Description

High Performance Silicon Imaging covers the fundamentals of silicon image sensors, with a focus on existing performance issues and potential solutions. The book considers several applications for the technology as well. Silicon imaging is a fast growing area of the semiconductor industry. Its use in cell phone cameras is already well established, and emerging applications include web, security, automotive, and digital cinema cameras.

Part one begins with a review of the fundamental principles of photosensing and the operational principles of silicon image sensors. It then focuses in on charged coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors. The performance issues considered include image quality, sensitivity, data transfer rate, system level integration, rate of power consumption, and the potential for 3D imaging. Part two then discusses how CMOS technology can be used in a range of areas, including in mobile devices, image sensors for automotive applications, sensors for several forms of scientific imaging, and sensors for medical applications.

High Performance Silicon Imaging is an excellent resource for both academics and engineers working in the optics, photonics, semiconductor, and electronics industries.

Key Features

  • Covers the fundamentals of silicon-based image sensors and technical advances, focusing on performance issues
  • Looks at image sensors in applications such as mobile phones, scientific imaging, TV broadcasting, automotive, and biomedical applications

Readership

Electronics engineers, integrated circuit design engineers, life science researchers employing fluorescence techniques, physicists involved in optical microscopy

Table of Contents

  • Contributor contact details
  • Woodhead Publishing Series in Electronic and Optical Materials
  • Part I: Fundamentals
    • 1. Fundamental principles of photosensing
      • Abstract:
      • 1.1 Introduction
      • 1.2 The human vision system
      • 1.3 Photometry and radiometry
      • 1.4 History of photosensing
      • 1.5 Early developments in photodetector technology
      • 1.6 References
    • 2. Operational principles of silicon image sensors
      • Abstract:
      • 2.1 Introduction
      • 2.2 Silicon phototransduction
      • 2.3 Principles of charged coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) photosensing technologies
      • 2.4 Metal-oxide-semiconductor-capacitor (MOS-C) structure-based photodetectors
      • 2.5 p-n junction-based photodetectors
      • 2.6 Noise considerations in pixel structures
      • 2.7 High-performance pixel structures
      • 2.8 Miniaturization and other development strategies followed in image sensor technologies
      • 2.9 Hybrid and 3D detector technologies
      • 2.10 Conclusion
      • 2.11 References
    • 3. Charge coupled device (CCD) image sensors
      • Abstract:
      • 3.1 Introduction
      • 3.2 Charge coupled device (CCD) design, architecture and operation
      • 3.3 Illumination modes
      • 3.4 Imaging parameters and their characterization
      • 3.5 Conclusion and future trends
      • 3.6 References
    • 4. Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors
      • Abstract:
      • 4.1 Introduction
      • 4.2 Challenges facing a scaled-down frontside illuminated (FSI) sensor
      • 4.3 Basics of backside illuminated (BSI) sensor process integration
      • 4.4 Interface solutions to BSI sensors
      • 4.5 Conclusion
      • 4.6 References
    • 5. Circuits for high performance complementary metal-oxide-semic

Details

No. of pages:
476
Language:
English
Copyright:
© 2014
Published:
Imprint:
Woodhead Publishing
Electronic ISBN:
9780857097521
Print ISBN:
9780857095985
Print ISBN:
9780081013625

About the editor

Daniel Durini

Daniel Durini is the leader of a staff unit at the Central Institute for Engineering, Electronics and Analytics (ZEA-2) of the Forschungszentrum Jülich. He is an author of more than 45 papers and the holder of two patents in the area of CMOS photosensors.