Festkörper Probleme IX

Festkörper Probleme IX: Advances in Solid State Physics presents a model for the behavior of electrons in non-crystalline materials. This book describes some experimental evidence that supports for the behavior of electrons. Organized into 16 chapters, this book begins with an overview of crystallization, glass forming, and melting processes in systems forming chalcogenide glasses. This text then describes the theory of the transport properties of electrons in non-crystalline solids and liquids. Other chapters consider the optical and electrical properties of amorphous semiconductors wherein the treatment is mainly restricted to the elements selenium, germanium, and tellurium. This book discusses as well the basic aspects of the optical phenomena of the Jahn–Teller effect, with emphasis on some criteria of the strength and observability of the Jahn–Teller effect. The final chapter deals with the methods for processing emulsion and metal film masks. This book is a valuable resource for solid state physicists.

Teil I. Referate des Fachausschusses „Halbleiter"

Part I. Plenary Lectures of the Professional Group "Semiconductor Physics"

Struktur und Bindungsverhältnisse in Amorphen Halbleitern

Charge Transport in Non-Crystalline Semiconductors

Optische und Elektrische Eigenschaften von Amorphen Halbleitern

Light Scattering in Semiconductors

Der Jahn-Teller-Effekt

Elektrische Instabilitäten in Halb- und Photoleitern

Über die Physik des Lawinendurchbruches in Halbleitern

Analytic Properties of Thermodynamic Functions and Phase Transitions

Die Elektronische Bandstruktur in äußeren Magnetfeldern

Teil II. Hauptvorträge der Europäischen Tagung des IEEE

Part II. Invited Papers of the European Meeting of the IEEE

Physical Properties of Transferred-Electron and Avalanche Microwave Devices

Neue Ergebnisse an MIS-Transistoren

The Application of Ion Implantation to Semiconductor Devices

Computer Device Modeling

Monolithische Speicher

Thyristoren für hohe Spannungen

Moderne Verfahren zur Herstellung von Masken für Halbleiterschaltungen