Handbook of Plasma Processing Technology - 1st Edition - ISBN: 9780815512202, 9780815517641

Handbook of Plasma Processing Technology

1st Edition

Fundamental, Etching, Deposition and Surface Interactions

Authors: Stephen M. Rossnagel William D. Westwood Jerome J. Cuomo
eBook ISBN: 9780815517641
Hardcover ISBN: 9780815512202
Imprint: William Andrew
Published Date: 31st December 1990
Page Count: 546
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Description

This is a comprehensive overview of the technology of plasma-based processing, written by an outstanding group of 29 contributors.

Readership

Scientists, engineers, graduate students in the fields of semiconductors, thin films, energy, environment, automotive, medical and food packaging.

Table of Contents

  1. Techniques for IC Processing David B. Fraser and William D. Westwood 1.1 Introduction 1.2 Plasma Processing in Microelectronics 1.3 Summary
  2. Introduction to Plasma Concepts and Discharge Configurations Joseph L. Cecci 2.1 Introduction 2.2 Fundamental Plasma Discharge Concepts 2.3 Electron Heating and Energy Distribution 2.4 Breakdown 2.5 Glow Discharges 2.6 References
  3. Fundamentals of Sputtering and Reflection David N. Ruzic 3.1 Introduction 3.2 Modeling 3.3 Experimental Yields 3.4 Exceptions 3.5 References
  4. Bombardment-Induced Compositional Changes with Alloys, Oxides, Oxysalts, and Halides Roger Kelly 4.1 Introduction 4.2 The Role of the Surface Binding Energy 4.3 The Role of Segregation 4.4 The Role of Bombardment Induced Decomposition 4.5 Overview 4.6 References
  5. RF Diode Sputter Etching and Deposition Joseph S. Logan 5.1 Introduction 5.2 RF Discharges 5.3 Equipment 5.4 RF Sputter-Deposition 5.5 Sputter Etching Applications 5.6 Practical Matters 5.7 References
  6. Magnetron Plasma Deposition Processes Stephen M. Rossnagel 6.1 Introduction 6.2 Experiments 6.3 Summary 6.4 References
  7. Broad-Beam Ion Source Harold R. Kaufman and Raymond S. Robinson 7.1 Introduction 7.2 Gridded Ion Sources 7.3 Gridless Ion Sources 7.4 Concluding Remarks 7.5 References
  8. Reactive Ion Etching Gottlieb S. Oehrlein 8.1 Introduction 8.2 Etch Directionality 8.3 Plasma Chemical Considerations 8.4 Etch Selectivity 8.5 Contamination and Damage Issues 8.6 Reactor, Equipment Considerations 8.7 End Point Detection and Plasma Diagnostics 8.8 Current Trends 8.9 References
  9. Reactive Sputter Deposition William D. Westwood 9.1 Introduction 9.2 Plasma Based Sputtering Techniques: Hysteresis Effects 9.3 Reaction Kinetics: Models 9.4 Sputtered Species 9.5 Plasma Based Sputtering Systems 9.6 Reactive Sputter Deposition with Ion Beams 9.7 Conclusions 9.8 References
  10. Plasma Enhanced Chemical Vapor Deposition of Thin Films for Microelectronics Rafael Reif 10.1 Introduction 10.2 Nonequilibrium Glow Discharges 10.3 Potentials in RF Glow Discharges 10.4 Qualitative Model for PECVD 10.5 Commercial PECVD Systems 10.6 PECVD of Dielectric Films 10.7 PECVD of Polycrystalline Silicon Films 10.8 PECVD of Epitaxial Films 10.9 PECVD of Refractory Metals and their Silicides 10.10 PECVD of Diamond Films 10.11 Other Plasma Deposition Configurations 10.12 Summary 10.13 References
  11. Electron Cyclotron Resonance Microwave Discharges for Etching and Thin Film Deposition Jes Asmussen 11.1 Introduction 11.2 Energy Coupling and Power Balance in Steady State Microwave Discharges 11.3 Microwave Energy Coupling vs. Pressure in a Uniform Magnetic Field Gradient 11.4 Microwave Energy Coupling in a Nonuniform Static Magnetic Field 11.5 Microwave System Considerations 11.6 Fundamental ECR Applicator Configurations 11.7 Microwave Plasma Processing Reactors 11.8 Discharge Characteristics 11.9 Discussion 11.10 References
  12. Hollow Cathode Etching and Deposition Chris M. Horwitz 12.1 Introduction 12.2 Discharge Confinement Effects 12.3 Etched Sidewall Angle Control 12.4 Etching Performance 12.5 Si Deposition Performance 12.6 Conclusions 12.7 References
  13. Ion Plating Donald M. Mattox 13.1 Introduction 13.2 Processing Plasma Environment 13.3 Bombardment Effects on Surfaces and Film Growth 13.4 Vaporization Sources for Ion Plating 13.5 Bombardment Effects on Film Properties 13.6 Problem Areas 13.7 Applications 13.8 Summary 13.9 References
  14. Ionized Cluster Beam (ICB) Deposition Techniques Isao Yamada 14.1 Introduction 14.2 Experimental Techniques 14.3 Film Deposition with ICB 14.4 Summary 14.5 References
  15. The Activated Reactive Evaporation (ARE) Process Chandra V. Deshpandey and Rointan F. Bunshah 15.1 Introduction 15.2 Evaporation Processes for the Deposition of Compound Films 15.3 Thermodynamic and Kinetic Factors in Reactive Evaporation Process 15.4 Role of Plasma in Evaporation Based Processes 15.5 Implementation of the Activated Reactive Evaporation Process 15.6 Recent Developments in the ARE Process 15.7 Structure and Properties of the Films 15.8 Materials Synthesized Using the ARE Process 15.9 Future Outlook and Perspectives 15.10 Conclusions 15.11 References
  16. Formation of Thim Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD) Gerold Locovsky, David V. Tsu, and Robert J. Markunas 16.1 Introduction 16.2 Background û CVD Processes 16.3 The Remote CVD Deposition Process 16.4 Chemical Reaction Pathways in the Remote PECVD Process 16.5 Selected Bulk Properties of Deposited Thin Films 16.6 Remote PECVD Dielectric Films in Device Structures 16.7 Recent Developments in Remote PECVD 16.8 Summary 16.9 References
  17. Selective Bias Sputter Deposition Soren Berg and Claes Nender 17.1 Introduction 17.2 Substrate Dependent Bias Sputter Deposition 17.3 Deposition-Etching Balance in Bias Sputtering 17.4 Sputtering Yield Values at the Film-Substrate Interface 17.5 Selective Bias Sputter Deposition 17.6 Selective Bias Sputter Etching 17.7 The Self-Limiting Etch Depth Technique 17.8 Conclusions 17.9 References
  18. Vacuum Arc-Based Processing David Sanders 18.1 Introduction 18.2 Categories of Vacuum Arcs 18.3 Source Design Considerations 18.4 Coatings from Arcs (Structures and Properties) 18.5 Applications and Opportunities 18.6 Gaps in Understanding 18.7 Conclusion 18.8 References
  19. Ion Source Interactions: General Understandings Russell Messier, Joseph E. Yehoda, and Lawrence J. Pilione 19.1 Introduction 19.2 Preparation-Ion Bombardment Relations 19.3 Ion Bombardment-Property Relations 19.4 Ion Bombardment-Structure Relations 19.5 The Interaction of Ions with the Growing Film 19.6 Conclusions 19.7 References
  20. Ion Assisted Deposition James J. McNally 20.1 Introduction 20.2 Background 20.3 Experimental Apparatus 20.4 Properties of IAD Films 20.5 Properties of Dual IBS Films 20.6 Advantages and Limitations 20.7 Conclusion 20.8 References
  21. Microstructural Control of Plasma-Sputtered Refractory Coatings David W. Hoffman and Robert C. McCune 21.1 Introduction 21.2 Bias Sputtering 21.3 Coincidental Control of Coatings Deposited by Plasma Sputtering 21.4 Modelling of Matter-Energy Co-Deposition in Refractory Coatings 21.5 References

Details

No. of pages:
546
Language:
English
Copyright:
© William Andrew 1990
Published:
Imprint:
William Andrew
eBook ISBN:
9780815517641
Hardcover ISBN:
9780815512202

About the Author

Stephen M. Rossnagel

William D. Westwood

Jerome J. Cuomo

Reviews

"The text provides and excellent reference for plasma processing." - SAMPE Journal