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Semiconductor device applications require a reliable and precise control of the electrical and optical properties of its materials, which can be largely affected by defects and impurities. Therefore, it is of crucial importance to understand the formation of intrinsic defects and their interaction with extrinsic impurities, such as shallow dopants. Intrinsic defects are often known to form detrimental complex centers with extrinsic dopants, which limits the doping efficiency and degrades device parameters. Defects can also be used for further deliberated functionalization of semiconductors.
While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. Defects in advanced electronic materials and novel low dimensional structures fills this gap by providing a comprehensive review on recent progress in solving defect issues and also on deliberate defect engineering in such novel material systems.
The book begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects. Then, it takes a look at defects in one-dimensional and two-dimensional materials including carbon nanotubes and graphene. It examines the ways that defects can expand the potential applications of semiconductors such as energy upconversion and quantum processing. Defects in advanced electronic materials and low dimensional structures also addresses nitrogen-vacancy centers in diamond and room temperature defect engineered spintronics in dilute nitrides. The book concludes with a look at the latest advances in theory.