The book is divided in seven sections, I: SiGe Growth and Processing, Strain Relaxation and Related Characterization. II: Carbon Incorporation, SiGe(C)Alloys and Heterostructures. III: Electrical and Optical Properties of SiGe(C)Alloys and Heterostructures. IV: Er-Doped Silicon, Si/SiO2 Heterostructures, Si Nanoparticles in SiO2 in SiO2 and Porous SiGe. V: Electrical Devices. VI: SiGe/Si Quantum Dots and Wires. VII: Luminescence and Optical Devices. Detailed contents are available by contacting the Publisher.
These proceedings contain the majority of papers presented at Symposium D, "Group IV heterostructures, physics and devices (Si,Ge,C,&agr;-Sn)", of the Spring Meeting of the European Materials Research Society, held at the Congress Centre, Strasbourg, France, 4-7 June 1996. This Symposium was attended by about 150 scientists from throughout the world, among whom 18 were invited speakers.
The aim of the Symposium was to discuss the most recent results in all fields of Group IV heterostructures and devices from fundamental physics to industrial applications. Regular and invited contributions were then welcomed which addressed the different aspects of growth, the effects of strain relaxation, particularly in SiGeC alloys, the basic optical and electrical properties of heterostructures and low-dimensional structures, the microelectronic and optoelectronics, such as rare-earth doping techniques, was also selected. Except for minor changes, the order of papers presented in this special issue of Thin Solid Films closely follows the order of topics listed above as well as the order of sessions at the Symposium.
- © Elsevier Science 1997
- 18th December 1997
- Elsevier Science
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Institut d'Electronique Fondamentale, Université de Paris-Sud, Orsay Cedex, France
Institut de Electronique Fondamentale, Université Paris-Sud, Orsay, France
IBM TJ Watson Research Center, Yorktown Heights, NY, USA