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Characterization of Semiconductor Heterostructures and Nanostructures
1st Edition - June 3, 2008
Editors: Giovanni Agostini, Carlo Lamberti
Language: English
eBook ISBN:9780080558158
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In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and…Read more
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In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures.
Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures
Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field
Each chapter starts with a didactic introduction on the technique
The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Researchers and professors and Master and PhD students in physics, chemistry, materials science and engineering fields
1. IntroductionC. Lamberti2. Ab-initio studies of structural and electronic propertiesM. Peressi, A. Baldereschi and S. Baroni3. Electrical and optical properties of heterostructures4. Strain and composition determination in semiconducting heterostructures by high resolution X-ray diffractionC. Ferrari and C. Bocchi5. Transmission Electron Microscopy techniques for imaging and composition evaluation in Semiconductor HeterostructuresL. Lazzarini, L. Nasi and V. Grillo6. Accessing structural and electronic properties of semiconductor nanostructures via photoluminescenceS. Sanguinetti, M. Guzzi and M. Gurioli7. Power dependent cathodoluminescence in III-Nitrides heterostructures: from internal field screening to controlled band gap modulationG. Salviati, L. Lazzarini, N. Armani, F. Rossi and V. Grillo8. Raman SpectroscopyD. Wolverson9. X-ray absorption fine structure spectroscopyF. Boscherini10. Nanostructures in the light of synchrotron radiation: surface sensitive x-ray techniques and anomalous scatteringT. Metzger, J. Eymery, V. Favre-Nicolin, G. Renaud, H. Renevier and T. Schülli11. Grazing Incidence Diffraction Anomalous Fine Structure to study the structural properties of semiconductor nanostructuresM. Grazia Proietti, J. Coraux and H. Renevier12. The Role of Photoemission Spectroscopies in Heterojunction ResearchG. Margaritondo13. EPR of interfaces and nanolayers in semiconductor heterostructuresA. Stesmans and V.V. Afans'ev
No. of pages: 496
Language: English
Edition: 1
Published: June 3, 2008
Imprint: Elsevier Science
eBook ISBN: 9780080558158
GA
Giovanni Agostini
Affiliations and expertise
Department of Inorganic, Physical & Materials Chemistry, University of Torino, Italy
CL
Carlo Lamberti
Affiliations and expertise
Department of Inorganic, Physical & Materials Chemistry, University of Torino, Italy
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