Ion Implantation and Beam Processing

Ion Implantation and Beam Processing

1st Edition - April 1, 1984

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  • Editors: J. S. Williams, J. M. Poate
  • eBook ISBN: 9781483220642

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Description

Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Table of Contents


  • List of Contributors

    Preface

    1 Introduction to Implantation and Beam Processing

    I. Beams and Materials

    II. Amorphization and Crystallization

    III. Fundamental Processes

    IV. Semiconductor Technology and Applications

    2 Amorphization and Crystallization of Semiconductors

    I. Introduction

    II. Implantation Damage and Amorphization

    III. Solid-Phase Crystallization

    IV. Liquid-Phase Crystallization

    V. Thermodynamic Considerations

    VI. Amorphization and Crystallization Perspectives

    References

    3 Application of the Boltzmann Transport Equation to Ion Implantation in Semiconductors and Multilayer Targets

    I. Introduction

    II. Range Distributions in Multilayer Targets

    III. Damage Distribution in Semiconductors

    IV. Summary

    References

    4 High Energy Density Collision Cascades and Spike Effects

    I. Introduction

    II. Collision Cascade Concepts

    III. Experimental Examples of Spike Effects

    IV. Thermal Spike Concepts

    V. Conclusions

    References

    5 Implantation of Insulators: Ices and Lithographic Materials

    I. Introduction

    II. Ion Erosion of Condensed Gas Films

    III. Ion Beam Lithography

    IV. Conclusions

    References

    6 Ion-Bombardment-Induced Composition Changes in Alloys and Compounds

    I. Introduction

    II. Sputtering of Elemental Targets

    III. Sputtering of Two-Component Systems

    IV. Particle Fluxes at the Surface

    V. High Fluence Ion Implantation

    VI. Conclusions

    References

    7 Ion Beam and Laser Mixing: Fundamentals and Applications

    I. Introduction

    II. Fundamental Mechanisms

    III. Materials Alterations Induced by Ion Beam and Pulsed Laser Processing

    IV. Concluding Remarks

    References

    8 High-Dose Implantation

    I. Introduction

    II. Implanting at High Doses

    III. Effect of Implant Temperature on Damage

    IV. Behaviour of High-Dose Implants

    V. High-Dose Ion Implanters

    VI. Summary

    References

    9 Trends of Ion Implantation in Silicon Technology

    I. Introduction

    II. Heavily N-Doped Silicon

    III. Interactive Effects in Double-Implanted Profiles

    IV. Diffusion from Implanted Polysilicon

    V. Summary and Conclusions

    References

    10 Implantation in Ga As Technology

    I. Introduction

    II. Annealing Techniques

    III. Low Dose N-Type Implants

    IV. High Dose N-Type Implants

    V. P-Type Implants

    VI. Summary and Conclusions

    References

    11 Contacts and Interconnections on Semiconductors

    I. Introduction

    II. Silicon

    III. Gallium Arsenide

    IV. Conclusion

    References

    Index


Product details

  • No. of pages: 432
  • Language: English
  • Copyright: © Academic Press 1984
  • Published: April 1, 1984
  • Imprint: Academic Press
  • eBook ISBN: 9781483220642

About the Editors

J. S. Williams

J. M. Poate

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