Doherty Power Amplifiers - 1st Edition - ISBN: 9780128098677

Doherty Power Amplifiers

1st Edition

From Fundamentals to Advanced Design Methods

Authors: Bumman Kim
Hardcover ISBN: 9780128098677
Imprint: Academic Press
Published Date: 1st May 2018
Page Count: 350
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Description

Presenting both the fundamentals and advanced design techniques of Doherty Power Amplifiers technology, this book is a great resource for RF and Microwave engineers and graduate students who want to understand and implement the technology into future base station and mobile handset systems

The book introduces the very basic operational principles of the Doherty Amplifier and its non- ideal behaviours based on a transistor. The different transconductance requirements for carrier and peaking amplifiers, reactive element effect, and knee voltage effect are described. Several methods to correct the imperfections are introduced, such as uneven input drive, gate bias adaptation, dual input drive, and the offset line technique.

Advanced design methods of Doherty Amplifiers are explained and include multistage/multiway Doherty power amplifiers - which can enhance the efficiency of the amplification of a highly-modulated signal - signal tracking operation which increases the dynamic range, highly efficient saturated amplifiers, and broadband amplifiers. The Doherty amplifier on a chip for handset applications is also covered.

Learn:

  • The operational principles of the Doherty Power Amplifier as well as design techniques
  • The linear operation of Doherty power amplifiers
  • How to optimize the design of a Doherty Amplifier

Key Features

  • The first book specifically written on the Doherty Power Amplifier by the world’s leading expert, providing an in-depth presentation of principles and design techniques
  • Detailed analysis on correcting non-ideal behaviors of Doherty Power Amplifiers
  • Presents advanced Doherty Power Amplifier architectures

Readership

University and industry engineers in RF and microwave engineering, graduate students

Table of Contents

Chapter I Introduction to Doherty Power Amplifier

  1. Basic Operation Principle

    1. Load modulation
    2. a) Series modulation

      b) Parallel modulation

    3. Power Combining, Efficiency and Gain Characteristics of Doherty Amplifier
    4. Harmonic Cancellation for Linearity

2.    Basic Design Principle

1) Device model and problem for realization

2) Offset line technique for Doherty amplifier realization

3) Real impedance realization

Chapter II Enhanced Doherty Power Amplifier

  1. Correction for Lower Current of the Peaking Amplifier

    1. Uneven Drive through Coupler
    2. Direct Uneven Drive Using Device Characteristics
    3. Gate Bias Adaptation to compensate the Low Current of Peaking Amplifier

  1. Knee Voltage Effect on Doherty Amplifier Operation
  2. Doherty amplifier with Asymmetric Vds
  3. Dual Input Doherty Amplifier to Correct Doherty Network Imperfection
  4. Optimized design of carrier and peaking amplifiers

Chapter III Advanced Doherty Power Amplifier

1.    Multi-way Doherty Amplifier 

2.    Multi-stage Doherty Amplifier

3.    Signal Tracking Operation of Doherty Amplifier

1) Envelope Tracking

2) Average Power Tracking

4.    Saturated Doherty Amplifier

5. Broadband Doherty Amplifier

6. Handset Doherty Amplifier

Details

No. of pages:
350
Language:
English
Copyright:
© Academic Press 2018
Published:
Imprint:
Academic Press
Hardcover ISBN:
9780128098677

About the Author

Bumman Kim

Bumman Kim (M'78–SM'97–F'07) received the Ph.D. degree in electrical engineering from Carnegie Mellon University, Pittsburgh, PA, in 1979. In 1981, he joined the Central Research Laboratories, Texas Instruments Incorporated, where he was involved in development of GaAs power field-effect transistors (FETs) and monolithic microwave integrated circuits (MMICs). He has developed a large-signal model of a power FET, dual-gate FETs for gain control, high-power distributed amplifiers, and various millimeter-wave MMICs. In 1989, he joined the Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk, Korea, where he is a POSTECH Fellow and a Namko Professor with the Department of Electrical Engineering, and Director of the Microwave Application Research Center. He is involved in device and circuit technology for RF integrated circuits (RFICs) and PAs. He has authored over 300 technical papers. Prof. Kim is a member of the Korean Academy of Science and Technology and the National Academy of Engineering of Korea. He was an associate editor for the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. He was a Distinguished Lecturer of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) and an IEEE MTT-S Administrative Committee (AdCom) member.

Affiliations and Expertise

Pohang University of Science and Technology (POSTECH), Korea