Ion Implantation into Semiconductors, Oxides and Ceramics

Ion Implantation into Semiconductors, Oxides and Ceramics

1st Edition - March 1, 1999

Write a review

  • Editors: B.G. Svensson, H.A. Atwater, J.K.N. Lindner, P.L.F. Hemment
  • Hardcover ISBN: 9780080436135

Purchase options

Purchase options
Sales tax will be calculated at check-out

Institutional Subscription

Free Global Shipping
No minimum order


These proceedings contain the reviewed papers presented at the Symposium J on "Ion Implantation into Semiconductors, Oxides and Ceramics", which was held at the Spring Meeting of the European Materials Research Society in Strasbourg, France, 16-19, June 1998. The symposium attracted 110 contributions, with authors from 31 nations in 5 continents. It was thereby the largest in a series of E-MRS ion beam symposia, documenting the importance of ion beam techniques and research in this area. The aim of this symposium was to provide a forum for the discussion of new results in the implantation of materials from three different classes: semiconductors, oxides and ceramics.


Materials scientists, physicists, solid state physicists, surface scientists, electrochemists and electronic engineers

Table of Contents

  • Section headings and selected papers: Preface. I. Group IV Semiconductors. Modeling of the kinetics of dislocation loops (E. Lampin, V. Senez). Influence of argon and hydrogen ions energy on the structure of a-Si:H prepared by ion-beam-assisted evaporation (H. Rinnert et al.). EPR study of a-Si structural relaxations (B. Pivac et al.). II. Group III-V and Other Semiconductors. Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements (M.C. Ridgway et al.). Peculiarities of defect generation in Si+-implanted GaAs (211) (V.T. Bublik et al.). III. Ceramics and Oxides. Structural stability of ion bombarded non-metallic systems (P.M. Ossi, R. Pastorelli). Thermal stress resistance of ion implanted sapphire crystals (V.N. Gurarie et al.). IV. Phase Formation. Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon (J.K.N. Lindner, B. Stritzker). Wave-ordered structures formed on SOI wafers by reactive ion beams (V.K. Smirnov et al.). V. Optical Materials and Nanoclusters. Growth and characterization of Ge nanocrystals (S. Guha et al.). Thin amorphous gallium nitride films formed by ion beam synthesis (S.R.P. Silva et al.). VI. Measurement Techniques. Glancing incidence diffuse X-ray scattering studies of implantation damage in Si (K. Nordlund et al.). Magnetic behavior of Ni+ implanted silica (O. Cíntora-González et al.). Author index.

Product details

  • Language: English
  • Copyright: © Elsevier Science 1999
  • Published: March 1, 1999
  • Imprint: Elsevier Science
  • Hardcover ISBN: 9780080436135

About the Editors

B.G. Svensson

Affiliations and Expertise

Royal Institute of Technology, Kista-Stockholm, Sweden

H.A. Atwater

Affiliations and Expertise

California Institute of Technology, Pasadena, USA

J.K.N. Lindner

Affiliations and Expertise

University of Augsburg, Augsburg, Germany

P.L.F. Hemment

Affiliations and Expertise

Guildford, Surrey, U.K.

Ratings and Reviews

Write a review

There are currently no reviews for "Ion Implantation into Semiconductors, Oxides and Ceramics"