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Deep Implants: Fundamentals and Applications - 1st Edition - ISBN: 9780444873323, 9780444596376

Deep Implants: Fundamentals and Applications, Volume 3

1st Edition

Editors: G.G. Bentini A. Golanski S. Kalbitzer
eBook ISBN: 9780444596376
Imprint: North Holland
Published Date: 1st January 1989
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Table of Contents

The &dgr; doping layer: Electronic properties and device perspectives (F. Koch, A. Zrenner). Future very-large-scale integration technology (M. Hirose). High temperature superconducting ceramics (C.J. Humphreys, D.J. Eaglesham). Megaelectronvolt implantations in silicon very-large-scale integration (A.N. Saxena, D. Pramanik). High energy implanted transistor fabrication (J. Middelhoek). Dynamic computer simulation of high energy ion implantation (W. Möller). Lupin-3D: a three-dimensional calculation of damage energy distribution and cascade parameters for ion-implanted materials (C. Vieu et al.). Monte Carlo simulations of ion implantation in crystalline targets (A.M. Mazzone). Interaction of megaelectronvolt ion beams with silicon: amorphization, recrystallization and diffusion (J.M. Poate). Depth distributions of megaelectronvolt 14N implanted into various solids at elevated fluences (D. Fink et al.). Experimental and calculated range moments of deep implants (M. Weiser et al.). Depth profiles and damage annealing of 1.06 MeV AS2+ implanted in silicon (A. Armigliato et al.). Implants of 15-50 MeV boron ions into silicon (A. La Ferla et al.). Proton-irradiated silicon: complete electrical characterization of the induced dominant deep defects after long-term annealing (M.W. Huppi). A study of the distribution of hydrogen and strain in proton-bombarded liquid-encapsulated Czochralski-grown GaAs by double-crystal X-ray diffraction and secondary ion mass spectrometry (G.T. Brown et al.). Comparison between intermediate'' - andheavy'' - ion-bombardment-induced silicon amorphization at room temperature (A. Claverie et al.). Electronic properties of defects created by 1.6 GeV argon ions in silicon (J. Krynicki et al.). Current status of the technology of silicon separated by implantation of oxygen (H. Baumgart, A.H. Van Ommen). A silicon on insulator structure formed by implantation of megaelectronvolt oxygen (J.J. Grob et al.). Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry (M. Fried et al.). Deep implants by channeling implantation (R.J. Schreutelkamp et al.). Lattice damage and silicide formation by deep implantations into silicon (E.H. te Kaat et al.). Growth of buried silicon nitride layers induced by fast thermal annealing of N2+-implanted silicon substrates (T. Chamas et al.). Piezoresistive properties under hydrostatic pressure of silicon layers separated by oxygen implantation (F. Vettesse et al.). Modifications by rare gas bombardment of aluminium nitride formed by direct implantation (S. Lucas et al.). Nitrogen implantation into metals: a numerical model to explain the high temperature shape of the nitrogen depth profile (M. Piette et al.). Temperature and dose dependences of nitrogen implantation into iron (G. Terwagne et al.). Investigation of the Ag-Si interface formed under simultaneous irradiation using a high energy ion beam (J. Budinavicius et al.). Thermal wave characterization of silicon which had been high energy ion implanted and furnace annealed (G.M. Crean et al.). An approach to a new machine design for implantation at medium and high energies (S. Bliman). ARAMIS: an accelerator for research on astrophysics, microanalysis and implantation in solids (E. Cottereau et al.). Linear-accelerator-based high energy implanter with milliampere capability (P. Boisseau et al.). Design study of high energy, high current, r.f. accelerators for ion implantation (R.W. Thomae et al.). The dynamitron tandem accelerator - a useful tool for ion beam applications (K. Brand). Features and applications of a versatile megavolt ion accelerator (W.A. Koelewijn et al.). Megaelectronovolt implants into GaAs using a hot-cathode Penning ion source (R.M. Gwilliam et al.). Subject Index. Author Index.


Deep implants are produced by the high-energy implantation of impurities in a host material. The thus created subsurface layers have properties that are different from the very surface and the bulk and show great promise for application in the electronics industry.


© North Holland 1989
1st January 1989
North Holland
eBook ISBN:


@qu:...should be studied carefully by all involved in ion implantation... @source:Nuclear Instruments and Methods in Physics Research @qu:...reflects the vitality of an emerging research field... @source:MRS Bulletin

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About the Editors

G.G. Bentini

A. Golanski

S. Kalbitzer