Dilute Nitride Semiconductors - 1st Edition - ISBN: 9780080445021, 9780080455990

Dilute Nitride Semiconductors

1st Edition

Authors: Mohamed Henini
Hardcover ISBN: 9780080445021
eBook ISBN: 9780080455990
Imprint: Elsevier Science
Published Date: 15th December 2004
Page Count: 640
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Description

  • Preface
  • Chapter 1: MBE Growth and Characterization of Long Wavelength Dilute Nitride III–V Alloys
    • Publisher Summary
    • 1.1 INTRODUCTION
    • 1.2 MBE GROWTH OF DILUTE III-V NITRIDES
    • 1.3 DILUTE NITRIDE CHARACTERIZATION
    • 1.4 ENERGY BAND AND CARRIER TRANSPORT PROPERTIES
    • 1.5 ANNEALING AND N-In NEAREST NEIGHBOR EFFECTS
    • 1.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 2: Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy
    • Publisher Summary
    • 2.1 INTRODUCTION
    • 2.2 EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES
    • 2.3 LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES
    • 2.4 CONCLUSION
    • ACKNOWLEDGEMENTS
  • Chapter 3: The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors
    • Publisher Summary
    • 3.1 INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS
    • 3.2 THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS
    • 3.3 CBE OF DILUTE NITRIDE SEMICONDUCTORS
    • 3.4 FUNDAMENTAL STUDIES OF GaNxAs(1_x) BAND STRUCTURE
    • 3.5 THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE
    • 3.6 CBE-GROWN DILUTE NITRIDE DEVICES
    • 3.7 THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES
    • 3.8 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 4: MOMBE Growth and Characterization of III–V-N Compounds and Application to InAs Quantum Dots
    • ABSTRACT
    • 4.1 INTRODUCTION
    • 4.2 MOMBE GROWTH AND CHARACTERIZATION OF GaAsN
    • 4.3 RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs
    • 4.4 GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY
    • 4.5 APPLICATION OF GaAsN TO InAs QUANTUM DOTS
    • 4.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 5: Recent Progress in Dilute Nitride Quantum Dots
    • Publisher Summary
    • 5.1 SELF-ORGANIZED QUANTUM DOTS
    • 5.2 DILUTE NITRIDE QUANTUM DOTS
    • 5.3 RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs
    • 5.4 OTHER KINDS OF DILUTE NITRIDE QDs
    • 5.5 SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDs
    • ACKNOWLEDGEMENTS
  • Chapter 6: Physics of Isoelectronic Dopants in GaAs
    • Publisher Summary
    • 6.1 NITROGEN ISOELECTRONIC IMPURITIES
    • 6.2 THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION
    • 6.3 PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES
    • 6.4 ELECTROREFLECTANCE STUDY OF GaAsN
    • 6.5 RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES
    • 6.6 COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS
    • 6.7 A COMPLEMENTARY ALLOY: GaAsBi
    • 6.8 SUMMARY
    • 6.9 CONCLUSION
  • Chapter 7: Measurement of Carrier Localization Degree, Electron Effective Mass, and Excition Size in InxGa1−xAs1−yNy Alloys
    • ABSTRACT
    • 7.1 INTRODUCTION
    • 7.2 EXPERIMENTAL
    • 7.3 SINGLE CARRIER LOCALIZATION IN InxGa1-xAs1-yNy
    • 7.4 MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE
    • 7.5 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 8: Probing the “Unusual” Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques
    • Publisher Summary
    • 8.1 INTRODUCTION
    • 8.2 RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES
    • 8.3 MAGNETO-TUNNELLING SPECTROSCOPY TO PROBE THE CONDUCTION BAND STRUCTURE OF DILUTE NITRIDES
    • 8.4 ELECTRONIC PROPERTIES: FROM THE VERY DILUTE REGIME (~0.1%) TO THE DILUTE REGIME
    • 8.5 CONDUCTION IN DILUTE NITRIDES AND FUTURE PROSPECTS
    • 8.6 SUMMARY AND CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 9: Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional Structures
    • Publisher Summary
    • 9.1 PRINCIPLES OF ELECTROMODULATION IN ELECTRO- AND PHOTO-REFLECTANCE SPECTROSCOPY
    • 9.2 BAND STRUCTURE OF (Ga,In)(As,Sb,N) BULK-LIKE LAYERS
    • 9.3 (Ga,In)(As,Sb,N)-BASED QUANTUM WELL STRUCTURES
    • 9.4 THE INFLUENCE OF POST-GROWN ANNEALING ON GaInNAs STRUCTURES
    • 9.5 PHOTOREFLECTANCE INVESTIGATION OF THE EXCITON BINDING ENERGY
    • 9.6 MANIFESTATION OF THE CARRIER LOCALIZATION EFFECT IN PHOTOREFLECTANCE SPECTROSCOPY
  • Chapter 10: Band Anticrossing and Related Electronic Structure in III-N-V Alloys
    • Publisher Summary
    • 10.1 INTRODUCTION
    • 10.2 BAND ANTICROSSING MODEL
    • 10.3 EXPERIMENTAL EVIDENCE OF BAND SPLITTING AND ANTICROSSING CHARACTERISTICS
    • 10.4 NOVEL ELECTRONIC AND TRANSPORT PROPERTIES OF III-N-V ALLOYS
    • 10.5 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 11: A Tight-Binding Based Analysis of the Band Anti-Crossing Model and Its Application in Ga(In)NAs Alloys
    • ABSTRACT
    • 11.1 INTRODUCTION
    • 11.2 NITROGEN RESONANT STATES IN ORDERED CaNxAs1-x STRUCTURES
    • 11.3 ANALYTICAL MODEL FOR QUANTUM WELL CONFINED STATE ENERGIES AND DISPERSION
    • 11.4 INFLUENCE OF DISORDER ON NITROGEN RESONANT STATES, E- AND E+ IN GaNxAs1-x
    • 11.5 CONDUCTION BAND STRUCTURE AND EFFECTIVE MASS IN DISORDERED GaNxAs1-x
    • 11.6 ALLOY SCATTERING AND MOBILITY IN DILUTE NITRIDE ALLOYS
    • 11.7 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 12: Electronic Structure Evolution of Dilute III–V Nitride Alloys
    • Publisher Summary
    • 12.1 INTRODUCTION
    • 12.2 PHENOMENOLOGY OF DILUTE III-V NITRIDES
    • 12.3 EMPIRICAL PSEUDOPOTENTIAL METHODOLOGY
    • 12.4 ELECTRONIC STRUCTURE EVOLUTION OF DILUTE NITRIDES
    • 12.5 SUMMARY OF ELECTRONIC STRUCTURE EVOLUTION
    • 12.6 PHENOMENOLOGY OF DILUTE NITRIDE QUATERNARIES
    • 12.7 FUTURE CHALLENGES OF NEW NITRIDE MATERIALS
    • 12.8 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 13: Theory of Nitrogen-Hydrogen Complexes in N-Containing III–V Alloys
    • Publisher Summary
    • 13.1 INTRODUCTION
    • 13.2 THEORETICAL METHODS
    • 13.3 N-H COMPLEXES IN GaAsN ALLOYS
    • 13.4 INTRINSIC N AND H IMPURITIES IN GaP AND GaAs
    • 13.5 N-H COMPLEXES IN InGaAsN
    • 13.6 N-H COMPLEXES IN GaPN
    • 13.7 CONCLUSIONS
  • Chapter 14: Dislocation-free III–V-N Alloy Layers on Si Substrates and Their Device Applications
    • ABSTRACT
    • 14.1 INTRODUCTION
    • 14.2 DISLOCATION GENERATION MECHANISMS IN LATTICE-MISMATCHED HETEROEPITAXY
    • 14.3 LATTICE-MATCHED HETEROEPITAXY OF III-V-N ALLOYS ON III-V COMPOUND SEMICONDUCTORS
    • 14.4 GROWTH OF DISLOCATION-FREE III-V-N ALLOY LAYERS ON Si SUBSTRATES
    • 14.5 DEVICE APPLICATIONS
    • 14.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 15: GaNAsSb Alloy and its Potential for Device Applications
    • ABSTRACT
    • 15.1 INTRODUCTION
    • 15.2 MBE OF THE GaNAsSb ALLOY
    • 15.3 BANDS
    • 15.4 ANNEALING EFFECT
    • 15.5 QUINARY ALLOY
    • 15.6 LONG-WAVELENGTH GaAs-BASED LASER
    • 15.7 HBT
    • 15.8 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 16: A Comparative Look at 1.3 μm InGaAsN-based VCSELs for Fiber-optical Communication Systems
    • ABSTRACT
    • 16.1 INTRODUCTION: 0.85 μm VERSUS 1.3 μm VCSELs
    • 16.2 APPROACHES TO ACHIEVE 1.3 μm VCSELs
    • 16.4 OUTLOOK
    • 16.5 CONCLUSION
    • ACKNOWLEDGEMENTS
  • Chapter 17: Long-wavelength Dilute Nitride—Antimonide Lasers
    • Publisher Summary
    • 17.1 INTRODUCTION
    • 17.2 EPITAXIAL GROWTH SYSTEMS: MOVPE AND MBE
    • 17.3 ION DAMAGE AND ANNEALING BEHAVIOR
    • 17.4 GaInNAsSb EDGE-EMITTING LASERS
    • 17.4.4.4 Above Threshold Parameters
    • 17.5 SPONTANEOUS EMISSION STUDIES
    • 17.6 GaInNAsSb VCSELs
    • 17.7 HIGH POWER LASERS BASED ON GaInNAs(Sb)
    • 17.8 RELATIVE INTENSITY NOISE
    • 17.9 GaInNAsSb ELECTROABSORPTION MODULATORS AND SATURABLE ABSORBERS
    • 17.10 LASER RELIABILITY
    • 17.11 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 18: Application of Dilute Nitride Materials to Heterojunction Bipolar Transistors
    • ABSTRACT
    • 18.1 INTRODUCTION
    • 18.2 DESIGN CONSIDERATIONS FOR GaInNAs BASE HBTs
    • 18.3 MATERIAL GROWTH AND DEVICE PROCESSING
    • 18.4 GaInNAs HBT RESULTS
    • 18.5 CIRCUIT APPLICATIONS FOR GaInNAs HBTs
    • 18.6 FUTURE OUTLOOK
    • ACKNOWLEDGEMENTS
  • Index

Key Features

  • This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

  • It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas

  • Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

Readership

Post-graduate students, researchers in the field of semiconductors and Optoelectronics and electronic devices and semiconductor manufacturers,

Table of Contents

  • Preface
  • Chapter 1: MBE Growth and Characterization of Long Wavelength Dilute Nitride III–V Alloys
    • Publisher Summary
    • 1.1 INTRODUCTION
    • 1.2 MBE GROWTH OF DILUTE III-V NITRIDES
    • 1.3 DILUTE NITRIDE CHARACTERIZATION
    • 1.4 ENERGY BAND AND CARRIER TRANSPORT PROPERTIES
    • 1.5 ANNEALING AND N-In NEAREST NEIGHBOR EFFECTS
    • 1.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 2: Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy
    • Publisher Summary
    • 2.1 INTRODUCTION
    • 2.2 EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES
    • 2.3 LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES
    • 2.4 CONCLUSION
    • ACKNOWLEDGEMENTS
  • Chapter 3: The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors
    • Publisher Summary
    • 3.1 INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS
    • 3.2 THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS
    • 3.3 CBE OF DILUTE NITRIDE SEMICONDUCTORS
    • 3.4 FUNDAMENTAL STUDIES OF GaNxAs(1_x) BAND STRUCTURE
    • 3.5 THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE
    • 3.6 CBE-GROWN DILUTE NITRIDE DEVICES
    • 3.7 THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES
    • 3.8 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 4: MOMBE Growth and Characterization of III–V-N Compounds and Application to InAs Quantum Dots
    • ABSTRACT
    • 4.1 INTRODUCTION
    • 4.2 MOMBE GROWTH AND CHARACTERIZATION OF GaAsN
    • 4.3 RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs
    • 4.4 GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY
    • 4.5 APPLICATION OF GaAsN TO InAs QUANTUM DOTS
    • 4.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 5: Recent Progress in Dilute Nitride Quantum Dots
    • Publisher Summary
    • 5.1 SELF-ORGANIZED QUANTUM DOTS
    • 5.2 DILUTE NITRIDE QUANTUM DOTS
    • 5.3 RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs
    • 5.4 OTHER KINDS OF DILUTE NITRIDE QDs
    • 5.5 SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDs
    • ACKNOWLEDGEMENTS
  • Chapter 6: Physics of Isoelectronic Dopants in GaAs
    • Publisher Summary
    • 6.1 NITROGEN ISOELECTRONIC IMPURITIES
    • 6.2 THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION
    • 6.3 PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES
    • 6.4 ELECTROREFLECTANCE STUDY OF GaAsN
    • 6.5 RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES
    • 6.6 COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS
    • 6.7 A COMPLEMENTARY ALLOY: GaAsBi
    • 6.8 SUMMARY
    • 6.9 CONCLUSION
  • Chapter 7: Measurement of Carrier Localization Degree, Electron Effective Mass, and Excition Size in InxGa1−xAs1−yNy Alloys
    • ABSTRACT
    • 7.1 INTRODUCTION
    • 7.2 EXPERIMENTAL
    • 7.3 SINGLE CARRIER LOCALIZATION IN InxGa1-xAs1-yNy
    • 7.4 MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE
    • 7.5 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 8: Probing the “Unusual” Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques
    • Publisher Summary
    • 8.1 INTRODUCTION
    • 8.2 RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES
    • 8.3 MAGNETO-TUNNELLING SPECTROSCOPY TO PROBE THE CONDUCTION BAND STRUCTURE OF DILUTE NITRIDES
    • 8.4 ELECTRONIC PROPERTIES: FROM THE VERY DILUTE REGIME (~0.1%) TO THE DILUTE REGIME
    • 8.5 CONDUCTION IN DILUTE NITRIDES AND FUTURE PROSPECTS
    • 8.6 SUMMARY AND CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 9: Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional Structures
    • Publisher Summary
    • 9.1 PRINCIPLES OF ELECTROMODULATION IN ELECTRO- AND PHOTO-REFLECTANCE SPECTROSCOPY
    • 9.2 BAND STRUCTURE OF (Ga,In)(As,Sb,N) BULK-LIKE LAYERS
    • 9.3 (Ga,In)(As,Sb,N)-BASED QUANTUM WELL STRUCTURES
    • 9.4 THE INFLUENCE OF POST-GROWN ANNEALING ON GaInNAs STRUCTURES
    • 9.5 PHOTOREFLECTANCE INVESTIGATION OF THE EXCITON BINDING ENERGY
    • 9.6 MANIFESTATION OF THE CARRIER LOCALIZATION EFFECT IN PHOTOREFLECTANCE SPECTROSCOPY
  • Chapter 10: Band Anticrossing and Related Electronic Structure in III-N-V Alloys
    • Publisher Summary
    • 10.1 INTRODUCTION
    • 10.2 BAND ANTICROSSING MODEL
    • 10.3 EXPERIMENTAL EVIDENCE OF BAND SPLITTING AND ANTICROSSING CHARACTERISTICS
    • 10.4 NOVEL ELECTRONIC AND TRANSPORT PROPERTIES OF III-N-V ALLOYS
    • 10.5 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 11: A Tight-Binding Based Analysis of the Band Anti-Crossing Model and Its Application in Ga(In)NAs Alloys
    • ABSTRACT
    • 11.1 INTRODUCTION
    • 11.2 NITROGEN RESONANT STATES IN ORDERED CaNxAs1-x STRUCTURES
    • 11.3 ANALYTICAL MODEL FOR QUANTUM WELL CONFINED STATE ENERGIES AND DISPERSION
    • 11.4 INFLUENCE OF DISORDER ON NITROGEN RESONANT STATES, E- AND E+ IN GaNxAs1-x
    • 11.5 CONDUCTION BAND STRUCTURE AND EFFECTIVE MASS IN DISORDERED GaNxAs1-x
    • 11.6 ALLOY SCATTERING AND MOBILITY IN DILUTE NITRIDE ALLOYS
    • 11.7 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 12: Electronic Structure Evolution of Dilute III–V Nitride Alloys
    • Publisher Summary
    • 12.1 INTRODUCTION
    • 12.2 PHENOMENOLOGY OF DILUTE III-V NITRIDES
    • 12.3 EMPIRICAL PSEUDOPOTENTIAL METHODOLOGY
    • 12.4 ELECTRONIC STRUCTURE EVOLUTION OF DILUTE NITRIDES
    • 12.5 SUMMARY OF ELECTRONIC STRUCTURE EVOLUTION
    • 12.6 PHENOMENOLOGY OF DILUTE NITRIDE QUATERNARIES
    • 12.7 FUTURE CHALLENGES OF NEW NITRIDE MATERIALS
    • 12.8 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 13: Theory of Nitrogen-Hydrogen Complexes in N-Containing III–V Alloys
    • Publisher Summary
    • 13.1 INTRODUCTION
    • 13.2 THEORETICAL METHODS
    • 13.3 N-H COMPLEXES IN GaAsN ALLOYS
    • 13.4 INTRINSIC N AND H IMPURITIES IN GaP AND GaAs
    • 13.5 N-H COMPLEXES IN InGaAsN
    • 13.6 N-H COMPLEXES IN GaPN
    • 13.7 CONCLUSIONS
  • Chapter 14: Dislocation-free III–V-N Alloy Layers on Si Substrates and Their Device Applications
    • ABSTRACT
    • 14.1 INTRODUCTION
    • 14.2 DISLOCATION GENERATION MECHANISMS IN LATTICE-MISMATCHED HETEROEPITAXY
    • 14.3 LATTICE-MATCHED HETEROEPITAXY OF III-V-N ALLOYS ON III-V COMPOUND SEMICONDUCTORS
    • 14.4 GROWTH OF DISLOCATION-FREE III-V-N ALLOY LAYERS ON Si SUBSTRATES
    • 14.5 DEVICE APPLICATIONS
    • 14.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 15: GaNAsSb Alloy and its Potential for Device Applications
    • ABSTRACT
    • 15.1 INTRODUCTION
    • 15.2 MBE OF THE GaNAsSb ALLOY
    • 15.3 BANDS
    • 15.4 ANNEALING EFFECT
    • 15.5 QUINARY ALLOY
    • 15.6 LONG-WAVELENGTH GaAs-BASED LASER
    • 15.7 HBT
    • 15.8 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 16: A Comparative Look at 1.3 μm InGaAsN-based VCSELs for Fiber-optical Communication Systems
    • ABSTRACT
    • 16.1 INTRODUCTION: 0.85 μm VERSUS 1.3 μm VCSELs
    • 16.2 APPROACHES TO ACHIEVE 1.3 μm VCSELs
    • 16.4 OUTLOOK
    • 16.5 CONCLUSION
    • ACKNOWLEDGEMENTS
  • Chapter 17: Long-wavelength Dilute Nitride—Antimonide Lasers
    • Publisher Summary
    • 17.1 INTRODUCTION
    • 17.2 EPITAXIAL GROWTH SYSTEMS: MOVPE AND MBE
    • 17.3 ION DAMAGE AND ANNEALING BEHAVIOR
    • 17.4 GaInNAsSb EDGE-EMITTING LASERS
    • 17.4.4.4 Above Threshold Parameters
    • 17.5 SPONTANEOUS EMISSION STUDIES
    • 17.6 GaInNAsSb VCSELs
    • 17.7 HIGH POWER LASERS BASED ON GaInNAs(Sb)
    • 17.8 RELATIVE INTENSITY NOISE
    • 17.9 GaInNAsSb ELECTROABSORPTION MODULATORS AND SATURABLE ABSORBERS
    • 17.10 LASER RELIABILITY
    • 17.11 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 18: Application of Dilute Nitride Materials to Heterojunction Bipolar Transistors
    • ABSTRACT
    • 18.1 INTRODUCTION
    • 18.2 DESIGN CONSIDERATIONS FOR GaInNAs BASE HBTs
    • 18.3 MATERIAL GROWTH AND DEVICE PROCESSING
    • 18.4 GaInNAs HBT RESULTS
    • 18.5 CIRCUIT APPLICATIONS FOR GaInNAs HBTs
    • 18.6 FUTURE OUTLOOK
    • ACKNOWLEDGEMENTS
  • Index

Details

No. of pages:
640
Language:
English
Copyright:
© Elsevier Science 2005
Published:
Imprint:
Elsevier Science
eBook ISBN:
9780080455990
Hardcover ISBN:
9780080445021

About the Author

Mohamed Henini

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Affiliations and Expertise

The University of Nottingham, School of Physics and Astronomy, UK