Internal Photoemission Spectroscopy

Dedication

Preface

References

List of Abbreviations

List of Symbols

1. Preliminary Remarks and Historical Overview

1.1 General Concept of IPE

1.2 IPE and Materials Analysis Issues

1.3 Interfaces of Wide Bandgap Insulators

1.4 Metal–Semiconductor Barriers

1.5 Energy Barriers at Semiconductor Heterojunctions

1.6 Energy Barriers at Interfaces of Organic Solids and Molecular Layers

1.7 Energy Barriers at Interfaces of Solids with Electrolytes

References

2. Internal Versus External Photoemission

2.1 Common Steps in Internal and External Photoemission

2.2 IPE-Specific Features

References

3. Photoemission into Insulators: Physical Model

3.1 The Quantum Yield

3.2 Quantum Yield as a Function of Photon Energy

3.3 Quantum Yield as a Function of Electric Field

3.4 Conditions of IPE Observation

3.5 Experimental Approaches to IPE

References

4. Internal Photoemission Spectroscopy Methods

4.1 IPE Threshold Spectroscopy

4.2 IPE Yield Spectroscopy

4.3 Spectroscopy of Carrier Scattering

4.4 Spectroscopy of Intrinsic PC

4.5 PI Spectroscopy

References

5. Injection Spectroscopy of Thin Layers of Solids

5.1 Basic Approaches in Injection Spectroscopy

5.2 Charge Injection Using IPE

5.3 Carrier Injection by Tunnelling

5.4 Excitation of Carriers in the Emitter Using the Electric Field

5.5 Electron–Hole Plasma Generation in the Collector

5.6 What Charge-Injection Technique to Chose?

5.7 Trapped Charge Monitoring and Characterization

5.8 Semiconductor Field-Effect Techniques of Charge Monitoring

5.9 Trapped Charge Probing by Electron IPE

5.10 Charge Probing Using Trap Depopulation

5.11 Monitoring the Injection-Induced Liberation of Hydrogen

References

6. Analysis of the Charge Trapping Kinetics

6.1 Charge Trapping in the Injection-Limited Current Regime

6.2 First-Order Trapping Kinetics: Single Trap Model

6.3 First-Order Trapping Kinetics: Multiple Trap Model

6.4 Effects of Detrapping

6.5 Carrier Recombination Effects

6.6 Trap Generation During Injection

6.7 Trapping Analysis in Practice

6.8 Strong Carrier Trapping Regime

6.9 Carrier Trapping Near the Injecting Interface

6.10 Inhibition of Trapping by Coulomb Repulsion

6.11 Carrier Redistribution by Coulomb Repulsion

References

7. Silicon–Insulator Interface Barriers

7.1 Electron States at the Si/SiO₂ Interface

7.2 High-Permittivity Insulators on Semiconductors

7.3 Band Alignment at Interfaces of Silicon with High-Permittivity Insulators

References

8. Barriers at Interfaces of High-Mobility and Compound Semiconductors

8.1 Band Alignment at Interfaces of Group IV Semiconductors and Their Alloys with Insulating Oxides

8.2 Band Alignment at Interfaces of A_IIIB_V Semiconductors with Insulating Oxides

8.3 Band Alignment at Interfaces Between Oxide Semiconductors and Insulating Oxides

References

9. Electron Energy Barriers Between Conducting Materials and Insulating Oxides

9.1 Interface Barriers Between Elemental Metals and Oxide Insulators

9.2 Polycrystalline Si/Oxide Interfaces

9.3 Complex Metal Electrodes on Insulators

9.4 Modification of the Conductor/Insulator Barriers

References

10. Conclusions

References