Epitaxial Growth Part A

1st Edition - January 1, 1975
Editor: J Matthews
Language: English
eBook ISBN:
9 7 8 - 0 - 3 2 3 - 1 5 2 1 2 - 9

Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection… Read more

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Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.

List of Contributors

Preface

Contents of Part B

Chapter 1. A Historical Review of Epitaxy

I. Introduction

II. The Impact of High-Energy Electron Diffraction

III. The Use of Transmission Electron Microscopy

IV. The Development of UHV Techniques

V. Summary and Discussion

References

Chapter 2. Preparation of Single-Crystal Films

2.1 Evaporation of Thin Films

I. Introduction

II. Vacuum Requirements

III. Vacuum Generation

IV. Vapor Pressure and Rate of Evaporation

V. Evaporation Sources

VI. Multicomponent Evaporation

VII. Substrates and Accessories

References

2.2 Molecular-Beam Epitaxy

I. Introduction

II. Molecular-Beam Epitaxy System

III. Vaporization of Binary Semiconductors

IV. Deposition Process

V. Experimental Results

References

2.3 Electrodeposition

I. Introduction

II. Basic Principles of Electrodeposition

III. Bath Composition, Purity, and Throwing Power

IV. Basic Plating Parameters

V. Epitaxial Growth of the Elements

VI. Deposition of Epitaxial Alloy Layers

References

2.4 Chemical Vapor Deposition

I. Introduction

II. Fundamental Considerations

III. Systems Illustrating the Principles of CVD Epitaxy

References

2.5 Growth of Epitaxial Films by Sputtering

I. Introduction

II. Sputtering and Film-Deposition Processes

III. Experimental Techniques

IV. Epitaxial Films of Metals and Alloys

V. Epitaxial Semiconductor Films

VI. Epitaxial Oxide Films

VII. Conclusions and Recommendations

References

2.6 Liquid-Phase Epitaxy

I. Introduction

II. Compound Semiconductor and Magnetic-Garnet LPE Technology

III. Garnet-Film Processing

IV. Models of Epitaxial Growth

V. Areas for Further Investigation

Symbols

References

Chapter 3. Examination of Thin Films

3.1 Studies of Thin-Film Nucleation and Growth by Transmission Electron Microscopy

I. Introduction

II. Postnucleation Transmission Electron Microscopy

III. In Situ Transmission Electron Microscopy

References

3.2 X-Ray Topography

I. Introduction

II. X-Ray Diffraction Topography

III. Applications to Thin Films

References

3.3 Low-Energy Electron Diffraction and Auger-Electron Spectroscopy

I. The Problem

II. The LEED Experiment

III. Auger-Electron Spectroscopy

IV. Studies of Epitaxy by LEED

V. Conclusions

References

3.4 High-Energy Electron Diffraction

I. Introduction

II. Diffraction Instruments

III. Analysis of Diffraction Patterns

References

3.5 X-Ray Diffraction

I. Introduction

II. Peak Position Measurements

III. Diffraction Line Profile Analyses

IV. Integrated Intensity Measurements

References

3.6 Measurement of Microstains in Thin Epitaxial Films

I. Introduction

II. Microstain Determination Techniques Not Employing Moiré Fringes

III. Moiré Fringe Techniques for Microstain Determinations

IV. Conclusion

References

Index