Comprehensive Semiconductor Science and Technology, Six-Volume Set

1st Edition

Editor-in-Chiefs: Pallab Bhattacharya Roberto Fornari Hiroshi Kamimura
Hardcover ISBN: 9780444531438
eBook ISBN: 9780080932286
Imprint: Elsevier Science
Published Date: 28th January 2011
Page Count: 3608
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Description

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world.

 

The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us.

Key Features

  • Provides a comprehensive global picture of the semiconductor world

  • Each of the work's three sections presents a complete description of one aspect of the whole

  • Written and Edited by a truly international team of experts

Readership

Faculty, Scientists, Researchers and Graduate Students in Physics, Materials Science, (Bio)Chemistry or Engineering Departments at universities worldwide.
Additional relevant fields of research include: Optoelectronics, Condensed Matter Science, Surface Science, Magnetism and Quantum Mechanics.
Researchers in large corporations and governmental labs working with Semiconductors.

Table of Contents

Section 1: Physics and Fundamental Theory

Volume 1 - Physics and Fundamental Theory Part 1:
Electrons in semiconductors: Empirical and ab initio theories, Ab initio theories of the structural, electronic and optical properties of semiconductors: bulk crystals to nanostructures, Impurity Bands in Group-IV Semiconductors, Integer Quantum Hall Effect, Composite fermion theory of the fractional Quantum Hall Effect, Ballistic Transport in GaAs/AIGaAs Heterostructures, Spin-Hall effect: Theoretical, Thermal conduction / thermoelectric power, Electronic structures of Quantum Dots, Control over single electron spins in quantum dots, Atomic structures and electronic properties of semiconductor interfaces

Volume 2 - Physics and Fundamental Theory Part 2:
Contact hyperfine interactions in semiconductor heterostructures, Optical properties of semiconductors, Bloch oscillation and ultrafast coherent optical phenomena, Optical properties of Si Semiconductor nanocrystals, Excitons and polaritons in semiconductors, Magneto-spectroscopy of semiconductors, Microcavities of semiconductor quantum structures, Semimagnetic semiconductors, Electronic stats and properties of carbon crystalline from graphene to carbon nanotubes, Angle-Resolved Photoemission Spectroscopy of Graphen, Graphite, and Related Compounds, Theory of Superconductivity in Graphite Intercalation Compounds

Section 2: Materials, Preparation and Properties

Volume 3 - Materials, Preparation and Properties Part 1:
Crystal Growth, Molecular Beam Epitaxy, Bulk Growth of Crystals of III-V Compound Semiconductors, New Developments in Czrchralski Silicon, Growth of CdZnTe Bulk Crystal, Growth of bulk SiC with Low Defect Densities and SiC epitaxy, Growth of Bulk GaN Crystals, Growth of bulk A1N Crystals, Growth of Bulk ZnO, Organometallic Vapor Phase Growth of Group III Nitrides, ZnO epitaxial growth, Nanostructures of metal oxides

Volume 4 - Materials, Preparation and Properti

Details

No. of pages:
3608
Language:
English
Copyright:
© Elsevier Science 2011
Published:
Imprint:
Elsevier Science
Hardcover ISBN:
9780444531438
eBook ISBN:
9780080932286
eBook ISBN:
9780444531537

About the Editor-in-Chief

Pallab Bhattacharya

Pallab Bhattacharya is the Charles M. Vest Distinguished University Professor of Electrical Engineering and Computer Science and the James R. Mellor Professor of Engineering in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the M. Eng. and Ph.D. degrees from the University of Sheffield, UK, in 1976 and 1978, respectively. Professor Bhattacharya was an Editor of the IEEE Transactions on Electron Devices and is Editor-in-Chief of Journal of Physics D. He has edited Properties of Lattice-Matched and Strained InGaAs (UK: INSPEC, 1993) and Properties of III-V Quantum Wells and Superlattices (UK: INSPEC, 1996). He has also authored the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition). His teaching and research interests are in the areas of compound semiconductors, low-dimensional quantum confined systems, nanophotonics and optoelectronic integrated circuits. He is currently working on highspeed quantum dot lasers, quantum dot infrared photodetectors, photonic crystal quantum dot devices, and spin-based heterostructure devices. From 1978 to 1983, he was on the faculty of Oregon State University, Corvallis, and since 1984 he has been with the University of Michigan. He was an Invited Professor at the Ecole Polytechnic Federale de Lausanne, Switzerland, from 1981 to 1982. Professor Bhattacharya is a member of the National Academy of Engineering. He has received the John Simon Guggenheim Fellowship, the IEEE (EDS) Paul Rappaport Award, the IEEE (LEOS) Engineering Achievement Award, the Optical Society of America (OSA) Nick Holonyak Award, the SPIE Technical Achievement Award, the Quantum Devices Award of the International Symposium on Compound Semiconductors, and the IEEE (Nanotechnology Council) Nanotechnology Pioneer Award. He has also received the S.S. Attwood Award, the Kennedy Family Research Excellence Award, and the Distinguished Faculty Achievement Award from the Universi

Affiliations and Expertise

Pallab Bhattacharya, College of Engineering, University of Michigan, USA.

Roberto Fornari

Roberto Fornari studied Solid State Physics at the University of Parma, Italy. He is presently director of the Leibniz Institute for Crystal Growth (IKZ) in Berlin and holds the Chair of Crystal Growth at the Physics Dept. of the Humboldt University Berlin (joint appointment). Before moving to Germany in 2003 he has worked over twenty years as research scientist at the Institute for Electronic and Magnetic Materials (MASPEC, later IMEM) of the Italian CNR where he led different research projects on growth and thermal processing of bulk III-V semiconductors, HVPE and MOVPE of Nitrides, characterization of semiconductors by electrical and optical techniques. He has authored/co-authored about 170 scientific papers, seven patents and different book chapters. He has edited books and proceedings on crystal growth and semiconductors physics and was subject editor of the Encyclopaedia of Materials published by Pergamon Press in 2001.He is presently member of the editorial board of J.Cryst.Growth, Cryst. Res.Technol. and J. Optoelectron. Advanced. Materials. He has been Chairman of the IUCr Commission for Crystal Growth and Characterization of Materials from 1999 to 2005 and then member till 2008. From 2001 to 2007 he has been in the Executive Committee of the Intern. Org. for Crystal Growth and he presently serves as Vice-President of this organization.

Affiliations and Expertise

Roberto Fornari, Institute of Physics, humboldt University, Berlin, Germany.

Hiroshi Kamimura

Hiroshi Kamimura is currently a senior adviser of Tokyo University of Science (TUS), and a guest professor of Research Institute for Science and Technology at the TUS. He was awarded a Doctor of Science in Physics from University of Tokyo in 1959. He worked at Bell-Telephone laboratories at Murray Hill, USA as a Member of Technical Staff in 1961 to 64. In 1965 he became a lecturer, then an associate professor and a professor at Dept. of Physics, Faculty of Science in University of Tokyo. In 1974-75 he worked with Sir Nevill Mott as a guest scholar at Cavendish Laboratory in Cambridge, UK. In 1991 he retired from University of Tokyo, and then he became a professor at Dept of Applied Physics, Faculty of Science at the TUS. His interests are in the theory of condensed matter physics and of materials science, in particular semiconductor physics, high temperature superconductivity and superionic conduction. He was President of physical society of Japan in 1984-85, Chairman of IUPAP semiconductor Commission in 1985-90. He is an honorary fellow of Institute of Physics, UK, a life-fellow of American Physical Society, an emeritus professor of University of Tokyo and an emeritus professor of Tokyo University of Science.

Affiliations and Expertise

Hiroshi Kamimura, Department of Applied Physics, Tokyo University of Science, Japan.