Diffusion in Crystalline Solids

Diffusion in Crystalline Solids

1st Edition - September 4, 1984

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  • Author: G E Murch
  • eBook ISBN: 9780323140300

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Diffusion in Crystalline Solids addresses some of the most active areas of research on diffusion in crystalline solids. Topics covered include measurement of tracer diffusion coefficients in solids, diffusion in silicon and germanium, atom transport in oxides of the fluorite structure, tracer diffusion in concentrated alloys, diffusion in dislocations, grain boundary diffusion mechanisms in metals, and the use of the Monte Carlo Method to simulate diffusion kinetics. This book is made up of eight chapters and begins with an introduction to the measurement of diffusion coefficients with radioisotopes. The following three chapters consider diffusion in materials of substantial technological importance such as silicon and germanium. Atomic transport in oxides of the fluorite structure is described, and diffusion in concentrated alloys, including intermetallic compounds, is analyzed. The next two chapters delve into diffusion along short-circuiting paths, focusing on the effect of diffusion down dislocations on the form of the tracer concentration profile. The book also discusses the mechanisms of diffusion in grain boundaries in metals by invoking considerable work done on grain-boundary structure. The last two chapters are concerned with computer simulation, paying particular attention to machine calculations and the Monte Carlo method. The book concludes by exploring the fundamental atomic migration process and presenting some state-of-the-art calculations for defect energies and the topology of the saddle surface. Students and researchers of material science will find this book extremely useful.

Table of Contents

  • List of Contributors



    1. The Measurement of Tracer Diffusion Coefficients in Solids

    I. Introduction

    II. Preparation of Diffusion Samples

    III. Annealing of Diffusion Samples

    IV. Sectioning and Microsectioning

    V. Counting of Radioactive Sections

    VI. Determination of D from a Penetration Plot

    VII. Conclusions


    2. Diffusion in Silicon and Germanium

    I. Introduction

    II. Basic Features of Bulk Diffusion in Crystalline Solids

    III. Self-Diffusion and Related Phenomena

    IV. Survey of Foreign-Atom Diffusion

    V. Oxidation-Influenced Diffusion of Group III and Group V Elements in Silicon

    VI. A Barrier against Vacancy-Interstitial Recombination

    VII. Diffusion of Group III and Group V Elements and Its Dependence on Doping

    VIII. Anomalous Diffusion Phenomena

    IX. Substitutional-Interstitial Interchange Diffusion and Application to Gold and Nickel in Silicon and to Copper in Germanium

    X. Concluding Remarks


    3. Atom Transport in Oxides of the Fluorite Structure

    I. Introduction

    II. Diffusion Studies

    III. Conductivity and Relaxation

    IV. Comparison of Ionic Conductivity and Oxygen Diffusion


    4. Tracer Diffusion in Concentrated Alloys

    I. Introduction

    II. Theoretical Background

    III. Empirical Rules

    IV. Theoretical Considerations of the Kinetics of Diffusion in Random Alloys

    V. Tracer Diffusion Experiments in Primary (Terminal) Phases

    VI. Theoretical Considerations of Diffusion in Ordered Structures

    VII. Tracer Diffusion Experiments in Intermediate Phases

    VIII. Conclusions


    5. The Mathematical Analysis of Diffusion in Dislocations

    I. Introduction

    II. The Dislocation Model

    III. Solutions of the Diffusion Equations

    IV. Properties of the Solutions

    Appendix A. Derivation of Eq. (39)

    Appendix B. The Poles of Eq. (39) for the Case of the Dislocation Array

    Appendix C. Numerical Considerations in the Calculation of Q{η, ε/α)

    Appendix D. Numerical Considerations in the Calculation of Q(η)

    Appendix E. An Order of Magnitude Estimate of Δ


    6. Grain Boundary Diffusion Mechanisms in Metals

    I. Introduction

    II. The Diffusion Spectrum

    III. Present Knowledge of the Structure of Grain Boundaries and Their Line and Point Defects

    IV. Review of Experiments Relevant to the Atom Jumping Mechanism in Boundaries

    V. Model for Atom Jumping in Boundaries

    VI. Influence of Boundary Structure on Boundary Diffusion

    VII. Diffusion along Migrating Boundaries

    VIII. Model for Grain Boundaries as Point Defect Sources and Sinks and Comparison with Experimental Observations

    IX. Conclusions

    References 37

    7. Simulation of Diffusion Kinetics with the Monte Carlo Method

    I. Introduction

    II. Tracer Diffusion

    III. Ionic Conductivity

    IV. Chemical Diffusion

    V. Conclusions


    8. Defect Calculations beyond the Harmonic Model

    I. Introduction

    II. Lattice Dynamics

    III. Vacancy Formation in fee Lennard-Jones Crystals

    IV. Vacancy Migration

    V. Analytical Treatment of Anharmonic Jump Frequency

    VI. Conclusions



Product details

  • No. of pages: 482
  • Language: English
  • Copyright: © Academic Press 1984
  • Published: September 4, 1984
  • Imprint: Academic Press
  • eBook ISBN: 9780323140300

About the Author

G E Murch

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