Epitaxial Growth Part A

Epitaxial Growth Part A

1st Edition - January 1, 1975

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  • Editor: J Matthews
  • eBook ISBN: 9780323152129

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Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.

Table of Contents

  • List of Contributors


    Contents of Part B

    Chapter 1. A Historical Review of Epitaxy

    I. Introduction

    II. The Impact of High-Energy Electron Diffraction

    III. The Use of Transmission Electron Microscopy

    IV. The Development of UHV Techniques

    V. Summary and Discussion


    Chapter 2. Preparation of Single-Crystal Films

    2.1 Evaporation of Thin Films

    I. Introduction

    II. Vacuum Requirements

    III. Vacuum Generation

    IV. Vapor Pressure and Rate of Evaporation

    V. Evaporation Sources

    VI. Multicomponent Evaporation

    VII. Substrates and Accessories


    2.2 Molecular-Beam Epitaxy

    I. Introduction

    II. Molecular-Beam Epitaxy System

    III. Vaporization of Binary Semiconductors

    IV. Deposition Process

    V. Experimental Results


    2.3 Electrodeposition

    I. Introduction

    II. Basic Principles of Electrodeposition

    III. Bath Composition, Purity, and Throwing Power

    IV. Basic Plating Parameters

    V. Epitaxial Growth of the Elements

    VI. Deposition of Epitaxial Alloy Layers


    2.4 Chemical Vapor Deposition

    I. Introduction

    II. Fundamental Considerations

    III. Systems Illustrating the Principles of CVD Epitaxy


    2.5 Growth of Epitaxial Films by Sputtering

    I. Introduction

    II. Sputtering and Film-Deposition Processes

    III. Experimental Techniques

    IV. Epitaxial Films of Metals and Alloys

    V. Epitaxial Semiconductor Films

    VI. Epitaxial Oxide Films

    VII. Conclusions and Recommendations


    2.6 Liquid-Phase Epitaxy

    I. Introduction

    II. Compound Semiconductor and Magnetic-Garnet LPE Technology

    III. Garnet-Film Processing

    IV. Models of Epitaxial Growth

    V. Areas for Further Investigation



    Chapter 3. Examination of Thin Films

    3.1 Studies of Thin-Film Nucleation and Growth by Transmission Electron Microscopy

    I. Introduction

    II. Postnucleation Transmission Electron Microscopy

    III. In Situ Transmission Electron Microscopy


    3.2 X-Ray Topography

    I. Introduction

    II. X-Ray Diffraction Topography

    III. Applications to Thin Films


    3.3 Low-Energy Electron Diffraction and Auger-Electron Spectroscopy

    I. The Problem

    II. The LEED Experiment

    III. Auger-Electron Spectroscopy

    IV. Studies of Epitaxy by LEED

    V. Conclusions


    3.4 High-Energy Electron Diffraction

    I. Introduction

    II. Diffraction Instruments

    III. Analysis of Diffraction Patterns


    3.5 X-Ray Diffraction

    I. Introduction

    II. Peak Position Measurements

    III. Diffraction Line Profile Analyses

    IV. Integrated Intensity Measurements


    3.6 Measurement of Microstains in Thin Epitaxial Films

    I. Introduction

    II. Microstain Determination Techniques Not Employing Moiré Fringes

    III. Moiré Fringe Techniques for Microstain Determinations

    IV. Conclusion



Product details

  • No. of pages: 400
  • Language: English
  • Copyright: © Academic Press 1975
  • Published: January 1, 1975
  • Imprint: Academic Press
  • eBook ISBN: 9780323152129

About the Editor

J Matthews

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