Hot-Carrier Effects in MOS Devices - 1st Edition - ISBN: 9780126822403, 9780080926223

Hot-Carrier Effects in MOS Devices

1st Edition

Authors: Eiji Takeda Cary Yang Akemi Miura-Hamada
Hardcover ISBN: 9780126822403
eBook ISBN: 9780080926223
Imprint: Academic Press
Published Date: 20th November 1995
Page Count: 312
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Description

(Chapter Headings): MOS Device Fundamentals. Hot-Carrier Injection Mechanisms. Hot-Carrier Device Degradation. AC and Process-Induced Hot-Carrier Effects. Hot-Carrier Effects at Low Temperature and Low Voltage. Dependence of Hot-Carrier Phenomena on Device Structure. As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices. Gate-to-Drain Overlatpped Devices (GOLD). References. Index.

Key Features

  • Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book
  • The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field
  • The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions
  • Provides the most complete review of device degradation mechanisms as well as drain engineering methods
  • Contains the most extensive reference list on the subject

Readership

Silicon process, device, and design engineers (especially those in R&D), and scientists, as well as graduate students and researchers in silicon device technology, solid state science, electrical and electronic engineering, materials science, engineering, physics, and chemistry. A supplementary text for a graduate or short course on advanced MOS devices, device reliability, hot-carrier effects in MOS devices, VLSI device physics, or advanced CMOS design. It is useful for students working on device reliability research

Table of Contents

(Chapter Headings): MOS Device Fundamentals. Hot-Carrier Injection Mechanisms. Hot-Carrier Device Degradation. AC and Process-Induced Hot-Carrier Effects. Hot-Carrier Effects at Low Temperature and Low Voltage. Dependence of Hot-Carrier Phenomena on Device Structure. As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices. Gate-to-Drain Overlatpped Devices (GOLD). References. Index.

Details

No. of pages:
312
Language:
English
Copyright:
© Academic Press 1995
Published:
Imprint:
Academic Press
eBook ISBN:
9780080926223
Hardcover ISBN:
9780126822403

About the Author

Eiji Takeda

Affiliations and Expertise

Hitachi Ltd.

Cary Yang

Affiliations and Expertise

Santa Clara University

Akemi Miura-Hamada

Affiliations and Expertise

Hitachi Ltd.