GaN Transistor Modeling for RF and Power Electronics

GaN Transistor Modeling for RF and Power Electronics

Using The ASM-GaN-HEMT Model

1st Edition - January 1, 2023

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  • Authors: Yogesh Singh Chauhan, Sheikh Aamir Ahsan, Ahtisham Ul Haq Pampori, Raghvendra Dangi
  • Paperback ISBN: 9780323998710

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Description

The aim of GaN Transistor Modeling for RF and Power Electronics is to cover all aspects of characterization and modelling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects including trapping, self-heating, field plate effects etc to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as Power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology especially for circuit designers, materials science and device engineers as well as academic researchers and students.

Key Features

  • Provides an overview of the operation and physics of GaN-based transistors
  • Describes indepth all aspects of the ASM-HEMT model for GaN circuits, which is an industry standard model, by the developers of the model
  • Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction

Readership

Materials Scientists and Engineers; Electrical Engineers; Physicists

Table of Contents

  • Part I: Introduction

    Chapter 1: GaN Device Physics

    Chapter 2: GaN HEMT Models

    Part II: ASM-HEMT Model

    Chapter 3: Surface Potential, 2DEG, and Drain Current Model

    Chapter 4: Self-Heating and Temperature Effects

    Chapter 5: Noise and Gate Current

    Part III: ASM-HEMT for GaN Power Electronics

    Chapter 6: GaN Power Device Characterization

    Chapter 7: Terminal Charges and Capacitances

    Chapter 8: TCAD Simulation

    Chapter 9: Switching Collapse

    Part IV: ASM-HEMT for GaN RF Electronics

    Chapter 10: Characterization of RF GaN HEMTs

    Chapter 11: RF Modeling-I

    Chapter 12: RF Modeling-II

    Part V: Miscellaneous

    Chapter 13: Parameter Extraction

    Chapter 14: Model Quality Testing

Product details

  • No. of pages: 425
  • Language: English
  • Copyright: © Woodhead Publishing 2023
  • Published: January 1, 2023
  • Imprint: Woodhead Publishing
  • Paperback ISBN: 9780323998710

About the Authors

Yogesh Singh Chauhan

Yogesh Singh Chauhan
Yogesh Singh Chauhan is a professor at Indian Institute of Technology Kanpur, India. He was with Semiconductor Research & Development Center at IBM Bangalore during 2007 – 2010; Tokyo Institute of Technology in 2010; University of California Berkeley during 2010-2012; and ST Microelectronics during 2003-2004. He is the developer of several industry standard SPICE models: ASM-GaN-HEMT model, BSIM-BULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4 and BSIM-SOI models. His research interests are characterization, modeling, and simulation of semiconductor devices and RF circuit design. He is the Fellow of IEEE, Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He has served in the technical program committees of IEDM, SISPAD, ESSDERC, EDTM, and VLSI Design conferences. He has published more than 250 papers in international journals and conferences.

Affiliations and Expertise

Associate Professor at the Dept. of Electrical Engineering, Indian Institute of Technology Kanpur

Sheikh Aamir Ahsan

Sheikh Aamir Ahsan received his PhD from Nanolab, Indian Institute of Technology Kanpur in 2017. He is currently an Assistant Professor of Electronics and Communication Engineering with the National Institute of Technology Srinagar, where he is involved in nanoelectronic device - simulation and theoretical modeling for circuit design. He was a visiting researcher with Keysight Technologies in 2016 and a postdoc at the New York University in 2018. He is the co-developer of the Industry Standard ASM-GaN-HEMT Model and also the winner of the Science and Engineering Research Board Early Career Research Award 2019.

Affiliations and Expertise

Department Of Electronics and Communication Engineering,National Institute of Technology Srinagar, Hazratbal, Srinagar Jammu & Kashmir – 190006 Country: India

Ahtisham Ul Haq Pampori

Ahtisham Pampori is a doctoral student at the Indian Institute of Technology Kanpur (IIT Kanpur), currently working on the characterization and modeling of GaN HEMT RF devices. He is one of the developers of ASM-HEMT, an industry standard model for AlGaN/GaN HEMTs. His research is focused on the modeling and characterization of GaN HEMTs and their applications in RF systems. He is a recipient of the prestigious Prime Minister's Research Fellowship (PMRF). He holds his bachelor’s degree in Electronics and Communications Engineering from NIT Srinagar.

Affiliations and Expertise

Department of Electrical Engineering Indian Institute of Technology Kanpur, U.P. – 208016 Country: India

Raghvendra Dangi

Raghvendra Dangi is a research scholar at the Indian Institute of Technology Kanpur (IIT Kanpur), He is one of the co-developers of an industry standard model of ASM-HEMT for AlGaN/GaN HEMTs. He received the master’s degree in VLSI design from the Visvesvaraya National Institute of Technology, Nagpur. His research involves the characterization and modeling of AlGaN/GaN HEMT devices.

Affiliations and Expertise

Department of Electrical Engineering Indian Institute of Technology Kanpur, U.P. – 208016 Country: India

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