Description

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Key Features

@introbul:Key Features @bul:* Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book * The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field * The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions * Provides the most complete review of device degradation mechanisms as well as drain engineering methods * Contains the most extensive reference list on the subject

Readership

The primary audience for this book includes silicon process, device, and design engineers (especially those in R&D), and scientists, as well as graduate students and researchers in silicon device technology, solid state science, electrical and electronic engineering, materials science, engineering, physics, and chemistry.This book is also suitable as a supplementary text for a graduate or short course on advanced MOS devices, device reliability, hot-carrier effects in MOS devices, VLSI device physics, or advanced CMOS design. It is useful for students working on device reliability research.

Table of Contents

(Chapter Headings): MOS Device Fundamentals. Hot-Carrier Injection Mechanisms. Hot-Carrier Device Degradation. AC and Process-Induced Hot-Carrier Effects. Hot-Carrier Effects at Low Temperature and Low Voltage. Dependence of Hot-Carrier Phenomena on Device Structure. As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices. Gate-to-Drain Overlatpped Devices (GOLD). References. Index.

Details

No. of pages:
312
Language:
English
Copyright:
© 1995
Published:
Imprint:
Academic Press
eBook ISBN:
9780080926223
Print ISBN:
9780126822403
Print ISBN:
9780123958044

About the authors

Eiji Takeda

Affiliations and Expertise

Hitachi Ltd.

Cary Yang

Affiliations and Expertise

Santa Clara University

Akemi Miura-Hamada

Affiliations and Expertise

Hitachi Ltd.