Impurity Doping Processes in Silicon - 1st Edition - ISBN: 9780444860958, 9780080983578

Impurity Doping Processes in Silicon, Volume 2

1st Edition

Editors: F.F.Y. Wang
eBook ISBN: 9780080983578
Imprint: North Holland
Published Date: 1st January 1981
Tax/VAT will be calculated at check-out
72.95
43.99
54.95
Unavailable
File Compatibility per Device

PDF, EPUB, VSB (Vital Source):
PC, Apple Mac, iPhone, iPad, Android mobile devices.

Mobi:
Amazon Kindle eReader.

Institutional Access


Table of Contents

Preface. 1. Double-diffusion processes in silicon (A.F.W. Willoughby). 2. Ion implantation processes in silicon (J.L. Stone and J.C. Plunkett). 3. Source feed materials in ion beam technology (A. Axmann). 4. Growth of doped silicon layers by molecular beam epitaxy (J.E. Bean). 5. Neutron transmutation doping of silicon (B.D. Stone). 6. CVD doping of silicon (McDonald Robinson). 7. Concentration profiles of diffused dopants in silicon (R.B. Fair). 8. Impurity profile of implanted ions in silicon (H. Maes, W. Vandervorst and R. van Overstraeten). Subject index.


Description

This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.


Details

Language:
English
Copyright:
© North Holland 1981
Published:
Imprint:
North Holland
eBook ISBN:
9780080983578

About the Editors

F.F.Y. Wang Editor