Dilute Nitride Semiconductors

1st Edition

Authors: Mohamed Henini
Hardcover ISBN: 9780080445021
eBook ISBN: 9780080455990
Imprint: Elsevier Science
Published Date: 15th December 2004
Page Count: 640
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Description

  • This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

    It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas

    Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

    The high speed lasers operating at wavelength of 1.3 µm and 1.55 µm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.

    In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

    Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics

Key Features

  • This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

  • It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas

  • Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

Readership

Post-graduate students, researchers in the field of semiconductors and Optoelectronics and electronic devices and semiconductor manufacturers,

Table of Contents

  • Preface
  • Chapter 1: MBE Growth and Characterization of Long Wavelength Dilute Nitride III–V Alloys

    • Publisher Summary
    • 1.1 INTRODUCTION
    • 1.2 MBE GROWTH OF DILUTE III-V NITRIDES
    • 1.3 DILUTE NITRIDE CHARACTERIZATION
    • 1.4 ENERGY BAND AND CARRIER TRANSPORT PROPERTIES
    • 1.5 ANNEALING AND N-In NEAREST NEIGHBOR EFFECTS
    • 1.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 2: Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy

    • Publisher Summary
    • 2.1 INTRODUCTION
    • 2.2 EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES
    • 2.3 LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES
    • 2.4 CONCLUSION
    • ACKNOWLEDGEMENTS
  • Chapter 3: The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors

    • Publisher Summary
    • 3.1 INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS
    • 3.2 THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS
    • 3.3 CBE OF DILUTE NITRIDE SEMICONDUCTORS
    • 3.4 FUNDAMENTAL STUDIES OF GaNxAs(1_x) BAND STRUCTURE
    • 3.5 THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE
    • 3.6 CBE-GROWN DILUTE NITRIDE DEVICES
    • 3.7 THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES
    • 3.8 CONCLUSIONS
    • ACKNOWLEDGEMENTS
  • Chapter 4: MOMBE Growth and Characterization of III–V-N Compounds and Application to InAs Quantum Dots

    • ABSTRACT
    • 4.1 INTRODUCTION
    • 4.2 MOMBE GROWTH AND CHARACTERIZATION OF GaAsN
    • 4.3 RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs
    • 4.4 GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY
    • 4.5 APPLICATION OF GaAsN TO InAs QUANTUM DOTS
    • 4.6 SUMMARY
    • ACKNOWLEDGEMENTS
  • Chapter 5: Recent Progress in Dilute Nitride Quantum Dots

    • Publisher Summary
    • 5.1 SELF-ORGA

Details

No. of pages:
640
Language:
English
Copyright:
© Elsevier Science 2005
Published:
Imprint:
Elsevier Science
eBook ISBN:
9780080455990
Hardcover ISBN:
9780080445021

About the Author

Mohamed Henini

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Affiliations and Expertise

The University of Nottingham, School of Physics and Astronomy, UK