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Germanium Silicon: Physics and Materials - 1st Edition - ISBN: 9780127521640, 9780080864549

Germanium Silicon: Physics and Materials, Volume 56

1st Edition

Serial Volume Editors: John Bean Robert Hull
Serial Editors: Robert Willardson Eicke Weber
Hardcover ISBN: 9780127521640
eBook ISBN: 9780080864549
Imprint: Academic Press
Published Date: 2nd November 1998
Page Count: 444
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Table of Contents

J.C. Bean, Growth Techniques and Procedures. R. Hull, Misfit Strain Accommodation in SiGe Heterostructures. M.J. Shaw and M. Jaros, Fundamental Physics of Strained Layer GeSi: Quo Vadis? F. Cerdeira, Optical Properties. S.A. Ringel and P.N. Grillot, Electronic Properties and Deep Levels in Germanium-Silicon. J.C. Campbell, Optical Applications. K. Eberl, K. Brunner, and O.G. Schmidt, Si1-yCy and Si1-x-yGexCy Alloy Layers. Subject Index.


Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.


Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).


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© Academic Press 1998
2nd November 1998
Academic Press
Hardcover ISBN:
eBook ISBN:

Ratings and Reviews

About the Serial Volume Editors

John Bean

Affiliations and Expertise

University of Virginia, Charlottesville

Robert Hull

Affiliations and Expertise

University of Virginia, Charlottesville

About the Serial Editors

Robert Willardson

Affiliations and Expertise


Eicke Weber

Affiliations and Expertise

Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany