Hydrogen in Semiconductors - 1st Edition - ISBN: 9780127521343, 9780080864310

Hydrogen in Semiconductors, Volume 34

1st Edition

Hydrogen in Silicon

Editors: Jacques Pankove Noble Johnson
eBook ISBN: 9780080864310
Imprint: Academic Press
Published Date: 26th February 1991
Page Count: 648
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Table of Contents

J.I. Pankove and N.M. Johnson, Introduction. C.H. Seager, Hydrogenation Methods. J.I. Pankove, Hydrogenation of Defects in Crystalline Silicon. J.W. Corbett, P. Deabak, U.V. Desnica, and S.J. Pearton, Hydrogen Passivation of Damage Centers in Semiconductors. S.J. Pearton, Neutralization of Deep Levels in Silicon. J.I. Pankove, Neutralization of Shallow Acceptors in Silicon. N.M. Johnson, Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-type Silicon. M. Stavola and S.J. Pearton, Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon. A.D. Marwick, Hydrogen in Semiconductors: Ion Beam Techniques. C. Herring and N.M. Johnson, Hydrogen Migration and Solubility in Silicon. E.E. Haller, Hydrogen-Related Phenomena in Crystalline Germanium. J. Kakalios, Hydrogen Diffusion in Amorphous Silicon. J. Chevallier, B. Clerjaud, and B. Pajot, Neutralization of Defects and Dopants in IIIb1V Semiconductors. G.G. DeLeo and W.B. Fowler, Computational Studies of Hydrogen-Containing Complexes in Semiconductors. R.F. Kiefl and T.L. Estle, Muonium in Semiconductors. C.G. Van de Walle, Theory of Isolated Interstitial Hydrogen and Muonium in Crystalline Semiconductors. Each chapter includes references. Index.


Description

Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors.

Key Features

Provides the most in-depth coverage of hydrogen in silicon available in a single sourceIncludes an extensive chapter on the neutralization of defects in III*b1V semiconductorsCombines both experimental and theoretical studies to form a comprehensive reference

Readership

Scientists and engineers in the fields of electronic materials and devices and materials science as well as technical libraries.


Details

No. of pages:
648
Language:
English
Copyright:
© Academic Press 1991
Published:
Imprint:
Academic Press
eBook ISBN:
9780080864310

About the Editors

Jacques Pankove Editor

Affiliations and Expertise

University of Colorado, Boulder, U.S.A.

Noble Johnson Editor

Affiliations and Expertise

Xerox Palo Alto Research Center