
Laser and Electron Beam Processing of Materials
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Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society. The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed. Metallurgists, engineers, and materials scientists will find the book very insightful.
Table of Contents
Preface
Acknowledgments
Von Hippie Award Presentation
Some Thoughts on Directions in Materials Science
Part I Fundamental Mechanisms
Coupling of Beam Energy to Solids*
Transient Laser-Induced Processes in Semiconductors*
Macroscopic Theory of Pulsed Laser Annealing*
Evidence for and Nature of a Nonthermal Mechanism of Pulsed Laser Annealing of Si
Plasma Bottlenecks: Dynamics of Laser-Induced Plasmas
Melting by Pulsed Laser Irradiation
Raman Temperature Measurements During Laser Heating of Silicon
Modelling of Solid-Phase Thin-Film Reactions Induced by a Scanning CW Laser
Adiabatic Approach to Transport Processes: A General Analytic Technique for Nonlinear Dynamic Heat and Mass Diffusion
Part II Enhanced Solubilities, Solute Trapping, and Zone Refining
Rapid Solidification*
Solute Trapping
Supersaturated Substitutional Alloys in Silicon Formed by Ion Implantation and Laser Annealing
Solubility Limit of Dopants in Laser-Treated Silicon
Surface Segregation in Laser Annealing of Ion-Implanted Silicon
Surface Accumulation of Impurities After Laser-Induced Melting
Segregation Effects in Pulsed Laser Annealing of Ion-Implanted Silicon
The Direct Relation Between Segregation in Pulsed Laser Annealing and Equilibrium Crystal Growth
Part III Ultrarapid Heating and Cooling
Laser-Induced Order-Disorder Transitions in Silicon by Pulsed Uv Laser*
Picosecond Laser Pulse-Induced Melting and Resolidification Morphology on Silicon
Dynamic Behavior of 30-ps Pulsed Laser Annealing in Ion-Implanted Si
Part IV Annealing and Recrystallization
Laser-Induced Epitaxy in Ion-Implanted and -Deposited Amorphous Layers*
Damage Recrystallization Phenomena and Impurity-Segregation in Ion-Implanted and Laser Annealed Silicon
On Threshold Effects in Laser Annealing of Semiconductors
Electrolyte Electroreflectance Investigation of Ion-Damaged Laser-Annealed Silicon
Silicon Surface Structure and Surface Impurities After Pulsed Laser Annealing
Photoacoustic Detection Methods for Characterizing Laser Irradiation and Recrystallization of Semiconductors
Diagnostics of Laser-Annealed Semiconductor Materials Using Photoacoustic, Related Optical, and Rutherford Backscattering Techniques
Laser-Induced Explosive Radial Crystallization of Deposited Ge and Si Thin Films
An Analysis of the Explosive Crystallization of Amorphous Layers
Solid-Phase Crystallization Produced by Laser Scanning of Amorphous Ge Films: The Role of Latent Heat in Crystallization-Front Dynamics
Part V Elemental Semiconductors
Laser and Thermal Annealing of Ion-Implanted P-Type Dopants in Silicon
Laser Annealing of High Dose P+ As+ B+ O+ and C+ Implanted Si
Structure Stability of Arsenic-Implanted Si After Pulsed Laser Irradiation
Infrared Reflectivity and Transmissivity of Boron-Implanted, Laser-Annealed Silicon
Laser-Annealed Polycrystalline Silicon Characteristics
Characterization of Implanted Layers After Laser and Electron Beam Annealing
Characterization of Silicon Layers Implanted by Low Speed Molecular Ions and Annealed by a Pulsed Laser
Electronic Properties of Ion-Implanted Silicon Annealed With Microsecond Dye-Laser Pulses
CW Laser Annealing of Ion-Implanted Polycrystalline Silicon Films
Physical Properties of Ion-Implanted Sem-Annealed Silicon
Optimization of Two Wavelength Laser Annealing of Implanted Semiconductors
Part VI Compound Semiconductors
Laser and Electron Beam Annealing of GaAs*
Laser Annealing Effects in Ion-Implanted GaAs
Pulsed E-Beam and Ruby Laser Annealing of Ion-Implanted GaAs
Annealing of Implanted Layers in Compound Semiconductors by Localized Beam Heating Techniques
Annealing of Ion-Implanted GaAs with a Pulsed Ruby Laser
Transient Annealing of Implanted GaAs by a Pulsed Electron Beam
A Comparison of Laser-Annealed Donor and Acceptor Ions Implantd into Gaas
Annealing of Ion-Implanted GaAs Layers Using a Nd-Yag Laser Beam of Large Dimension
Optical Properties of Laser-Annealed CdSe Thin Films
Photoluminescent Properties of Laser-Annealed GaA1As
Laser Annealing of Pb-Implanted InSb
Part VII Defects
Defects in Laser-Processed Semiconductors*
Structural Defects in Laser- and Electron-Beam-Annealed Silicon*
Hydrogen and Defects in Laser-Annealed Amorphous Silicon
Laser Annealing of a-Si: H
A Comparison of Ion-Implantation-Induced Deep Levels in Scanned Electron-Beam-Annealed and CW Laser-Annealed Silicon
Post Illumination Annealing of Defects in Laser-Processed Silicon Defect Luminescence in CW Laser-Annealed Silicon
EPR of Laser-Annealed, Ion-Implanted Silicon
Higher Order Defects in Silicon
TEM and RBS Studies of Single and Double Discrete Buried Damage Layers in P+-Implanted Si on Subsequent Laser Annealing
Positron Annihilation in Ion-Implanted, Laser-Annealed Silicon
Part VIII Ohmic Contacts
Overview of Ohmic-Contact Formation on N-Type Gaas by Laser and Electron Beam Annealing*
Ohmic Contacts Produced by Laser Beams to Indium Implanted Into and Indium Deposited Onto GaAs
Pulsed Electron Beam Alloying of Au-Ge/Pt Ohmic Contacts to Gaas
Fabrication of Ohmic Contact on p-Type InP Using Ion Implantation and Laser Annealing
Redistribution of Implanted Zn IN InP After Q-Switched Laser Annealing and the Related Specific Contact Resistance
Metal-Semiconductor Interfaces by Pulsed Electron Beam Processing
Part IX Metal-Silicon Interactions
Laser- and Ion-Beam-Induced Reactions*
Structure of Laser-Produced Silicide Layers
CW Laser-Induced Reactions for Silicide Formation
Silicide Formation by Millisecond Laser Pulses
Phase Transformation in Laser-Irradiated Au-Si Thin Films
Part X Deposited Layers
Characteristics of P+N Alloy Junctions Produced by Single Laser Pulses
Structure of P-N Junctions Alloyed by Pulsed Electron Beams
CW Laser Annealing Studies of Deposited Films
Scanning CW Laser-Induced Crystallization of Silicon on Amorphous Substrates
Pulsed Electron Beam Liquid Epitaxy
Cellular Solidification of Laser Processed Ge-Si Heterojunctions
Potential Applications of Transient Processes to Material Formation
Part XI Device Applications
Application of CW Beam Processing to Semiconductor Device Fabrication*
Application of Laser Annealing to Silicon Device Fabrication*
Laser-Annealed Silicon Impatt Diodes
Electrical Characteristics of Laser-Annealed Polysilicon Resistors for Device Applications
Properties of Mosfets Fabricated in Laser-Annealed Polysilicon Films
Pulsed Laser and Electron Beam Annealing of Silicon Dioxide Layers on Silicon Structures
Electron Beam Annealing of Arsenic-Implanted Silicon in Windows Defined by Oxide
Laser Processing of Polycrystalline Silicon Solar Cells
Electron Beam and Laser Process Applications for Silicon Solar Cells
Characterization of Ion-Implanted and Pulse-Laser-Annealed Junctions; Application to Silicon Solar Cells
Laser-Induced Photochemical Reactions for Electronic Device Fabrication
The Effects of Laser Irradiation on Monolithic Resistors
Influence of Laser Irradiation on Diode-Leakage Current
Part XII Metals and Other Materials
Metastable Surface Alloys
Impurity Diffusion in Ion-Implanted A1 During Electron-Beam-Pulsed Annealing
Precipitation in Ion-Implanted A1 During Electron-Beam-Pulsed Annealing
Ion Implantation and Laser Annealing of High Tc Superconducting Materials
Laser Alloying of Deposited Metal Films on Nickel
Permanent Local Modification of the Magnetic Bubble Properties of Epitaxial Garnet Films by Laser Annealing
Constitution and Microstructure of Ag-Cu Alloys Produced by Continuous Laser Melt Quenching
Solidification Microstructure and Microsegregation of Laser-Glazed Ni-Al-Ta and Ni-Al-Cr Dendritic Monocrystals
Laser and Electron Beam Melting of Iron Base Hard Materials
Laser Surface Melting With Carbide Particle Injection
Consolidation of Metal Coatings by Electron Beam Melting
Author Index
Product details
- No. of pages: 788
- Language: English
- Copyright: © Academic Press 1980
- Published: January 28, 1980
- Imprint: Academic Press
- eBook ISBN: 9780323142533
About the Editor
C.W. White
Affiliations and Expertise
SOLID STATE DIVISION
OAK RIDGE NATIONAL LABORATORY
OAK RIDGE, TENNESSEE
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