Internal Photoemission Spectroscopy - 2nd Edition - ISBN: 9780080999296, 9780080999302

Internal Photoemission Spectroscopy

2nd Edition

Fundamentals and Recent Advances

Authors: Valeri Afanas'ev
eBook ISBN: 9780080999302
Hardcover ISBN: 9780080999296
Imprint: Elsevier
Published Date: 1st March 2014
Page Count: 404
Sales tax will be calculated at check-out Price includes VAT/GST
Price includes VAT/GST
× DRM-Free

Easy - Download and start reading immediately. There’s no activation process to access eBooks; all eBooks are fully searchable, and enabled for copying, pasting, and printing.

Flexible - Read on multiple operating systems and devices. Easily read eBooks on smart phones, computers, or any eBook readers, including Kindle.

Open - Buy once, receive and download all available eBook formats, including PDF, EPUB, and Mobi (for Kindle).

Institutional Access

Secure Checkout

Personal information is secured with SSL technology.

Free Shipping

Free global shipping
No minimum order.


The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well.

Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication.

Key Features

  • First complete model description of the internal photoemission phenomena
  • Overview of the most reliable energy barrier determination procedures and trap characterization methods
  • Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Table of Contents




List of Abbreviations

List of Symbols

1. Preliminary Remarks and Historical Overview

1.1 General Concept of IPE

1.2 IPE and Materials Analysis Issues

1.3 Interfaces of Wide Bandgap Insulators

1.4 Metal–Semiconductor Barriers

1.5 Energy Barriers at Semiconductor Heterojunctions

1.6 Energy Barriers at Interfaces of Organic Solids and Molecular Layers

1.7 Energy Barriers at Interfaces of Solids with Electrolytes


2. Internal Versus External Photoemission

2.1 Common Steps in Internal and External Photoemission

2.2 IPE-Specific Features


3. Photoemission into Insulators: Physical Model

3.1 The Quantum Yield

3.2 Quantum Yield as a Function of Photon Energy

3.3 Quantum Yield as a Function of Electric Field

3.4 Conditions of IPE Observation

3.5 Experimental Approaches to IPE


4. Internal Photoemission Spectroscopy Methods

4.1 IPE Threshold Spectroscopy

4.2 IPE Yield Spectroscopy

4.3 Spectroscopy of Carrier Scattering

4.4 Spectroscopy of Intrinsic PC

4.5 PI Spectroscopy


5. Injection Spectroscopy of Thin Layers of Solids

5.1 Basic Approaches in Injection Spectroscopy

5.2 Charge Injection Using IPE

5.3 Carrier Injection by Tunnelling

5.4 Excitation of Carriers in the Emitter Using the Electric Field

5.5 Electron–Hole Plasma Generation in the Collector

5.6 What Charge-Injection Technique to Chose?

5.7 Trapped Charge Monitoring and Characterization

5.8 Semiconductor Field-Effect Techniques of Charge Monitoring

5.9 Trapped Charge Probing by Electron IPE

5.10 Charge Probing Using Trap Depopulation

5.11 Monitoring the Injection-Induced Liberation of Hydrogen</


No. of pages:
© Elsevier 2014
eBook ISBN:
Hardcover ISBN:

About the Author

Valeri Afanas'ev

Professor V. Afanas’ev devoted more than 25 years of research to development of novel experimental methods for interface characterization. In particular, a number of techniques based on internal photoemission phenomena were shown to provide unique information regarding electron states in thin films of solids and at their interfaces. In recent years these methods were successfully applied to characterize novel semiconductor heterostructures for advanced micro- and nano-electronic devices.

Affiliations and Expertise

Laboratory of Semiconductor Physics, Department of Physics and Astronomy, Catholic University of Leuven, Belgium

Ratings and Reviews