Epitaxial Silicon Technology

Epitaxial Silicon Technology

1st Edition - October 28, 1986

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  • Editor: B Baliga
  • eBook ISBN: 9780323155458

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Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.

Table of Contents

  • Preface

    1 Silicon Vapor-Phase Epitaxy

    1.1 Introduction

    1.2 Chemical Vapor Deposition

    1.3 Growth Kinetics and Mechanisms

    1.4 Nucleation

    1.5 Dopant Incorporation

    1.6 Surface Morphology and Epitaxial Defects

    1.7 Epitaxial Reactors

    1.8 Growth Process

    1.9 Device Applications

    1.10 Conclusions


    2 Silicon Molecular-Beam Epitaxy

    2.1 Introduction

    2.2 Historical Perspective

    2.3 Leverage of Silicon Molecular-Beam Epitaxy

    2.4 Growth Apparatus

    2.5 Surface Preparation

    2.6 Growth

    2.7 Doping

    2.8 Defects and Quality of Silicon Films Grown by MBE

    2.9 Applications

    2.10 Future of Silicon MBE


    3 Silicon Liquid-Phase Epitaxy

    3.1 Introduction

    3.2 Historical Perspective

    3.3 Apparatus and Experimental Procedure

    3.4 Growth Kinetics and Layer Morphology

    3.5 Electrical Properties

    3.6 Technological Applications

    3.7 Application to Devices

    3.8 Synopsis


    4 Silicon-on-Sapphire Heteroepitaxy

    4.1 Introduction

    4.2 Sapphire Substrates

    4.3 Epitaxial Deposition of Silicon Films

    4.4 SOS Material Diagnostics

    4.5 SOS Device Technology

    4.6 Conclusions


    5 Silicon-on-Insulator Epitaxy

    5.1 Introduction

    5.2 Epitaxial Growth on Implanted Buried Dielectric

    5.3 Lateral Epitaxy for SOI: Liquid-Phase Process

    5.4 Lateral Epitaxy for SOI: Solid-Phase Process

    5.5 Lateral Epitaxy for SOI: Vapor-Phase Process

    5.6 Heteroepitaxy for SOI

    5.7 Summary



Product details

  • No. of pages: 336
  • Language: English
  • Copyright: © Academic Press 1986
  • Published: October 28, 1986
  • Imprint: Academic Press
  • eBook ISBN: 9780323155458

About the Editor

B Baliga

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