Control of Semiconductor Interfaces - 1st Edition - ISBN: 9780444818898, 9781483290485

Control of Semiconductor Interfaces

1st Edition

Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8-12 November, 1993

Editors: I. Ohdomari M. Oshima A. Hiraki
eBook ISBN: 9781483290485
Imprint: Elsevier Science
Published Date: 16th May 1994
Sales tax will be calculated at check-out Price includes VAT/GST
Price includes VAT/GST

Institutional Subscription

Secure Checkout

Personal information is secured with SSL technology.

Free Shipping

Free global shipping
No minimum order.


This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization.

A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.

Table of Contents

(Please contact the publisher for a complete list of contents.) Preface. Parts 1. Plenary (2 papers). 2. Metal/silicon (8 papers). 3. Semiconductor hetero-interface (8 papers). 4. Characterization (I) (4 papers). 5. Semiconducting new materials (6 papers). 6. Metal/compound semiconductor (7 papers). 7. SiO2/Si (6 papers). 8. Characterization (II) (4 papers). 9. Insulator/semiconductor (8 papers). 10. Characterization (III) (6 papers). 11. Interface in device (4 papers). 12. Control of interface formation: Si (7 papers). 13. Control of interface properties: Si (3 papers). 14. Contact metallization: Si (2 papers). 15. Characterization: Si (5 papers). 16. Control of interface formation: compound semiconductors (5 papers). 17. Control of interface properties: compound semiconductors (5 papers). 18. Contact metallization: compound semiconductors (8 papers). 19. Characterization: compound semiconductors (8 papers). Subject index.


© Elsevier Science 1994
Elsevier Science
eBook ISBN:

About the Editor

I. Ohdomari

Affiliations and Expertise

Waseda University, Tokyo, Japan

M. Oshima

Affiliations and Expertise

NTT Laboratories, Tokyo, Japan

A. Hiraki

Affiliations and Expertise

Osaka University, Osaka, Japan

Ratings and Reviews