Secure CheckoutPersonal information is secured with SSL technology.
Free ShippingFree global shipping
No minimum order.
Chapter headings and selected papers: Preface. GaN Growth. Efficient and uniform production of III-nitride films by multiwafer MOVPE (M. Deschler et al.). Plasma assisted molecular beam epitaxy growth of GaN (S. Einfeldt et al.). GaN thin films deposited by pulsed laser ablation in nitrogen and ammonia reactive atmospheres (D. Cole et al.). Electronic, Structural Properties and Characterisation. Characterization of AIN buffer layers on (0001)-sapphire substrates (Y.M. Le Vaillant et al.). Zinc-blende GaN: ab initio calculations (J.L.A. Alves et al.). The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy (P. Ruterana et al.). Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers (B. Pécz et al.). Optical Properties of GaN. Characterization of Ca and C implanted GaN (B. Mensching et al.). Optical and magneto-optical characterization of heteroepitaxial gallium nitride (B.J. Skromme). Optical characterization of MBE-grown GaNs (G. Pozina et al.). Photoluminescence properties of nanocrystalline AIN layers grown by pulse plasma assisted CVD (A. Olszyna et al.). Quantum Phenomena. Nanosecond pump-and-probe study of wurtzite GaN (T. Deguchi et al.). Two-photon spectroscopy in GaN (M. Steube et al.). Quantum beat spectroscopy on excitons in GaN (R. Zimmermann et al.). Nitride Alloys: AlGaN, InGaN and GaAsN. Properties and applications of MBE grown AlGaN (M. Stutzmann et al.). Comparative study of hexagonal and cubic GaN growth by RF-MBE (G. Feuillet et al.). Nitride Devices and Device Modelling. RT-CW operation of InGaN multi-quantum-well structure laser diodes (S. Nakamura). Electrical and optical properties of p-SiC/n-GaN heterostructures (M. Topf et al.).
Gallium Nitride and its alloys with InN and AlN, have recently emerged as important semiconductor materials with application to yellow, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN nitrides exhibit excellent longevity and brightness levels. Combined with red LEDs one can, for the first time, have full colour semiconductor displays.
The 4 day symposium was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997, provided a forum for active nitride researchers covering the most recent developments in all areas of nitride semiconductors. Sessions focused on the aspects of epitaxial and bulk growth of GaN and its alloys, on optical properties and structural and electrical characterisation, quantum phenomena and light-emitting devices such as LEDs and laser diodes.
For those with an interest in the development and application of semiconductor materials.
- © Elsevier Science 1998
- 22nd July 1998
- Elsevier Science
- Hardcover ISBN:
- eBook ISBN:
I. Phusikalisches Institut, Justus Liebig University of Giessen, Heinrich Buff Ring 16, D-35392 Giessen, Germany;
Elsevier.com visitor survey
We are always looking for ways to improve customer experience on Elsevier.com.
We would like to ask you for a moment of your time to fill in a short questionnaire, at the end of your visit.
If you decide to participate, a new browser tab will open so you can complete the survey after you have completed your visit to this website.
Thanks in advance for your time.