Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

1st Edition - May 22, 1997

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  • Editors: Constantinos Christofides, Gerard Ghibaudo
  • eBook ISBN: 9780080864433

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Description

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Key Features

  • Provides basic knowledge of ion implantation-induced defects
  • Focuses on physical mechanisms of defect annealing
  • Utilizes electrical, physical, and optical characterization tools for processed semiconductors
  • Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Readership

Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics

Table of Contents

  • Optical Characterization
    M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis
    A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors
    A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing

    Thermal Wave Analyses
    C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects
    U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films
    A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors

    Quantum Well Structures and Compound Systems
    R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures
    A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors

Product details

  • No. of pages: 316
  • Language: English
  • Copyright: © Academic Press 1997
  • Published: May 22, 1997
  • Imprint: Academic Press
  • eBook ISBN: 9780080864433

About the Serial Volume Editors

Constantinos Christofides

Affiliations and Expertise

University of Cyprus

Gerard Ghibaudo

Affiliations and Expertise

Labaratoire de Physique des Composants a Semiconducteur

About the Serial Editors

Robert Willardson

Affiliations and Expertise

WILLARDSON CONSULTING SPOKANE, WASHINGTON

Eicke Weber

Affiliations and Expertise

Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

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