
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Description
Key Features
- Provides basic knowledge of ion implantation-induced defects
- Focuses on physical mechanisms of defect annealing
- Utilizes electrical, physical, and optical characterization tools for processed semiconductors
- Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Readership
Table of Contents
Optical Characterization
M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis
A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors
A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of AnnealingThermal Wave Analyses
C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects
U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films
A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in SemiconductorsQuantum Well Structures and Compound Systems
R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures
A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors
Product details
- No. of pages: 316
- Language: English
- Copyright: © Academic Press 1997
- Published: May 22, 1997
- Imprint: Academic Press
- eBook ISBN: 9780080864433
About the Serial Volume Editors
Constantinos Christofides
Affiliations and Expertise
Gerard Ghibaudo
Affiliations and Expertise
About the Serial Editors
Robert Willardson
Affiliations and Expertise
Eicke Weber
Affiliations and Expertise
Ratings and Reviews
There are currently no reviews for "Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization"