Description

Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.

Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.

With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field.

Key Features

  • Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits
  • Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration
  • Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure

Readership

Materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field.

Table of Contents

Contributor contact details

Part I: Introduction

Chapter 1: Modeling of electromigration phenomena

Abstract:

1.1 Introduction

1.2 Analytical methods

1.3 Numerical methods

1.4 Conclusion

Chapter 2: Modeling electromigration using the peridynamics approach

Abstract:

2.1 Introduction

2.2 Previous approaches to modeling electromigration (EM)

2.3 Peridynamics (PD)

2.4 PD and EM

2.5 Illustrative example

2.6 Computational requirements: present and future

2.7 Conclusions

Chapter 3: Modeling, simulation, and X-ray microbeam studies of electromigration

Abstract:

3.1 Introduction

3.2 Modeling and simulation approaches

3.3 Experimental, modeling and simulation findings

3.4 Conclusions

3.5 Acknowledgments

Part II: Electromigration in copper interconnects

Chapter 4: X-ray microbeam analysis of electromigration in copper interconnects

Abstract:

4.1 Introduction

4.2 Samples and X-ray microdiffraction methods

4.3 Electromigration (EM)-induced strains in conductor lines

4.4 Conclusions and summary

4.6 Appendix

Chapter 5: Voiding in copper interconnects during electromigration

Abstract:

5.1 Introduction

5.2 Void nucleation

5.3 Void growth

5.4 Immortality

5.5 Future trends

5.6 Acknowledgements

Chapter 6: The evolution of microstructure in copper interconnects during electromigration

Abstract:

6.1 Introduction

6.2 Copper microstructure evolution during electromigration

6.3 Plasticity and materials degradation mechanisms in copper interconnects

6.4 Implications for the reliability of advanced copper interconnect schemes

6.5 Conclusions and future trends

Chapter 7: Scaling effects on electromigration reliability of

Details

No. of pages:
352
Language:
English
Copyright:
© 2011
Published:
Imprint:
Woodhead Publishing
Electronic ISBN:
9780857093752
Print ISBN:
9781845699376
Print ISBN:
9780081016961

About the editor

Choong-Un Kim

Choong-Un Kim is Professor of Materials Science and Engineering at the University of Texas at Arlington, USA.