Description

This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

Table of Contents

Preface. 1. Double-diffusion processes in silicon (A.F.W. Willoughby). 2. Ion implantation processes in silicon (J.L. Stone and J.C. Plunkett). 3. Source feed materials in ion beam technology (A. Axmann). 4. Growth of doped silicon layers by molecular beam epitaxy (J.E. Bean). 5. Neutron transmutation doping of silicon (B.D. Stone). 6. CVD doping of silicon (McDonald Robinson). 7. Concentration profiles of diffused dopants in silicon (R.B. Fair). 8. Impurity profile of implanted ions in silicon (H. Maes, W. Vandervorst and R. van Overstraeten). Subject index.

Details

Language:
English
Copyright:
© 1981
Published:
Imprint:
North Holland
Electronic ISBN:
9780080983578
Print ISBN:
9780444860958

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