Basic Principles of Electronics - 1st Edition - ISBN: 9780080161181, 9781483186672

Basic Principles of Electronics

1st Edition

Volume 2: Semiconductors

Authors: J. Jenkins W. H. Jarvis
Editors: W. Ashhurst
eBook ISBN: 9781483186672
Imprint: Pergamon
Published Date: 1st January 1971
Page Count: 264
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Basic Principles of Electronics, Volume 2: Semiconductors focuses on the properties, applications, and characteristics of semiconductors.

The publication first elaborates on conduction in the solid state, conduction and heat, and semiconductors. Discussions focus on extrinsic or impurity semiconductors, electrons and holes, effect of temperature on the conductivity, mean free path, Joule heating effect, "vacancies" in crystals, and Drude's theory of metallic conduction. The text then ponders on semiconductor technology and simple devices, transistor, and transistor production and characteristics. Topics include strain gauges, thermistors, thermoelectric semiconductors, crystal preparation, photoconductors, and the Hall effect.

The book elaborates on special devices, processes, and uses, common transistor circuitry, and a low-frequency equivalent circuit for common base, including radiation detection, optoelectronics, field effect transistors, sonar amplifier, oscillators, and multi-stage amplifiers.

The publication is highly recommended for technical college students and researchers wanting to study semiconductors.

Table of Contents


Chapter 1. Conduction in the Solid State

1.1. Historical

1.2. Vacancies in Crystals

1.3. Drude's Theory of Metallic Conduction

1.4. The Paradox

1.5. Mean Free Time

Chapter 2. Conduction and Heat

2.1. Some Kinetic Theory

2.2. The Mean Free Path

2.3. The Joule Heating Effect

2.4. The Failure of Drude's Theory

2.5. The Work of Wien

2.6. The Modern Picture of Resistivity

2.7. The Effect of Temperature on the Conductivity (E1)

Chapter 3. Semiconductors

3.1. Historical

3.2. Classification of Materials

3.3. Electrons and Holes

3.4. Extrinsic or Impurity Semiconductors

Chapter 4. Semiconductor Technology and Simple Devices

4.1. Terminology

4.2. Crystal Preparation

4.3. The Materials in Use

4.4. Photoconductors (E1)

4.5. The Hall Effect; Magnetometers (E3)

4.6. Thermoelectric Semiconductors (E2)

4.7. Thermistors (E3)

4.8. Strain Gauges (E4)

Chapter 5. The p-n Junction

5.1. Semiconductor Junctions

5.2. Diffusion in a Semiconductor

5.3. The Potential Barrier

5.4. The p-n Junction with Forward and Reverse Bias (E1)

5.5. The Resistance of a p-n Junction

Chapter 6. p-n Junction Devices

6.1. Practical Junctions

6.1.1. The Alloy Junction

6.1.2. The Diffused Junction

6.1.3. Epitaxial Junctions

6.2. Rectifiers (E1)

6.3. Diodes

6.3.1. The Point-Contact Diode

6.3.2. The Gold-Bonded Diode

6.3.3. The Junction Diode

6.4. Comparison of p-n Junction Diodes with Thermionic Valve Diodes

6.5. The Varactor Diode

6.6. The Zener Diode (E3)

6.7. Photocells (E2)

Chapter 7. The Transistor

7.1. The Principle of the Junction Transistor

7.2. The Current Gain, α

Chapter 8. Transistor Production and Characteristics

8.1. Transistor Production

8.1.1. The Germanium Alloy Transistor

8.1.2. The Silicon Alloy Transistor

8.1.3. The Germanium Alloy Power Transistor

8.1.4. The Germanium Diffused Mesa Transistor

8.1.5. The Silicon Diffused Mesa Transistor

8.1.6. The Silicon Epitaxial Planar Transistor

8.2. Transistor Characteristics

8.2.1. Common Base Characteristics (E1)

8.2.2. Common Emitter Characteristics (E2)

Chapter 9. The Transistor as a Circuit Element

9.1. A Low-Frequency Equivalent Circuit for Common Base

9.2. Amplification in Common Base Connection (E1)

9.3. A Low-Frequency Equivalent Circuit for Common Emitter

9.4. The Common Emitter Amplifier (E2)

9.4.1. The Input Resistance, Rin

9.4.2. The Current Amplification, A1

9.4.3. The Voltage Amplification, Av

9.4.4. The Power Amplification, Ap

9.4.5. The Output Resistance, Rout

9.5. Determination of Parameters from Transistor Characteristics (E3)

9.6. The Load Line

9.7. Bias Circuits

9.7.1. Fixed Bias

9.7.2. Self Bias

9.7.3. Stabilized Bias

9.8. Design of a Bias Circuit

9.9. Alternative Transistor Configurations

Chapter 10. Common Transistor Circuitry

10.1. Multi-Stage Amplifiers

10.2. Power Output Stages

10.2.1. Single-Ended Power Output Stages

10.2.2. Double-Ended Power Output Stages

10.2.3. Thermal Runaway; Precautions

10.3. Tuned Amplifiers

10.3.1. Single Tuned Amplifier Stage

10.3.2. Double Tuned Amplifier Stage

10.4. Oscillators

10.4.1. Sinusoidal Oscillators (E2)

10.4.2. Relaxation Oscillators

10.5. The Transistor Switch (E1)

10.5.1. Logic Circuits

10.6. D.C. Amplifiers

10.6.1. Directly-Coupled Circuits

10.6.2. Chopper Circuits

10.7. Inverters

Chapter 11. Special Devices, Processes and Uses

11.1. Heterojunctions

11.2. Sonar Amplifier

11.3. Radiation Detection

11.4. Power Control (E1)

11.4.1. The Thyristor (E2)

11.5. Microwave Devices

11.6. Opto-Electronics (E3)

11.6.1. Light Emitting Diodes

11.6.2. The Laser

11.6.3. Optical Transistor

11.6.4. Electroluminescence

11.6.5. The Phototransistor (E4)

11.6.6. Photo-Avalanche Diode

11.6.7. Heterojunctions

11.7. The Unijunction (E5)

11.8. Field Effect Transistors

11.8.1. The Junction Fet

11.8.2. The Insulated Gate Fet or Metal-Oxide-Semiconductor Transistor (MOST)

11.9. Microelectronics (E7)


I. The h-Parameters

II. Relationship Between h and T Parameters for Common Emitter Configuration

III. Input and Output Resistances and Gains for Grounded Emitter Transistor, in Terms of h-Parameters

IV. Classification of Semiconductor Types

V. Practical Precautions with Transistors

VI. Symbols Used in the Text

VII. Impurity Semiconductors



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© Pergamon 1971
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About the Author

J. Jenkins

W. H. Jarvis

About the Editor

W. Ashhurst

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