Description

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.

Key Features

@introbul:Key Features @bul:* The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices

Readership

Students, academics, researchers, and libraries. Will have strongest appeal for electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists.

Table of Contents

F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.

Details

No. of pages:
454
Language:
English
Copyright:
© 1994
Published:
Imprint:
Academic Press
eBook ISBN:
9780080864389
Print ISBN:
9780127521411
Print ISBN:
9780123994202

About the serial-volume-editors

R. K. Willardson

Affiliations and Expertise

WILLARDSON CONSULTING SPOKANE, WASHINGTON

Richard Kiehl

Affiliations and Expertise

IBM T.J. Watson Research Center

T. Gerhard Sollner

Affiliations and Expertise

Lincoln Laboratories