Ion Implantation and Beam Processing - 1st Edition - ISBN: 9780127569802, 9781483220642

Ion Implantation and Beam Processing

1st Edition

Editors: J. S. Williams J. M. Poate
eBook ISBN: 9781483220642
Imprint: Academic Press
Published Date: 1st April 1984
Page Count: 432
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Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Table of Contents

List of Contributors


1 Introduction to Implantation and Beam Processing

I. Beams and Materials

II. Amorphization and Crystallization

III. Fundamental Processes

IV. Semiconductor Technology and Applications

2 Amorphization and Crystallization of Semiconductors

I. Introduction

II. Implantation Damage and Amorphization

III. Solid-Phase Crystallization

IV. Liquid-Phase Crystallization

V. Thermodynamic Considerations

VI. Amorphization and Crystallization Perspectives


3 Application of the Boltzmann Transport Equation to Ion Implantation in Semiconductors and Multilayer Targets

I. Introduction

II. Range Distributions in Multilayer Targets

III. Damage Distribution in Semiconductors

IV. Summary


4 High Energy Density Collision Cascades and Spike Effects

I. Introduction

II. Collision Cascade Concepts

III. Experimental Examples of Spike Effects

IV. Thermal Spike Concepts

V. Conclusions


5 Implantation of Insulators: Ices and Lithographic Materials

I. Introduction

II. Ion Erosion of Condensed Gas Films

III. Ion Beam Lithography

IV. Conclusions


6 Ion-Bombardment-Induced Composition Changes in Alloys and Compounds

I. Introduction

II. Sputtering of Elemental Targets

III. Sputtering of Two-Component Systems

IV. Particle Fluxes at the Surface

V. High Fluence Ion Implantation

VI. Conclusions


7 Ion Beam and Laser Mixing: Fundamentals and Applications

I. Introduction

II. Fundamental Mechanisms

III. Materials Alterations Induced by Ion Beam and Pulsed Laser Processing

IV. Concluding Remarks


8 High-Dose Implantation

I. Introduction

II. Implanting at High Doses

III. Effect of Implant Temperature on Damage

IV. Behaviour of High-Dose Implants

V. High-Dose Ion Implanters

VI. Summary


9 Trends of Ion Implantation in Silicon Technology

I. Introduction

II. Heavily N-Doped Silicon

III. Interactive Effects in Double-Implanted Profiles

IV. Diffusion from Implanted Polysilicon

V. Summary and Conclusions


10 Implantation in Ga As Technology

I. Introduction

II. Annealing Techniques

III. Low Dose N-Type Implants

IV. High Dose N-Type Implants

V. P-Type Implants

VI. Summary and Conclusions


11 Contacts and Interconnections on Semiconductors

I. Introduction

II. Silicon

III. Gallium Arsenide

IV. Conclusion




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© Academic Press 1984
Academic Press
eBook ISBN:

About the Editor

J. S. Williams

J. M. Poate

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