenic-Implanted Silicon in Windows Defined by Oxide

Laser Processing of Polycrystalline Silicon Solar Cells

Electron Beam and Laser Process Applications for Silicon Solar Cells

Characterization of Ion-Implanted and Pulse-Laser-Annealed Junctions; Application to Silicon Solar Cells

Laser-Induced Photochemical Reactions for Electronic Device Fabrication

The Effects of Laser Irradiation on Monolithic Resistors

Influence of Laser Irradiation on Diode-Leakage Current

Part XII Metals and Other Materials

Metastable Surface Alloys

Impurity Diffusion in Ion-Implanted A1 During Electron-Beam-Pulsed Annealing

Precipitation in Ion-Implanted A1 During Electron-Beam-Pulsed Annealing

Ion Implantation and Laser Annealing of High Tc Superconducting Materials

Laser Alloying of Deposited Metal Films on Nickel

Permanent Local Modification of the Magnetic Bubble Properties of Epitaxial Garnet Films by Laser Annealing

Constitution and Microstructure of Ag-Cu Alloys Produced by Continuous Laser Melt Quenching

Solidification Microstructure and Microsegregation of Laser-Glazed Ni-Al-Ta and Ni-Al-Cr Dendritic Monocrystals

Laser and Electron Beam Melting of Iron Base Hard Materials

Laser Surface Melting With Carbide Particle Injection

Consolidation of Metal Coatings by Electron Beam Melting

Author Index