Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy

Principles and Applications

1st Edition - November 20, 2007

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  • Authors: Valeri Afanas'ev, Valeri Afanas'ev
  • eBook ISBN: 9780080555898

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Description

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication.In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot” topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented.

Key Features

- First complete description of the internal photoemission phenomena
- A practical guide to internal photoemission measurements
- Describes reliable energy barrier determination procedures
- Surveys trap spectroscopy methods applicable to thin insulating layers
- Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces
- Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Readership

This book is suitable for academic researchers in solid state physics and electrical engineering, R&D units in semiconductor industry and graduate students in solid state physics and electrical engineering.

Table of Contents

  • List of Abbreviations
    List of Symbols
    Preface
    Chapter 1. Preliminary Remarks and Historical Overview
    Chapter 2. Internal versus External Photoemission
    Chapter 3. Model Description and Experimental Realization of IPE
    Chapter 4. Internal Photoemission Spectroscopy Methods
    Chapter 5. Injection Spectroscopy of Thin Layers of Solids: Internal Photoemission as Compared to Other Injection Methods
    Chapter 6. Trapped Charge Monitoring and Characterization
    Chapter 7. Charge Trapping Kinetics in the Injection-Limited Current Regime
    Chapter 8. Transport Effects in Charge Trapping
    Chapter 9. Semiconductor-Insulator Interface Barriers
    Chapter 10. Electron Energy Barriers Between Conducting and Insulating Materials
    Chapter 11. Spectroscopy of Charge Traps in Thin Insulating Layers
    Chapter 12. Conclusions
    References

Product details

  • No. of pages: 312
  • Language: English
  • Copyright: © Elsevier Science 2007
  • Published: November 20, 2007
  • Imprint: Elsevier Science
  • eBook ISBN: 9780080555898

About the Authors

Valeri Afanas'ev

Professor V. Afanas’ev devoted more than 25 years of research to development of novel experimental methods for interface characterization. In particular, a number of techniques based on internal photoemission phenomena were shown to provide unique information regarding electron states in thin films of solids and at their interfaces. In recent years these methods were successfully applied to characterize novel semiconductor heterostructures for advanced micro- and nano-electronic devices.

Affiliations and Expertise

Laboratory of Semiconductor Physics, Department of Physics and Astronomy, Catholic University of Leuven, Belgium

Valeri Afanas'ev

Professor V. Afanas’ev devoted more than 25 years of research to development of novel experimental methods for interface characterization. In particular, a number of techniques based on internal photoemission phenomena were shown to provide unique information regarding electron states in thin films of solids and at their interfaces. In recent years these methods were successfully applied to characterize novel semiconductor heterostructures for advanced micro- and nano-electronic devices.

Affiliations and Expertise

Laboratory of Semiconductor Physics, Department of Physics and Astronomy, Catholic University of Leuven, Belgium

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