Basic Principles of Electronics

Basic Principles of Electronics

Volume 2: Semiconductors

1st Edition - January 1, 1971

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  • Authors: J. Jenkins, W. H. Jarvis
  • eBook ISBN: 9781483186672

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Description

Basic Principles of Electronics, Volume 2: Semiconductors focuses on the properties, applications, and characteristics of semiconductors. The publication first elaborates on conduction in the solid state, conduction and heat, and semiconductors. Discussions focus on extrinsic or impurity semiconductors, electrons and holes, effect of temperature on the conductivity, mean free path, Joule heating effect, "vacancies" in crystals, and Drude's theory of metallic conduction. The text then ponders on semiconductor technology and simple devices, transistor, and transistor production and characteristics. Topics include strain gauges, thermistors, thermoelectric semiconductors, crystal preparation, photoconductors, and the Hall effect. The book elaborates on special devices, processes, and uses, common transistor circuitry, and a low-frequency equivalent circuit for common base, including radiation detection, optoelectronics, field effect transistors, sonar amplifier, oscillators, and multi-stage amplifiers. The publication is highly recommended for technical college students and researchers wanting to study semiconductors.

Table of Contents


  • Preface

    Chapter 1. Conduction in the Solid State

    1.1. Historical

    1.2. Vacancies in Crystals

    1.3. Drude's Theory of Metallic Conduction

    1.4. The Paradox

    1.5. Mean Free Time

    Chapter 2. Conduction and Heat

    2.1. Some Kinetic Theory

    2.2. The Mean Free Path

    2.3. The Joule Heating Effect

    2.4. The Failure of Drude's Theory

    2.5. The Work of Wien

    2.6. The Modern Picture of Resistivity

    2.7. The Effect of Temperature on the Conductivity (E1)

    Chapter 3. Semiconductors

    3.1. Historical

    3.2. Classification of Materials

    3.3. Electrons and Holes

    3.4. Extrinsic or Impurity Semiconductors

    Chapter 4. Semiconductor Technology and Simple Devices

    4.1. Terminology

    4.2. Crystal Preparation

    4.3. The Materials in Use

    4.4. Photoconductors (E1)

    4.5. The Hall Effect; Magnetometers (E3)

    4.6. Thermoelectric Semiconductors (E2)

    4.7. Thermistors (E3)

    4.8. Strain Gauges (E4)

    Chapter 5. The p-n Junction

    5.1. Semiconductor Junctions

    5.2. Diffusion in a Semiconductor

    5.3. The Potential Barrier

    5.4. The p-n Junction with Forward and Reverse Bias (E1)

    5.5. The Resistance of a p-n Junction

    Chapter 6. p-n Junction Devices

    6.1. Practical Junctions

    6.1.1. The Alloy Junction

    6.1.2. The Diffused Junction

    6.1.3. Epitaxial Junctions

    6.2. Rectifiers (E1)

    6.3. Diodes

    6.3.1. The Point-Contact Diode

    6.3.2. The Gold-Bonded Diode

    6.3.3. The Junction Diode

    6.4. Comparison of p-n Junction Diodes with Thermionic Valve Diodes

    6.5. The Varactor Diode

    6.6. The Zener Diode (E3)

    6.7. Photocells (E2)

    Chapter 7. The Transistor

    7.1. The Principle of the Junction Transistor

    7.2. The Current Gain, α

    Chapter 8. Transistor Production and Characteristics

    8.1. Transistor Production

    8.1.1. The Germanium Alloy Transistor

    8.1.2. The Silicon Alloy Transistor

    8.1.3. The Germanium Alloy Power Transistor

    8.1.4. The Germanium Diffused Mesa Transistor

    8.1.5. The Silicon Diffused Mesa Transistor

    8.1.6. The Silicon Epitaxial Planar Transistor

    8.2. Transistor Characteristics

    8.2.1. Common Base Characteristics (E1)

    8.2.2. Common Emitter Characteristics (E2)

    Chapter 9. The Transistor as a Circuit Element

    9.1. A Low-Frequency Equivalent Circuit for Common Base

    9.2. Amplification in Common Base Connection (E1)

    9.3. A Low-Frequency Equivalent Circuit for Common Emitter

    9.4. The Common Emitter Amplifier (E2)

    9.4.1. The Input Resistance, Rin

    9.4.2. The Current Amplification, A1

    9.4.3. The Voltage Amplification, Av

    9.4.4. The Power Amplification, Ap

    9.4.5. The Output Resistance, Rout

    9.5. Determination of Parameters from Transistor Characteristics (E3)

    9.6. The Load Line

    9.7. Bias Circuits

    9.7.1. Fixed Bias

    9.7.2. Self Bias

    9.7.3. Stabilized Bias

    9.8. Design of a Bias Circuit

    9.9. Alternative Transistor Configurations

    Chapter 10. Common Transistor Circuitry

    10.1. Multi-Stage Amplifiers

    10.2. Power Output Stages

    10.2.1. Single-Ended Power Output Stages

    10.2.2. Double-Ended Power Output Stages

    10.2.3. Thermal Runaway; Precautions

    10.3. Tuned Amplifiers

    10.3.1. Single Tuned Amplifier Stage

    10.3.2. Double Tuned Amplifier Stage

    10.4. Oscillators

    10.4.1. Sinusoidal Oscillators (E2)

    10.4.2. Relaxation Oscillators

    10.5. The Transistor Switch (E1)

    10.5.1. Logic Circuits

    10.6. D.C. Amplifiers

    10.6.1. Directly-Coupled Circuits

    10.6.2. Chopper Circuits

    10.7. Inverters

    Chapter 11. Special Devices, Processes and Uses

    11.1. Heterojunctions

    11.2. Sonar Amplifier

    11.3. Radiation Detection

    11.4. Power Control (E1)

    11.4.1. The Thyristor (E2)

    11.5. Microwave Devices

    11.6. Opto-Electronics (E3)

    11.6.1. Light Emitting Diodes

    11.6.2. The Laser

    11.6.3. Optical Transistor

    11.6.4. Electroluminescence

    11.6.5. The Phototransistor (E4)

    11.6.6. Photo-Avalanche Diode

    11.6.7. Heterojunctions

    11.7. The Unijunction (E5)

    11.8. Field Effect Transistors

    11.8.1. The Junction Fet

    11.8.2. The Insulated Gate Fet or Metal-Oxide-Semiconductor Transistor (MOST)

    11.9. Microelectronics (E7)

    Appendixes

    I. The h-Parameters

    II. Relationship Between h and T Parameters for Common Emitter Configuration

    III. Input and Output Resistances and Gains for Grounded Emitter Transistor, in Terms of h-Parameters

    IV. Classification of Semiconductor Types

    V. Practical Precautions with Transistors

    VI. Symbols Used in the Text

    VII. Impurity Semiconductors

    Index

Product details

  • No. of pages: 264
  • Language: English
  • Copyright: © Pergamon 1971
  • Published: January 1, 1971
  • Imprint: Pergamon
  • eBook ISBN: 9781483186672

About the Authors

J. Jenkins

W. H. Jarvis

About the Editor

W. Ashhurst

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